SAG mechanism
SAG mechanism

Selective Area Growth

We grow in-plane nanowires as scalable platforms for quantum information processing. With subsequent deposition of a superconductor, this material system can induce topological superconducting phases that host Majorana zero modes. Our group develops the SAG nanowire-superconductor systems to scale up nanowire networks essential for building topological quantum bits towards a scalable quantum computer.

Another application of SAG is to laterally grow III-V epitaxial layers for fabricating novel semiconductor devices such as tunnel field-effect-transistors (Tunnel FETs). To laterally grow epitaxial films, pre-fabricated dielectric templates are used to confine the growth and its direction, also known as Confined Epitaxial Lateral Overgrowth (CELO). This allows a complete control of pre-defined fin thicknesses and building lateral in-plane heterojunctions which can pave the way for fabricating low-power high-on-current Tunnel FETs, virtual substrates for photonic devices as well as III-V on Si integration.

Relevant Publications

Selective-area chemical beam epitaxy of in-plane InAs one-dimensional channels grown on InP(001), InP(111)B, and InP(011) surfaces

Horizontal Heterojunction Integration via Template-Assisted Selective Epitaxy

Affiliated Researchers