Our group designs near surface quantum well systems, implements their growth by molecular beam epitaxy, and studies their electronic properties.
Our work focuses on the growth of Heusler compounds by molecular beam epitaxy and characterization of their atomic, electronic, topological, and magnetic properties. These properties can be tuned chemically via the number of valence electrons. Examples include the half-metals Co2MnSi and Co2MnAl, the semiconductors NiTiSn and CoTiSb, the topologically non-trivial PtLuSb and PtLuBi, and Weyl semi-metal candidate Co2TiGe.
Currently there is spatial separation between the inductor and capacitor components of a Josephson junction qubit. To reduce losses and error rates, we are seeking to synthesize novel, high-quality Superconductor/Semiconductor/Superconductor trilayer that can be fabricated into a Merged Element Transmon.
The Palmstrøm Group is researching Rare-Earth based compounds including epitaxial III-V based nanocomposites for thermoelectric and THz applications, the extreme magnetoresistance effect, and epitaxial contacts to III-V materials.
Different superconductor/semiconductor heterostructure can result in the creation of topologically-protected Majorana Zero Modes. We research different materials combinations and geometries in order to aid in the experimental effort to confirm the existence of these quasiparticles which can be used in fault-tolerant quantum computing.
By selective area growth (SAG) technique, we synthesize epitaxial III-V semiconductors on dielectric templates. The semiconductor only grows on the areas lacking dielectric. We grow in-plane and out-of-plane nanowires in varying geometries and materials systems as scalable platforms for quantum information processing.