2D Materials

hBN

Since graphene’s experimental isolation in 2004, 2D materials have been the subject of extended research. Since that time, a wide range of materials have been found with similar stable layered structures that are tightly bound in-plane, but weakly held together by van der Waals (vdW) bonding out-of-plane. By simply stacking these layered materials, vdW heterostructure devices can be formed without concern over lattice mismatch. Due to their atomically-thin nature, 2D materials are extremely flexible and transparent, making them promising components in next-generation flexible electronics and bio-compatible devices. In the Palmstrøm lab, our research focuses on the epitaxial growth of hexagonal boron nitride, a wide-bandgap semiconducting 2D material that is used as a substrate, gate dielectric, or encapsulation layer in most vdW heterostructures. By improving our understanding of the nucleation and growth of this material on both single-crystal substrates and other 2D materials, a pathway toward wafer-scale hBN-based vdW heterostructures can be achieved.

Researchers

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Professor, ECE and Materials Departments

Epitaxy of dissimilar materials.

Graduate Student Researcher

- MBE growth and characterization of 2D electronic materials for advanced devices, such as hexagonal boron nitride (hBN)