Anthony McFadden

Education

• B.S. Electrical Engineering, University of New Mexico, 2009
• B.S. Applied Mathematics, University of New Mexico, 2009
• M.S. Electrical Engineering, UCSB, 2012
• Ph.D. Electrical Engineering, UCSB, 2017

Bio

Tony joined UCSB in Fall, 2010 after receiving B.S. Degrees in electrical engineering and applied math from UNM in Albuquerque, New Mexico. He joined the Palmstrom group in Spring of 2012, received his PhD in electrical engineering in Summer 2017, and was a PostDoc until Summer 2020. Tony’s PhD work was on ferromagnetic and half-metallic Heusler compounds, focusing on Heusler interfaces with oxides and heavy metals in epitaxial systems as well as fully epitaxial magnetic tunnel junctions. He has also worked on low-dimensional III-V semiconductor systems with high spin orbit coupling and their interfaces with superconductors for applications in quantum computing. As a postdoctoral researcher, he worked on developing widely tunable III-AsSb based lasers in the 2.2-2.6 micron range. He also studied different growth techniques for superconductor-semiconductor-superconductor trilayers for superconducting qubits. 

Research

• Microfabrication technology
• Chemical Beam Epitaxy
• MBE
• Electrical device characterization

After the Palmstrom Lab

After finishing his PostDoc in Summer 2020, Tony moved to Boulder, CO with his family to work as a Staff Scientist at NIST. He remains a collaborator with the group as a visiting scientist.