Publications

Found 15 results
Author Title [ Type(Asc)] Year
Filters: Author is Zhu, J. G.  [Clear All Filters]
Journal Article
Zhu J.G, Palmstrom C.J, Carter C.B.  1995.  STUDY OF MOLECULAR-BEAM EPITACTIC GROWTH OF GAAS ON (100) SC(X)E(1-X)AS/GAAS. Journal of Applied Physics. 77:4312-4320.
Palmstrom C.J, Cheeks T.L, Nahory R.E, Wilkens B.J, Martinez J.A, Miceli P.F, Keramidas V.G, Zhu J.G, Carter C.B.  1990.  STRUCTURAL AND ELECTRICAL-PROPERTIES OF INSITU FABRICATED EPITAXIAL THERMODYNAMICALLY STABLE SEMIMETALLIC COMPOUNDS ON MBE-GROWN GAAS. Journal of Electronic Materials. 19:39-40.
Zhu J.G, Palmstrom C.J, Carter C.B.  1990.  PHASE BOUNDARIES BETWEEN GAAS AND OTHER CUBIC MATERIALS. Institute of Physics Conference Series. :411-414.
Zhu J.G, Palmstrom C.J, Carter C.B.  1990.  Phase boundaries between GaAs and other cubic materials. EMAG-MICRO 89. Proceedings of the Institute of Physics Electron Microscopy and Analysis Group and Royal Microscopical Society Conference. :411-14vol.1.
Zhu J.G, Palmstrom C.J, Garrison K.C, Carter C.B.  1989.  MISFIT DISLOCATIONS AT THE COGA/GAAS INTERFACE. Institute of Physics Conference Series. :659-664.
Zhu J.G, Palmstrom C.J, Garrison K.C, Carter C.B.  1989.  Misfit dislocations at the CoGa/GaAs interface. Microscopy of Semiconducting Materials 1989. Proceedings of the Royal Microscopical Society Conference. :659-64.
Zhu J.G, Palmstrom C.J, Carter C.B.  1995.  MISFIT DISLOCATIONS AT ERAS/GAAS HETEROJUNCTIONS. Acta Metallurgica Et Materialia. 43:4171-4177.
Zhu J.G, Carter C.B, Palmstrom C.J, Mounier S..  1990.  MICROSTRUCTURE OF EPITACTICALLY GROWN GAAS/ERAS/GAAS. Applied Physics Letters. 56:1323-1325.
Zhu J.G, Palmstrom C.J, Carter C.B.  1995.  LATTICE-MATCHED GAAS/SC0.3ER0.7AS/GAAS HETEROSTRUCTURES GROWN ON VARIOUS SUBSTRATE ORIENTATIONS. Journal of Applied Physics. 77:4321-4328.
Finstad T.G, Palmstrom C.J, Mounier S., Keramidas V.G, Zhu J.G, Carter C.B.  1991.  Initial stages of GaAs growth on Sc 1-xEr xAs surfaces. Evolution of Thin-Film and Surface Microstructure Symposium. :413-18.
Zhu J.G, McKernan S., Palmstrom C.J, C. Carter B.  1990.  High-resolution imaging of CoGa/GaAs and ErAs/GaAs interfaces. Atomic Scale Structure of Interfaces Symposium. :89-94.
Zhu J.G, Palmstrom C.J, Carter C.B.  1991.  THE GROWTH OF GAAS ON SC0.3ER0.7AS EPILAYERS. Institute of Physics Conference Series. :419-422.
Palmstrom C.J, Sands T., Harbison J.P, Finstad T.G, Mounier S., Florez L.T, Keramidas V.G, Zhu J.G, Carter C.B.  1990.  Growth of buried metal aluminides and gallides and of rare-earth monopnictides in compound semiconductors: a comparison. Proceedings of the SPIE - The International Society for Optical Engineering. 1285:85-94.
Palmstrom C.J, Cheeks T.L, Gilchrist H.L, Zhu J.G, Carter C.B, Wilkens B.J, Martin R..  1992.  EFFECT OF ORIENTATION ON THE SCHOTTKY-BARRIER HEIGHT OF THERMODYNAMICALLY STABLE EPITAXIAL METAL GAAS STRUCTURES. Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films. 10:1946-1952.
Zhu J.G, Carter C.B, Palmstrom C.J, Garrison K.C.  1989.  CHARACTERIZATION OF THE COGA/GAAS INTERFACE. Applied Physics Letters. 55:39-41.