Publications

Found 21 results
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Journal Article
Palmstrom C.J, Chang C.C, Yu A., Galvin G.J, Mayer J.W.  1987.  CO/GAAS INTERFACIAL REACTIONS. Journal of Applied Physics. 62:3755-3762.
Duszak R., Palmstrom C.J, Florez L.T, Yang Y.N, Weaver J.H.  1992.  DRAMATIC WORK FUNCTION VARIATIONS OF MOLECULAR-BEAM EPITAXIALLY GROWN GAAS(100) SURFACES. Journal of Vacuum Science & Technology B. 10:1891-1897.
Yang Y.N, Luo Y.S, Weaver J.H, Florez L.T, Palmstrom C.J.  1992.  EFFECTS OF ANNEALING ON THE SURFACE-MORPHOLOGY OF DECAPPED GAAS(001). Applied Physics Letters. 61:1930-1932.
Yamada I., Palmstrom C.J, Kennedy E., Mayer J.W, Inokawa H., Takagi T..  1985.  Epitaxy of aluminium films on semiconductors by ionized cluster beam. Layered Structures, Epitaxy, and Interfaces Symposium. :401-6.
Yoneda J., Otsuka T., Nakajima T., Takakura T., Obata T., Pioro-Ladrière M., Lu H., Palmstrøm C.J, Gossard A.C, Tarucha S..  2014.  Fast electrical control of single electron spins in quantum dots with vanishing influence from nuclear spins. Phys. Rev. Lett. 113, 267601 (2014).
Yu C, Pechan MJ, Srivastava S, Palmstrom CJ, Biegaslski M, Brooks C, Schlom D.  2008.  Ferromagnetic resonance in ferromagnetic/ferroelectric Fe/BaTiO(3)/SrTiO(3)(001). Journal of Applied Physics. 103
Yu C.T, Pechan M.J, Carr D., Palmstrom C.J.  2006.  Ferromagnetic resonance in the stripe domain state: A study in Co2MnGa (001). Journal of Applied Physics. 99
Palmstrom C.J, Schwarz S.A, Yablonovitch E., Harbison J.P, Schwartz C.L, Florez L.T, Gmitter T.J, Marshall E.D, Lau S.S.  1990.  GE REDISTRIBUTION IN SOLID-PHASE GE/PD/GAAS OHMIC CONTACT FORMATION. Journal of Applied Physics. 67:334-339.
Palmstrom C.J, Schwarz S.A, Marshall E.D, Yablonovitch E., Harbison J.P, Schwartz C.L, Florez L., Gmitter T.J, Wang L.C, Lau S.S.  1988.  A high depth resolution backside secondary ion mass spectrometry technique used for studying metal/GaAs contacts. Advanced Surface Processes for Optoelectronics: Symposium. :283-8.
Duan C.G, Komesu T., Jeong H.K, Borca C.N, Yin W.G, Liu J., Mei W.N, Dowben P.A, Petukhov A.G, Schultz B.D et al..  2004.  Hybridization between 4f-5d states in ErAs(100). Surface Review and Letters. 11:531-539.
Rodwell M.JW, Singisetti U., Wistey M., Burek G.J, Carter A., Baraskar A., Law J., Thibeault B.J, Ji KEun, Shin B. et al..  2010.  III-V MOSFETs: scaling laws, scaling limits, fabrication processes. 2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM 2010). :6pp.-6pp..
Young A.J, Schultz B.D, Palmstrøm C.J.  2014.  Lattice distortion in single crystal rare-earth arsenide/GaAs nanocomposites. Applied Physics Letters. 104:-.
Luo Y.S, Yang Y.N, Weaver J.H, Florez L.T, Palmstrom C.J.  1994.  MULTIORIENTATIONAL GROWTH OF AL ON GAAS(001) STUDIED WITH SCANNING-TUNNELING-MICROSCOPY. Physical Review B. 49:1893-1899.
Yu A.J, Galvin G.J, Palmstrom C.J, Mayer J.W.  1985.  PHASE FORMATION AND REACTION-KINETICS IN THE THIN-FILM CO/GAAS SYSTEM. Applied Physics Letters. 47:934-936.
Jeong H.K, Komesu T., Yang C.S, Dowben P.A, Schultz B.D, Palmstrom C.J.  2004.  Photoemission forward scattering from ErAs(100)/GaAs(100). Materials Letters. 58:2993-2996.
Megrant A., Neill C., Barends R., Chiaro B., Chen Y, Feigl L., Kelly J., Lucero E, Mariantoni M, O'Malley P.JJ et al..  2012.  Planar superconducting resonators with internal quality factors above one million. Applied Physics Letters. 100
Pechan M.J, Yu C.T, Carr D., Palmstrom C.J.  2005.  Remarkable strain-induced magnetic anisotropy in epitaxial Co2MnGa (001) films. Journal of Magnetism and Magnetic Materials. 286:340-345.
Yoneda J., Otsuka T., Takakura T., Pioro-Ladrière M., Brunner R., Lu H., Nakajima T., Obata T., Palmstrøm C.J, Gossard A.C et al..  2015.  Robust micro-magnet design for fast electrical manipulations of single spins in quantum dots. Applied Physics Express. 8, 084401
Ohya S, Chiaro B, Megrant A, Neill C, Barends R, Chen Y, Kelly J, Low D, Mutus J, O’Malley PJJ et al..  2014.  Room temperature deposition of sputtered TiN films for superconducting coplanar waveguide resonators. Superconductor Science and Technology. 27:015009.
Rodwell M., Wistey M., Singisetti U., Burek G., Gossard A., Stemmer S., Engel-Herbert R., Hwang Y., Zheng Y., Van de Walle C. et al..  2008.  Technology development & design for 22 nm InGaAs/InP-channel MOSFETs. 2008 IEEE 20th International Conference on Indium Phosphide & Related Materials (IPRM). :6pp.-6pp..
Rodwell M., Wistey M., Singisetti U., Burek G., Gossard A., Stemmer S., Engel-Herbert R., Hwang Y., Zheng Y., Van de Walle C. et al..  2008.  Technology development & design for 22 nm InGaAs/InP-channel MOSFETs. 2008 IEEE 20th International Conference on Indium Phosphide & Related Materials (IPRM). :6pp.-6pp..