Publications

Found 27 results
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Journal Article
Wuyts K., Watte J., Silverans R.E, Vanhove M., Borghs G., Palmstrom C.J, Florez L.T, Munder H..  1994.  BACK SIDE RAMAN MEASUREMENTS ON GE/PD/N-GAAS OHMIC CONTACT STRUCTURES. Applied Physics Letters. 64:2406-2408.
Hong B.WP, Song J.I, Palmstrom C.J, Vandergaag B., Chough K.B, Hayes J.R.  1994.  DC, RF, AND NOISE CHARACTERISTICS OF CARBON-DOPED BASE INP/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS. Ieee Transactions on Electron Devices. 41:19-25.
Gazibegovic S., Car D., Zhang H., Balk S.C., Logan J.A., de Moor M.W.A., Cassidy M.C., Schmits R., Xu D., Wang G.Z. et al..  2017.  Epitaxy of advanced nanowire quantum devices. Nature. 548, 434
Gazibegovic S., Car D., Zhang H., Balk S.C., Logan J.A., de Moor M.W.A., Cassidy M.C., Schmits R., Xu D., Wang G.Z. et al..  2017.  Epitaxy of advanced nanowire quantum devices. Nature. 548, 434
Gazibegovic S., Car D., Zhang H., Balk S.C., Logan J.A., de Moor M.W.A., Cassidy M.C., Schmits R., Xu D., Wang G.Z. et al..  2017.  Epitaxy of advanced nanowire quantum devices. Nature. 548, 434
Gazibegovic S., Car D., Zhang H., Balk S.C., Logan J.A., de Moor M.W.A., Cassidy M.C., Schmits R., Xu D., Wang G.Z. et al..  2017.  Epitaxy of advanced nanowire quantum devices. Nature. 548, 434
Bogaerts R., Vanesch A., Vanbockstal L., Herlach F., Peeters F.M, Derosa F., Palmstrom C.J, Allen S.J.  1993.  EXPERIMENTAL-STUDY OF THE ENERGY-BAND STRUCTURE OF SC1-XERXAS LAYERS IN PULSED MAGNETIC-FIELDS. Physica B. 184:232-235.
Bogaerts R., Vanesch A., Vanbockstal L., Herlach F., Peeters F.M, Derosa F., Palmstrom C.J, Allen S.J.  1993.  EXPERIMENTAL-STUDY OF THE ENERGY-BAND STRUCTURE OF SC1-XERXAS LAYERS IN PULSED MAGNETIC-FIELDS. Physica B. 184:232-235.
Jong-In S, Hong W.P, Palmstrom C.J, Van Der Gaag B.P, Bae CKyung.  1993.  A f T=175 GHz carbon-doped base InP/InGaAs HBT. International Electron Devices Meeting 1993. Technical Digest (Cat. No.93CH3361-3). :787-90.
Palmstrom C.J, Vandergaag B.P, Song J.I, Hong W.P, Schwarz S.A, Novak S..  1994.  GROWTH OF HEAVY CARBON-DOPED GALNAS LATTICE-MATCHED TO INP BY CHEMICAL BEAM EPITAXY. Applied Physics Letters. 64:3139-3141.
Song J.I, Palmstrom C.J, Vandergaag B.P, Hong W.P, Hayes J.R, Chough K.B.  1993.  HIGH-PERFORMANCE INP/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH HIGHLY CARBON-DOPED BASE GROWN BY CHEMICAL BEAM EPITAXY. Electronics Letters. 29:666-667.
Bogaerts R., Vanbockstal L., Herlach F., Peeters F.M, Derosa F., Palmstrom C.J, Allen S.J.  1992.  MAGNETOTRANSPORT MEASUREMENTS ON THIN SC1-XERXAS EPITAXIAL-FILMS IN PULSED MAGNETIC-FIELDS. Physica B. 177:425-429.
Song J.I, Hong W.P, Palmstrom C.J, Hayes J.R, Chough K.B, Vandergaag B.P.  1993.  MICROWAVE CHARACTERISTICS OF A CARBON-DOPED BASE INP/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTOR GROWN BY CHEMICAL BEAM EPITAXY. Electronics Letters. 29:1893-1894.
Song J.I, Hong W.P, Palmstrom C.J, Vandergaag B.P, Chough K.B.  1994.  MILLIMETER-WAVE INP/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH A SUBPICOSECOND EXTRINSIC DELAY-TIME. Electronics Letters. 30:456-457.
Megrant A., Neill C., Barends R., Chiaro B., Chen Y, Feigl L., Kelly J., Lucero E, Mariantoni M, O'Malley P.JJ et al..  2012.  Planar superconducting resonators with internal quality factors above one million. Applied Physics Letters. 100
Zhang H., Liu C-X, Gazibegovic S., Xu D., Logan J.A., Wang G., van Loo N., Bommer J.D.S., de Moor M.W.A., Car D. et al..  2018.  Quantized Majorana conductance. Nature. doi:10.1038/nature26142
Zhang H., Liu C-X, Gazibegovic S., Xu D., Logan J.A., Wang G., van Loo N., Bommer J.D.S., de Moor M.W.A., Car D. et al..  2018.  Quantized Majorana conductance. Nature. doi:10.1038/nature26142
Zhang H., Liu C-X, Gazibegovic S., Xu D., Logan J.A., Wang G., van Loo N., Bommer J.D.S., de Moor M.W.A., Car D. et al..  2018.  Quantized Majorana conductance. Nature. doi:10.1038/nature26142
Rath A., Sivakumar C., Sun C., Patel S.J., Jeong J.S., Feng J., Stecklein G., Crowell P.A., Palmstrøm C.J., Butler W.H. et al..  2018.  Reduced interface spin polarization by antiferromagnetically coupled Mn segregated to the Co2MnSi/GaAs (001) interface. Phys Rev B. 97
Ohya S, Chiaro B, Megrant A, Neill C, Barends R, Chen Y, Kelly J, Low D, Mutus J, O’Malley PJJ et al..  2014.  Room temperature deposition of sputtered TiN films for superconducting coplanar waveguide resonators. Superconductor Science and Technology. 27:015009.
Peterson T.A., Patel S.J., Geppert C.C., Christie K.D., Rath A., Pennachio D., Flatté M.E., Voyles P.M., Palmstrøm C.J., Crowell P.A.  2016.  Spin injection and detection up to room temperature in Heusler alloy/n-GaAs spin valves. Phys. Rev. B 94, 235309.
Rice A.D., Kawasaki J.K., Verma N., Pennachio D.J., Schultz B.D., Palmstrøm C.J..  2017.  Structural and electronic properties of molecular beam epitaxially grown Ni1+xTiSn films. Journal of Crystal Growth. 467
Ludge K., Schultz B.D, Vogt P., Evans M.MR, Braun W., Palmstrom C.J, Richter W., Esser N..  2002.  Structure and interface composition of Co layers grown on As-rich GaAs(001) c(4X4) surfaces. Journal of Vacuum Science & Technology B. 20:1591-1599.
Schwarz S.A, Mei P., Hwang D.M, Schwartz C.L, Venkatesan T., Palmstrom C.J, Stoffel N.G, Bhat R..  1989.  Studies of In 0.53Ga 0.47As/InP superlattice mixing and conversion. Advances in Materials, Processing and Devices in III-V Compound Semiconductors Symposium. :233-8.
Rodwell M., Wistey M., Singisetti U., Burek G., Gossard A., Stemmer S., Engel-Herbert R., Hwang Y., Zheng Y., Van de Walle C. et al..  2008.  Technology development & design for 22 nm InGaAs/InP-channel MOSFETs. 2008 IEEE 20th International Conference on Indium Phosphide & Related Materials (IPRM). :6pp.-6pp..

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