Publications

Found 84 results
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2013
Kawasaki JK, Neulinger T, Timm R, Hjort M, Zakharov AA, Mikkelsen A, Schultz BD, Palmstrom CJ.  2013.  Epitaxial growth and surface studies of the Half Heusler compound NiTiSn (001). Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 31:04D106.
Koltun R, Hall JL, Mates TE, Bowers JE, Schultz BD, Palmstrom CJ.  2013.  Thermoelectric properties of single crystal Sc[sub 1 - x]Er[sub x]As:InGaAs nanocomposites. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 31:041401.
2008
LeBeau JM, Hu QO, Palmstrom CJ, Stemmer S.  2008.  Atomic structure of postgrowth annealed epitaxial Fe/(001) GaAs interfaces. Applied Physics Letters. 93
Rodwell M., Wistey M., Singisetti U., Burek G., Gossard A., Stemmer S., Engel-Herbert R., Hwang Y., Zheng Y., Van de Walle C. et al..  2008.  Technology development & design for 22 nm InGaAs/InP-channel MOSFETs. 2008 IEEE 20th International Conference on Indium Phosphide & Related Materials (IPRM). :6pp.-6pp..
Rodwell M., Wistey M., Singisetti U., Burek G., Gossard A., Stemmer S., Engel-Herbert R., Hwang Y., Zheng Y., Van de Walle C. et al..  2008.  Technology development & design for 22 nm InGaAs/InP-channel MOSFETs. 2008 IEEE 20th International Conference on Indium Phosphide & Related Materials (IPRM). :6pp.-6pp..

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