Publications
Found 56 results
Author Title Type [ Year
Filters: First Letter Of Last Name is A [Clear All Filters]
Epitaxial Heusler superlattice Co2MnAl/Fe2MnAl with perpendicular magnetic anisotropy and termination-dependent half-metallicity. Phys Rev Materials. 2, 034402
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2018. Fourfold symmetric anisotropic magnetoresistance in half-metallic Co2MnSi Heusler alloy thin films. Jpn. J. Appl. Phys.. 57
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2018. Growth, electrical, structural, and magnetic properties of half-Heusler CoTi1−x Fex Sb. Phys Rev Materials. 2
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2018. Low magnetic damping and large negative anisotropic magnetoresistance in halfmetallic Co2-xMn1+xSi Heusler alloy films grown by molecular beam epitaxy. Appl. Phys. Lett.. 112, 262407(https://doi.org/10.1063/1.5030341)
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2018. Transparent Semiconductor-Superconductor Interface and Induced Gap in an Epitaxial Heterostructure Josephson Junction. Physical Review Applied. 7, 034029
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2017. Quantized conductance doubling and hard gap in a two-dimensional semiconductor-superconductor heterostructure. Nature Communications. 7:12841
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2016. Surface and electronic structure of epitaxial PtLuSb (001) thin films. Applied Physics Letters. 104:-.
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2014. Engineering shallow spins in diamond with nitrogen delta-doping. Applied Physics Letters. 101
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2012. III-V MOSFETs: scaling laws, scaling limits, fabrication processes. 2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM 2010). :6pp.-6pp..
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2010. Mechanical Construction of Semiconductor Band Gaps. Ieee Journal of Quantum Electronics. 46:1261-1267.
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2010. Coupling of quantum states with mechanical heterostructures. 15th International Conference on Solid-State Sensors, Actuators and Microsystems. Transducers 2009. :489-92.
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2009. Spin injection across the Fe/GaAs interface: Role of interfacial ordering. Physical Review B. 80
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2009. Dielectric properties of InAsP alloy thin films and evaluation of direct- and reciprocal-space methods of determining critical-point parameters. Physica Status Solidi a-Applications and Materials Science. 205:884-887.
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2008. Phase formation in the thin film Fe/GaAs system. Applied Physics Letters. 92:091914-1-3.
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2008. Phase formation in the thin film Fe/GaAs system. Applied Physics Letters. 92
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2008. Technology development & design for 22 nm InGaAs/InP-channel MOSFETs. 2008 IEEE 20th International Conference on Indium Phosphide & Related Materials (IPRM). :6pp.-6pp..
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2008. Technology development & design for 22 nm InGaAs/InP-channel MOSFETs. 2008 IEEE 20th International Conference on Indium Phosphide & Related Materials (IPRM). :6pp.-6pp..
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2008. Dielectric functions and electronic structure of InAsxP1-x films on InP. Applied Physics Letters. 91
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2007. Electrical detection of spin transport in lateral ferromagnet-semiconductor devices. Nature Physics. 3:197-202.
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2007. Optical and electrical spin injection and spin transport in hybrid Fe/GaAs devices. Journal of Applied Physics. 101
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2007. Suppression of nuclear polarization near the surface of optically pumped GaAs. Physical Review B. 76
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2007. Electrical detection of spin accumulation at a ferromagnet-semiconductor interface. Physical Review Letters. 96
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2006. Epitaxial growth and characterization of single crystal ferromagnetic shape memory Co2NiGa films. Ferroelectrics. 342:35-+.
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2006. Growth of a-plane ZnO thin films on r-plane sapphire by plasma-assisted MBE. Progress in Semiconductor Materials V-Novel Materials and Electronic and Optoelectronic Applications (Materials Research Society Symposium Proceedings Vol.891). :407-12.
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2006. Spin injection from perpendicular magnetized ferromagnetic delta-MnGa into (Al,Ga)As heterostructures. Applied Physics Letters. 89
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2006.