The Heusler compounds are an exciting class of intermetallics due to their ability to adopt a wide range of tuneable electrical and magnetic properties, including metallicity, half metallic ferromagnetism, superconductivity, and narrow band gap semiconducting behavior with large thermoelectric power factors. Additionally, some of the Half Heuslers are predicted to be topological insulators, making this family a candidate system for creating multifunctional topological heterostructures and exploring the new physics that emerges at their interfaces.
Epitaxy of dissimilar materials.
Growth and characterization of Heusler compounds and III-V heterostructures.
Growth and properties of III-V semiconductor heterostructures and Heusler alloys. Emphasis on potentially topological insulating materals.
Spin injection, transport, and detection in semiconductors. IR detection and low dimensional systems. Spin torque transfer. Fabrication and characterization.
Molecular Beam Epitaxy (MBE) growth of III-V semiconductor heterostructures, low temperature VIS-IR spectroscopy, transmission spectroscopy, Magneto Optic Kerr Effect, Scanning Tunneling Microscopy, spintronics and quantum computing
Fabrication, measurement, and novel growth methods of Heusler alloys, currently focusing on thermoelectric properties of semiconducting thin-films.