Publications
Displaying 426 - 450 of 552
1997
Rausch, Sigrid, Daniel R Schmidt, Thomas Fromherz, Michael C Wanke, SJ Allen, James P Ibbetson, and Christopher J Palmstrøm. 1997. “Dc And Far Infrared Transport In Eras/Gaas Semi-Metal/Semiconductor Nanocomposites”.
Schmidt, DR, JP Ibbetson, DE Brehmer, Christopher J Palmstrøm, and SJ Allen. 1997. “Giant Magnetoresistance Of Self-Assembled Eras Islands In Gaas”. Mrs Online Proceedings Library Archive 475. Cambridge University Press.
Held, R, SM Seutter, BE Ishaug, A Parhamovsky, AM Dabiran, PI Cohen, Christopher J Palmstrøm, G Nowak, I Grzegory, and S Porowski. 1997. “Submitted To Mrs Fall Meeting”. Boston.
1996
Tanaka, M, Christopher J Palmstrøm, M Tsuda, and T Nishinaga. 1996. “Epitaxial Semimetal (Eras)/Semiconductor (Iii-V) Heterostructures: Negative Differential Resistance In Novel Resonant Tunneling Structures With An Eras Quantum Well”. Journal Of Magnetism And Magnetic Materials 156. Elsevier: 276-278.
Park, Moon-Ho, LC Wang, JY Cheng, F Deng, SS Lau, and Christopher J Palmstrøm. 1996. “Pd/Zn/Pd Ohmic Contact To P-Inp”.
Brehmer, DE, Kai Zhang, Ch J Schwarz, S-P Chau, SJ Allen, JP Ibbetson, JP Zhang, AG Petukhov, Christopher J Palmstrøm, and B Wilkens. 1996. “Resonant Tunneling Through Rare Earth Arsenide, Semimetal Quantum Wells”. Solid-State Electronics 40. Elsevier: 241-244.
Miceli, PF, J Weatherwax, T Krentsel, and Christopher J Palmstrøm. 1996. “Specular And Diffuse Reflectivity From Thin Films Containing Misfit Dislocations”. Physica B: Condensed Matter 221. North-Holland: 230-234.
1995
Palmstrøm, Christopher J. 1995. “Epitaxy Of Dissimilar Materials”. Annual Review Of Materials Science 25. Annual Reviews 4139 El Camino Way, PO Box 10139, Palo Alto, CA 94303-0139, USA: 389-415.
Zhu, JG, Christopher J Palmstrøm, and CB Carter. 1995. “Misfit Dislocations At Eras/Gaas Heterojunctions”. Acta Metallurgica Et Materialia 43. Elsevier: 4171-4177.
Park, Moon-Ho, LC Wang, Fei Deng, A Clawson, SS Lau, JY Cheng, DM Hwang, and Christopher J Palmstrøm. 1995. “Non-Au Based Shallow Low Resistance Ohmic Contacts On P-Inp”.
Bogaerts, R, A de Keyser, F Herlach, FM Peeters, F DeRosa, Christopher J Palmstrøm, D Brehmer, and SJ Allen. 1995. “Quantum Oscillations In The Hall Effect Of Thin Epitaxial Layers Burried In Gaas”.
Zhang, K, DE Brehmer, SJ Allen, and Christopher J Palmstrøm. 1995. “Resonant-Tunneling In Semi-Metal/Semiconductor, Eras/(Al, Ga) As, Heterostructures”. Compound Semiconductors 1994. IOP PUBLISHING LTD TECHNO HOUSE, REDCLIFFE WAY, BRISTOL, ENGLAND BS1 6NX, 845-850.
1994
Song, J-I, KB Chough, Christopher J Palmstrøm, BP van der Gaag, and W-P Hong. 1994. “Carbon-Doped Base Inp/Ingaas Hbts With F/Sub T/= 200 Ghz”.
Hong, W-P, Jong-In Song, Christopher J Palmstrøm, Bart van der Gaag, Kyung-Bae Chough, and JR Hayes. 1994. “Dc, Rf, And Noise Characteristics Of Carbon-Doped Base Inp/Ingaas Heterojunction Bipolar Transistors”. Ieee Transactions On Electron Devices 41. IEEE: 19-25.
Palmstrøm, Christopher J, and Maria C Tamargo. 1994. “Epitaxial Growth Processes”.
Palmstrøm, Christopher J, BP van der Gaag, JI Song, KB Chough, and WP Hong. 1994. “Growth Of Heavy C-Doped Gainas Lattice Matched To Inp By Chemical Beam Epitaxy”.
Palmstrøm, Christopher J, BP van der Gaag, J-I Song, W-P Hong, SA Schwarz, and S Novak. 1994. “Growth Of Heavy Carbon-Doped Gainas Lattice Matched To Inp By Chemical Beam Epitaxy”. Applied Physics Letters 64. American Institute of Physics: 3139-3141.
Song, J-I, W-P Hong, Christopher J Palmstrøm, and KB Chough. 1994. “Inp Based Carbon-Doped Base Hbt Technology: Its Recent Advances And Circuit Applications”.
Song, J-I, W-P Hong, Christopher J Palmstrøm, BP van der Gaag, and KB Chough. 1994. “Millimetre-Wave Inp/Ingaas Heterojunction Bipolar Transistors With A Subpicosecond Extrinsic Delay Time”. Electronics Letters 30. IET: 456-457.
Bogaerts, R, A de Keyser, Fritz Herlach, FM Peeters, F DeRosa, Christopher J Palmstrøm, D Brehmer, and SJ Allen Jr. 1994. “Size Effects In The Transport Properties Of Thin Sc1- Xerxas Epitaxial Layers Buried In Gaas”. Solid-State Electronics 37. Pergamon: 789-792.
Watté, Jan, RE Silverans, H Miinder, Christopher J Palmstrøm, LT Florez, M Van Hove, G Borghs, and K Wuyts. 1994. “The Ge/Pd/N-Gaas Ohmic Contact Interface Studied By Backside Raman Spectroscopy”. Mrs Online Proceedings Library Archive 337. Cambridge University Press.
Song, Jong-In, W-P Hong, Christopher J Palmstrøm, Bart P van der Gaag, and KB Chough. 1994. “Ultra-High-Speed Inp/Ingaas Heterojunction Bipolar Transistors”. Ieee Electron Device Letters 15. IEEE: 94-96.
1993
Song, Jong-In, W-P Hong, Christopher J Palmstrøm, BP van der Gaag, and Kyung Bae Chough. 1993. “A F/Sub T/= 175 Ghz Carbon-Doped Base Inp/Ingaas Hbt”.
Palmstrøm, Christopher J, TD Sands, and LJ Brillson. 1993. “Contacts To Semiconductors”. Noyes Publications, Park Ridge.
Bogaerts, R, A van Esch, L van Bockstal, Fritz Herlach, FM Peeters, F DeRosa, Christopher J Palmstrøm, and SJ Allen Jr. 1993. “Experimental Study Of The Energy Band Structure Of Sc1- Xerxas Layers In Pulsed Magnetic Fields”. Physica B: Condensed Matter 184. North-Holland: 232-235.
