Publications

Found 34 results
Author Title [ Type(Desc)] Year
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Journal Article
Allen S.J, Derosa F., Palmstrom C.J, Zrenner A..  1991.  BAND-STRUCTURE, QUANTUM CONFINEMENT, AND EXCHANGE SPLITTING IN SC1-XERXAS EPITAXIAL LAYERS BURIED IN GAAS. Physical Review B. 43:9599-9609.
Zhu J.G, Carter C.B, Palmstrom C.J, Garrison K.C.  1989.  CHARACTERIZATION OF THE COGA/GAAS INTERFACE. Applied Physics Letters. 55:39-41.
Palmstrom C.J, Cheeks T.L, Gilchrist H.L, Zhu J.G, Carter C.B, Wilkens B.J, Martin R..  1992.  EFFECT OF ORIENTATION ON THE SCHOTTKY-BARRIER HEIGHT OF THERMODYNAMICALLY STABLE EPITAXIAL METAL GAAS STRUCTURES. Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films. 10:1946-1952.
Lou X, Adelmann C, Crooker SA, Garlid ES, Zhang J, Reddy K.SMadhuka, Flexner SD, Palmstrom CJ, Crowell PA.  2007.  Electrical detection of spin transport in lateral ferromagnet-semiconductor devices. Nature Physics. 3:197-202.
Kawasaki JK, Neulinger T, Timm R, Hjort M, Zakharov AA, Mikkelsen A, Schultz BD, Palmstrom CJ.  2013.  Epitaxial growth and surface studies of the Half Heusler compound NiTiSn (001). Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 31:04D106.
Gazibegovic S., Car D., Zhang H., Balk S.C., Logan J.A., de Moor M.W.A., Cassidy M.C., Schmits R., Xu D., Wang G.Z. et al..  2017.  Epitaxy of advanced nanowire quantum devices. Nature. 548, 434
Gazibegovic S., Car D., Zhang H., Balk S.C., Logan J.A., de Moor M.W.A., Cassidy M.C., Schmits R., Xu D., Wang G.Z. et al..  2017.  Epitaxy of advanced nanowire quantum devices. Nature. 548, 434
Cassels LE, Buehl TE, Burke PG, Palmstrom CJ, Gossard AC, Pernot G, Shakouri A, Haughn CR, Doty MF, Zide JMO.  2011.  Growth and characterization of TbAs:GaAs nanocomposites. Journal of Vacuum Science & Technology B. 29
Palmstrom C.J, Sands T., Harbison J.P, Finstad T.G, Mounier S., Florez L.T, Keramidas V.G, Zhu J.G, Carter C.B.  1990.  Growth of buried metal aluminides and gallides and of rare-earth monopnictides in compound semiconductors: a comparison. Proceedings of the SPIE - The International Society for Optical Engineering. 1285:85-94.
Zhu J.G, Palmstrom C.J, Carter C.B.  1991.  THE GROWTH OF GAAS ON SC0.3ER0.7AS EPILAYERS. Institute of Physics Conference Series. :419-422.
Zhu J.G, McKernan S., Palmstrom C.J, C. Carter B.  1990.  High-resolution imaging of CoGa/GaAs and ErAs/GaAs interfaces. Atomic Scale Structure of Interfaces Symposium. :89-94.
Chan M.K, Hu Q.O, Zhang J., Kondo T., Palmstrom C.J, Crowell P.A.  2009.  Hyperfine interactions and spin transport in ferromagnet-semiconductor heterostructures. Physical Review B. 80
Finstad T.G, Palmstrom C.J, Mounier S., Keramidas V.G, Zhu J.G, Carter C.B.  1991.  Initial stages of GaAs growth on Sc 1-xEr xAs surfaces. Evolution of Thin-Film and Surface Microstructure Symposium. :413-18.
Zhu J.G, Palmstrom C.J, Carter C.B.  1995.  LATTICE-MATCHED GAAS/SC0.3ER0.7AS/GAAS HETEROSTRUCTURES GROWN ON VARIOUS SUBSTRATE ORIENTATIONS. Journal of Applied Physics. 77:4321-4328.
Allen S.J, Derosa F., Gilchrist H.L, Harbison J.P, Leadbeater M., Miceli P.F, Palmstrom C.J, Ramesh R., Sands T., Zrenner A..  1991.  MAGNETOTRANSPORT IN MAGNETIC EPITAXIAL METAL LAYERS BURIED IN (GA,AL)AS HETEROSTRUCTURES. Journal of Applied Physics. 69:6117-6117.
Zhu J.G, Carter C.B, Palmstrom C.J, Mounier S..  1990.  MICROSTRUCTURE OF EPITACTICALLY GROWN GAAS/ERAS/GAAS. Applied Physics Letters. 56:1323-1325.
Zhu J.G, Palmstrom C.J, Carter C.B.  1995.  MISFIT DISLOCATIONS AT ERAS/GAAS HETEROJUNCTIONS. Acta Metallurgica Et Materialia. 43:4171-4177.
Zhu J.G, Palmstrom C.J, Garrison K.C, Carter C.B.  1989.  MISFIT DISLOCATIONS AT THE COGA/GAAS INTERFACE. Institute of Physics Conference Series. :659-664.
Zhu J.G, Palmstrom C.J, Garrison K.C, Carter C.B.  1989.  Misfit dislocations at the CoGa/GaAs interface. Microscopy of Semiconducting Materials 1989. Proceedings of the Royal Microscopical Society Conference. :659-64.
Zhu J.G, Palmstrom C.J, Carter C.B.  1990.  PHASE BOUNDARIES BETWEEN GAAS AND OTHER CUBIC MATERIALS. Institute of Physics Conference Series. :411-414.
Zhu J.G, Palmstrom C.J, Carter C.B.  1990.  Phase boundaries between GaAs and other cubic materials. EMAG-MICRO 89. Proceedings of the Institute of Physics Electron Microscopy and Analysis Group and Royal Microscopical Society Conference. :411-14vol.1.
Megrant A., Neill C., Barends R., Chiaro B., Chen Y, Feigl L., Kelly J., Lucero E, Mariantoni M, O'Malley P.JJ et al..  2012.  Planar superconducting resonators with internal quality factors above one million. Applied Physics Letters. 100
Zhang H., Liu C-X, Gazibegovic S., Xu D., Logan J.A., Wang G., van Loo N., Bommer J.D.S., de Moor M.W.A., Car D. et al..  2018.  Quantized Majorana conductance. Nature. doi:10.1038/nature26142
Brehmer D.E, Ibbetson J.P, Kai Z, Petukhov A.G, Schwarz C.J, Chau S.P, Allen S.J, Palmstrom C.J, Zhang J.P, Wilkens B..  1995.  Resonant tunneling through (Al,Ga)As/ErAs/(Al,Ga)As, semi-metal quantum wells. Semiconductor Heteroepitaxy. Growth, Characterization and Device Applications. :672-5.

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