Publications

Found 19 results
Author Title [ Type(Asc)] Year
Filters: Author is Harbison, J. P.  [Clear All Filters]
Journal Article
Sands T., Harbison J.P, Palmstrom C.J, Ramesh R., Keramidas V.G.  1991.  A template approach to metal/III-V semiconductor epitaxy. Heteroepitaxy of Dissimilar Materials Symposium. :271-82.
Palmstrom C.J, Chase E.W, Hwang D.M, Harbison J.P, Chang C.C, Kaplan A.S, Nazar L..  1988.  STUDIES OF CO/GA1-XALXAS INTERFACES FABRICATED IN ULTRAHIGH-VACUUM. Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films. 6:1456-1461.
Sands T., Harbison J.P, Schwarz S.A, Palmstrom C.J, Tabatabaie N., Chan W.K, Keramidas V.G.  1988.  STRUCTURE AND STABILITY OF ULTRATHIN NIAL FILMS IN (AL,GA)AS/NIAL/(AL,GA)AS HETEROSTRUCTURES. Journal of Electronic Materials. 17:S23-S23.
Sands T., Palmstrom C.J, Harbison J.P, Keramidas V.G, Tabatabaie N., Cheeks T.L, Ramesh R., Silberberg Y..  1990.  Stable and epitaxial metal/III-V semiconductor heterostructures. Material Science Reports. 5:99-170.
Chen W., Kahn A., Mangat P.S, Soukiassian P., Florez L.T, Harbison J.P, Palmstrom C.J.  1993.  PB/GAAS(100) - BAND BENDING, ADATOM-INDUCED GAP STATES AND SURFACE DIPOLE. Journal of Vacuum Science & Technology B. 11:1571-1574.
Marshall E.D, Lau S.S, Palmstrom C.J, Sands T., Schwartz C.L, Schwarz S.A, Harbison J.P, Florez L.T.  1989.  Ohmic contact formation mechanism in the Ge/Pd/n-GaAs system. Chemistry and defects in semiconductor heterostructures Symposium. :163-8.
Han C.C, Wang X.Z, Wang L.C, Marshall E.D, Lau S.S, Schwarz S.A, Palmstrom C.J, Harbison J.P, Florez L.T, Potemski R.M et al..  1990.  NONSPIKING OHMIC CONTACT TO P-GAAS BY SOLID-PHASE REGROWTH. Journal of Applied Physics. 68:5714-5718.
Harbison J.P, Sands T., Palmstrom C.J, Cheeks T.L, Florez L.T, Keramidas V.G.  1992.  New directions for III-V structures: metal/semiconductor heteroepitaxy. Gallium Arsenide and Related Compounds 1991. Proceedings of the Eighteenth International Symposium. :1-8.
Harbison J.P, Sands T., Palmstrom C.J, Cheeks T.L, Florez L.T, Keramidas V.G.  1992.  NEW DIRECTIONS FOR III-V STRUCTURES - METAL-SEMICONDUCTOR HETEROEPITAXY. Institute of Physics Conference Series. :1-8.
Allen S.J, Derosa F., Gilchrist H.L, Harbison J.P, Leadbeater M., Miceli P.F, Palmstrom C.J, Ramesh R., Sands T., Zrenner A..  1991.  MAGNETOTRANSPORT IN MAGNETIC EPITAXIAL METAL LAYERS BURIED IN (GA,AL)AS HETEROSTRUCTURES. Journal of Applied Physics. 69:6117-6117.
Sands T., Harbison J.P, Ramesh R., Palmstrom C.J, Florez L.T, Keramidas V.G.  1990.  INTERFACE CRYSTALLOGRAPHY AND STABILITY IN EPITAXIAL METAL (NIAL, COAL)/III-V SEMICONDUCTOR HETEROSTRUCTURES. Materials Science and Engineering B-Solid State Materials for Advanced Technology. 6:147-157.
Palmstrom C.J, Garrison K., Fimland B.O, Harbison J.P, Sands T., Chase E.W, Florez L..  1988.  INSITU FABRICATED METAL ALLOY CONTACTS TO GA1-XALXAS (X=0-1) - A TEST OF MODELS FOR SCHOTTKY-BARRIER FORMATION. Journal of Electronic Materials. 17:S24-S25.
Palmstrom C.J, Schwarz S.A, Marshall E.D, Yablonovitch E., Harbison J.P, Schwartz C.L, Florez L., Gmitter T.J, Wang L.C, Lau S.S.  1988.  A high depth resolution backside secondary ion mass spectrometry technique used for studying metal/GaAs contacts. Advanced Surface Processes for Optoelectronics: Symposium. :283-8.
Palmstrom C.J, Sands T., Harbison J.P, Finstad T.G, Mounier S., Florez L.T, Keramidas V.G, Zhu J.G, Carter C.B.  1990.  Growth of buried metal aluminides and gallides and of rare-earth monopnictides in compound semiconductors: a comparison. Proceedings of the SPIE - The International Society for Optical Engineering. 1285:85-94.
Palmstrom C.J, Schwarz S.A, Yablonovitch E., Harbison J.P, Schwartz C.L, Florez L.T, Gmitter T.J, Marshall E.D, Lau S.S.  1990.  GE REDISTRIBUTION IN SOLID-PHASE GE/PD/GAAS OHMIC CONTACT FORMATION. Journal of Applied Physics. 67:334-339.
Sands T., Harbison J.P, Chan W.K, Schwarz S.A, Chang C.C, Palmstrom C.J, Keramidas V.G.  1988.  EPITAXIAL-GROWTH OF GAAS/NIAL/GAAS HETEROSTRUCTURES. Applied Physics Letters. 52:1216-1218.
Cheeks T.L, Sands T., Nahory R.E, Harbison J.P, Palmstrom C.J, Gilchrist H.L, Ramesh R., Keramidas V.G.  1990.  EPITAXIAL METAL-III-V SEMICONDUCTOR DOUBLE HETEROSTRUCTURE SCHOTTKY DIODES - CHARACTERIZATION AND NOVEL DEVICE POTENTIAL. Journal of Electronic Materials. 19:40-40.
Palmstrom C.J, Chase E.W, Harbison J.P, Chang C.C, Kaplan A.S, Hwang D.M.  1987.  CO CONTACTS TO GAAS AND GA1-XALXAS - REACTIONS AND ELECTRICAL-PROPERTIES. Journal of the Electrochemical Society. 134:C116-C117.
Schwarz S.A, Palmstrom C.J, Schwartz C.L, Sands T., Shantharama L.G, Harbison J.P, Florez L.T, Marshall E.D, Han C.C, Lau S.S et al..  1990.  BACKSIDE SECONDARY ION MASS-SPECTROMETRY INVESTIGATION OF OHMIC AND SCHOTTKY CONTACTS ON GAAS. Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films. 8:2079-2083.