Low Dimensional Semiconductors

The semiconductor based implementation of a solid-state quantum information processing system, where typically the spin configuration of one or a few electrons constitutes a qubit, can be realized through the formation of an array of quantum dots using electrostatic gates over a quantum well created in a semiconductor heterostructure. Their application in the study of mesoscopic phenomena and in quantum information processing has cemented low-dimensional semiconductors at the forefront condensed matter and materials physics research. Our group designs near surface quantum well systems, implements their growth by molecular beam epitaxy in our high mobility chamber, and studies their electronic properties and the noise characteristics of quantum devices.

Relevant Publications

Contribution of top barrier materials to high mobility in near-surface InAs quantum wells grown on GaSb(001)

Materials considerations for forming the topological insulator phase in InAs/GaSb heterostructures

Demonstration of gate control of spin splitting in a high-mobility InAs/AlSb two-dimensional electron gas

Affiliated Researchers