Their application in the study of mesoscopic phenomena and in quantum information processing has cemented low-dimensional semiconductors at the forefront condensed matter and materials physics research.
Our work focuses on the growth of Heusler compounds by molecular beam epitaxy and characterization of their atomic, electronic, and magnetic properties. Examples include the half metal Co2MnSi, the semiconductors NiTiSn and CoTiSb, the topologically non-trivial PtLuSb, and Weyl semi-metal candidate Co2TiGe.
Our group studies the fundametals of spin transport, including spin injection into semiconductors, spin transport in semiconductors, and spin valve and spin torque related effects in magnetoresistive devices.
By selective area growth (SAG) technique, we selectively grow epitaxial III-V semiconductors on exposed regions of a substrate otherwise covered with a dielectric layer. One application of this technique is to grow in-plane nanowires as scalable platforms for quantum information processing.