Boron Arsenide Growth
Boron arsenide (BAs) is an exceptional semiconductor material with remarkable properties and significant technological potential. With an ultra-high thermal conductivity of approximately 1300 W/m·K and a similar lattice structure to other semiconductors, BAs excels at heat dissipation. This makes it invaluable for thermal management in high-power electronics and integrated circuits. High intrinsic electron and hole mobilities (electron: 1,400 cm2/Vs, hole: 2,110 cm2/Vs), positions it as an ideal candidate for next generation semiconductor devices. In our research, we seek to successfully synthesize thin films of BAs for the first time utilizing molecular beam epitaxy. We are currently utilizing both elemental and chemical forms of boron and arsenic to attempt to achieve this goal.
