Facilities

Our interconnected Ultra High Vacuum MBE growth and characterization system

Our unique ultrahigh vacuum interconnected deposition and analysis facility allows for the growth of epitaxial metallic compounds and semiconductors by molecular beam epitaxy (MBE) and chemical beam epitaxy (CBE) techniques and characterization in-situ with variable temperature scanning tunneling microscopy (VTSTM), reflection high energy electron diffraction (RHEED), low energy electron diffraction (LEED), Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS). Other analysis techniques such as Rutherford backscattering (RBS), transmission electron microscopy (TEM) and X-ray diffraction are used to study the grown structures.

Materials Growth

  • VG V80H MOLECULAR BEAM EPITAXY(MBE) with E-BEAM EVAPORATORS for GaAs-based semiconductors, Ferromagnetic materials, and rare earth materials
  • Gen II Metals for Heusler Compounds
  • VG V80H CHEMICAL BEAM EPITAXY (under construction) for the growth of III-V semiconductors with carbon-doping and selective area epitaxy
  • VG V80 Metals MBE for Heusler Compounds
  • VG V80 Oxides MBE

Materials Characterization

  • VARIABLE TEMPERATURE - SCANNING TUNNELING MICROSCOPY (STM/AFM)
  • Low Temperature STM
  • Low Temperature AFM/STM in vector-field superconducting magnet for Andreev reflection microscopy
  • X-RAY PHOTOEMISSION SPECTROSCOPY (XPS)
  • AUGER ELECTRON MICROSCOPY (AES)
  • LOW ENERGY ELECTRON DIFFRACTION (LEED)
  • Low Temperature Pholuminescence
  • I-V & C-V MEASUREMENT STATION
  • VARIABLE TEMPERATURE - MAGNETO-OPTIC KERR EFFECT (MOKE) (under construction)
  • Low Temperature HALL MEASUREMENT
  • CRYOSTAT FOR LOW TEMPERATURE MAGNETO-OPTICAL CHARACTERIZATION (under construction)
  • Mechanical polisher for Transmission Electron Microscopy