Publications

Found 52 results
Author Title [ Type(Desc)] Year
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Journal Article
Stanley C.R, Welch D., Wicks G.W, Wood C.EC, Palmstrom C., Pollack F.H, Parayanthal P..  1983.  (Al xGa 1-x) 0.47In 0.53As; growth and characterization. Gallium Arsenide and Related Compounds, 1982. Tenth International Symposium on Gallium Arsenide and Related Compounds. :173-80.
Stanley C.R, Welch D., Wicks G.W, Wood C.EC, Palmstrom C., Pollack F.H, Parayanthal P..  1983.  (Al xGa 1-x) 0.47In 0.53As; growth and characterization. Gallium Arsenide and Related Compounds, 1982. Tenth International Symposium on Gallium Arsenide and Related Compounds. :173-80.
Stanley C.R, Welch D., Wicks G.W, Wood C.EC, Palmstrom C., Pollack F.H, Parayanthal P..  1983.  (Al xGa 1-x) 0.47In 0.53As; growth and characterization. Gallium Arsenide and Related Compounds, 1982. Tenth International Symposium on Gallium Arsenide and Related Compounds. :173-80.
Stanley C.R, Welch D., Wicks G.W, Wood C.EC, Palmstrom C., Pollack F.H, Parayanthal P..  1983.  (ALXGA1-X)0.47IN0.53AS - GROWTH AND CHARACTERIZATION. Institute of Physics Conference Series. :173-180.
Stanley C.R, Welch D., Wicks G.W, Wood C.EC, Palmstrom C., Pollack F.H, Parayanthal P..  1983.  (ALXGA1-X)0.47IN0.53AS - GROWTH AND CHARACTERIZATION. Institute of Physics Conference Series. :173-180.
Stanley C.R, Welch D., Wicks G.W, Wood C.EC, Palmstrom C., Pollack F.H, Parayanthal P..  1983.  (ALXGA1-X)0.47IN0.53AS - GROWTH AND CHARACTERIZATION. Institute of Physics Conference Series. :173-180.
Wuyts K., Watte J., Silverans R.E, Vanhove M., Borghs G., Palmstrom C.J, Florez L.T, Munder H..  1994.  BACK SIDE RAMAN MEASUREMENTS ON GE/PD/N-GAAS OHMIC CONTACT STRUCTURES. Applied Physics Letters. 64:2406-2408.
Wuyts K., Watte J., Silverans R.E, Vanhove M., Borghs G., Palmstrom C.J, Florez L.T, Munder H..  1994.  BACK SIDE RAMAN MEASUREMENTS ON GE/PD/N-GAAS OHMIC CONTACT STRUCTURES. Applied Physics Letters. 64:2406-2408.
Schwarz S.A, Palmstrom C.J, Bhat R., Koza M., Wang L.C, Park M.H.  1995.  Backside SIMS study of Ge/Pd non-alloyed ohmic contacts on InGaAs. Beam-Solid Interactions for Materials Synthesis and Characterization. Symposium. :471-6.
Duszak R., Palmstrom C.J, Florez L.T, Yang Y.N, Weaver J.H.  1992.  DRAMATIC WORK FUNCTION VARIATIONS OF MOLECULAR-BEAM EPITAXIALLY GROWN GAAS(100) SURFACES. Journal of Vacuum Science & Technology B. 10:1891-1897.
Palmstrom C.J, Cheeks T.L, Gilchrist H.L, Zhu J.G, Carter C.B, Wilkens B.J, Martin R..  1992.  EFFECT OF ORIENTATION ON THE SCHOTTKY-BARRIER HEIGHT OF THERMODYNAMICALLY STABLE EPITAXIAL METAL GAAS STRUCTURES. Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films. 10:1946-1952.
Yang Y.N, Luo Y.S, Weaver J.H, Florez L.T, Palmstrom C.J.  1992.  EFFECTS OF ANNEALING ON THE SURFACE-MORPHOLOGY OF DECAPPED GAAS(001). Applied Physics Letters. 61:1930-1932.
Adelmann C., Xie J.Q, Palmstrom C.J, Strand J., Lou X., Wang J., Crowell P.A.  2005.  Effects of doping profile and post-growth annealing on spin injection from Fe into (AI,Ga)As heterostructures. Journal of Vacuum Science & Technology B. 23:1747-1751.
Gazibegovic S., Car D., Zhang H., Balk S.C., Logan J.A., de Moor M.W.A., Cassidy M.C., Schmits R., Xu D., Wang G.Z. et al..  2017.  Epitaxy of advanced nanowire quantum devices. Nature. 548, 434
Wang L.C, Park M.H, Deng F., Clawson A., Lau S.S, Hwang D.M, Palmstrom C.J.  1995.  GE/PD (ZN) OHMIC CONTACT SCHEME ON P-INP BASED ON THE SOLID-PHASE REGROWTH PRINCIPLE. Applied Physics Letters. 66:3310-3312.
Logan J.A., Brown-Heft T.L., Harrington S.D., Wilson N.S., McFadden A.P., Rice A.D., Pendharkar M., Palmstrøm C.J..  2017.  Growth, structural, and magnetic properties of single-crystal full-Heusler Co2TiGe thin films. Journal of Applied Physics. 121
Palmstrom C.J, Schwarz S.A, Marshall E.D, Yablonovitch E., Harbison J.P, Schwartz C.L, Florez L., Gmitter T.J, Wang L.C, Lau S.S.  1988.  A high depth resolution backside secondary ion mass spectrometry technique used for studying metal/GaAs contacts. Advanced Surface Processes for Optoelectronics: Symposium. :283-8.
Chun-Gang D, Komesu T., Hae-Kyung J, Borca C.N, Wei-Guo Y, Jianjun L, Mei W.N, Dowben P.A, Petukhov A.G, Schultz B.D et al..  2004.  Hybridization between 4f-5d states in ErAs(100). Surface Review and Letters. 11:531-9.
Rodwell M.JW, Singisetti U., Wistey M., Burek G.J, Carter A., Baraskar A., Law J., Thibeault B.J, Ji KEun, Shin B. et al..  2010.  III-V MOSFETs: scaling laws, scaling limits, fabrication processes. 2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM 2010). :6pp.-6pp..
Rodwell M.JW, Singisetti U., Wistey M., Burek G.J, Carter A., Baraskar A., Law J., Thibeault B.J, Ji KEun, Shin B. et al..  2010.  III-V MOSFETs: scaling laws, scaling limits, fabrication processes. 2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM 2010). :6pp.-6pp..
Bhat R., Koza M.A, BRASIL MJSP, Nahory R.E, Palmstrom C.J, Wilkens B.J.  1992.  INTERFACE CONTROL IN GAAS/GAINP SUPERLATTICES GROWN BY OMCVD. Journal of Crystal Growth. 124:576-582.
McFadden A., Wilson N., Brown-Heft T., Pennachio D., Pendharkar M., Logan J.A., Palmstrøm C.J..  2017.  Interface formation of epitaxial MgO/Co2MnSi(001) structures: Elemental segregation and oxygen migration. Journal of Magnetism and Magnetic Materials. 444:383-389.
Stoffel N.G, Palmstrom C.J, Wilkens B.J.  1991.  ION CHANNELING MEASUREMENT OF THE LATTICE REGISTRY OF ULTRATHIN ERAS LAYERS IN GAAS/ERAS/GAAS (001) HETEROSTRUCTURES. Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms. 56-7:792-794.
Wilkens B.J, Martinez J.A, Mounier S., Palmstrom C.J.  1991.  ION CHANNELING STUDY OF STRAINED ERAS FILMS ON (001) GAAS. Journal of Applied Physics. 70:4890-4893.
Moon-Ho P, Wang L.C, Cheng J.Y, Palmstrom C.J.  1997.  Low resistance ohmic contact scheme ( muOmega cm 2) to p-InP. Applied Physics Letters. 70:99-101.

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