Found 8 results
Author Title [ Type(Desc)] Year
Filters: Author is Palmstrom, C.  [Clear All Filters]
Journal Article
Stanley C.R, Welch D., Wicks G.W, Wood C.EC, Palmstrom C., Pollack F.H, Parayanthal P..  1983.  (Al xGa 1-x) 0.47In 0.53As; growth and characterization. Gallium Arsenide and Related Compounds, 1982. Tenth International Symposium on Gallium Arsenide and Related Compounds. :173-80.
Stanley C.R, Welch D., Wicks G.W, Wood C.EC, Palmstrom C., Pollack F.H, Parayanthal P..  1983.  (ALXGA1-X)0.47IN0.53AS - GROWTH AND CHARACTERIZATION. Institute of Physics Conference Series. :173-180.
Fowler D.E, Gyulai J., Palmstrom C..  1983.  ELECTRON INELASTIC MEAN FREE-PATH (IMFP) IN SINGLE-CRYSTAL BEO BY RUTHERFORD BACKSCATTERING (RBS) AND AUGER-ELECTRON SPECTROSCOPY (AES). Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films. 1:1021-1025.
Palmstrom C..  2003.  Epitaxial Heusler alloys: New materials for semiconductor spintronics. Mrs Bulletin. 28:725-728.
Rodwell M.JW, Singisetti U., Wistey M., Burek G.J, Carter A., Baraskar A., Law J., Thibeault B.J, Ji KEun, Shin B. et al..  2010.  III-V MOSFETs: scaling laws, scaling limits, fabrication processes. 2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM 2010). :6pp.-6pp..
Lam W.K, Tan Y.T, Palmstrom C., Mayer J.W.  1985.  RUTHERFORD BACKSCATTERING DETERMINATION OF IODIDE DISTRIBUTION IN AG(BR,I) SHEET CRYSTAL. Journal of Photographic Science. 33:219-220.
Palmstrom C..  2006.  Spintronics. IEEE Signal Processing Magazine. 23:94-6.
Rodwell M., Wistey M., Singisetti U., Burek G., Gossard A., Stemmer S., Engel-Herbert R., Hwang Y., Zheng Y., Van de Walle C. et al..  2008.  Technology development & design for 22 nm InGaAs/InP-channel MOSFETs. 2008 IEEE 20th International Conference on Indium Phosphide & Related Materials (IPRM). :6pp.-6pp..