Yilmaz Gul

Education

• Master of Science (MSci) Astrophysics 2011 University College London
• Masters (MSc) in Nanotechnology 2013 University College London
• PhD in Semiconductor Physics 2018 University College London/Toshiba Research Laboratory Cambridge

Bio

Yilmaz Gul completed his PhD in semiconductor physics at University College London with a CASE studentship from Toshiba Research Laboratory Cambridge. His PhD research focused on 1D transport in high mobility InGaAs quantum well structures and later on the properties of 1-dimensional hole gas devices fabricated on p-type Germanium wafers. He is a visiting scientist at University of Cambridge at the Semiconductor Physics group since 2014, working with the Semiconductor Physics Group and the Thin Film Magnetism group. During his visit with the Palmstrøm group he will work on fabricating quantum point contacts on high mobility InAs and InGaAs quantum wells and create superconductor-semiconductor junctions on bulk Ge and Ge quantum well structures. In his spare time, he enjoys running and hiking.

Research

• Properties of strongly interacting electron and hole gases
• Semiconductor-Superconductor hybrid junctions
• 1D transport in group IV p-type semiconductors
• Electron and hole optics through in magnetic fields
• Fractional quantisation in 1D transport