Publications

Found 370 results
Author Title [ Type(Desc)] Year
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Book
Palmstrom C.J, Morgan D.V.  1985.  Metallizations for GaAs devices and circuits. Gallium arsenide materials, devices, and circuits. :195-261.
Conference Proceedings
Preu S., Lu H., Kawasaki J.K., Ouellette D.G., Palmstrom C.J., Sherwin M.S., Gossard A.C..  2014.  THz spectroscopy of self-assembled ErSb nanowire. Conference on Lasers and Electro-Optics (CLEO) - Laser Science to Photonic Applications.
Preu S., Lu H., Kawasaki J.K., Ouellette D.G., Palmstrom C.J., Sherwin M.S., Gossard A.C..  2014.  THz spectroscopy of self-assembled ErSb nanowire. Conference on Lasers and Electro-Optics (CLEO) - Laser Science to Photonic Applications.
Journal Article
Eizenberg M., Tu K.N, Palmstrom C.J, Mayer J.W.  1984.  2-STEP AL/TI METALLIZATION TO PTSI/SI STRUCTURES. Applied Physics Letters. 45:905-907.
Stanley C.R, Welch D., Wicks G.W, Wood C.EC, Palmstrom C., Pollack F.H, Parayanthal P..  1983.  (Al xGa 1-x) 0.47In 0.53As; growth and characterization. Gallium Arsenide and Related Compounds, 1982. Tenth International Symposium on Gallium Arsenide and Related Compounds. :173-80.
Stanley C.R, Welch D., Wicks G.W, Wood C.EC, Palmstrom C., Pollack F.H, Parayanthal P..  1983.  (Al xGa 1-x) 0.47In 0.53As; growth and characterization. Gallium Arsenide and Related Compounds, 1982. Tenth International Symposium on Gallium Arsenide and Related Compounds. :173-80.
Stanley C.R, Welch D., Wicks G.W, Wood C.EC, Palmstrom C., Pollack F.H, Parayanthal P..  1983.  (Al xGa 1-x) 0.47In 0.53As; growth and characterization. Gallium Arsenide and Related Compounds, 1982. Tenth International Symposium on Gallium Arsenide and Related Compounds. :173-80.
Olowolafe J.O, Palmstrom C.J, Colgan E.G, Mayer J.W.  1985.  AL/TIW REACTION-KINETICS - INFLUENCE OF CU AND INTERFACE OXIDES. Journal of Applied Physics. 58:3440-3443.
Stanley C.R, Welch D., Wicks G.W, Wood C.EC, Palmstrom C., Pollack F.H, Parayanthal P..  1983.  (ALXGA1-X)0.47IN0.53AS - GROWTH AND CHARACTERIZATION. Institute of Physics Conference Series. :173-180.
Stanley C.R, Welch D., Wicks G.W, Wood C.EC, Palmstrom C., Pollack F.H, Parayanthal P..  1983.  (ALXGA1-X)0.47IN0.53AS - GROWTH AND CHARACTERIZATION. Institute of Physics Conference Series. :173-180.
Stanley C.R, Welch D., Wicks G.W, Wood C.EC, Palmstrom C., Pollack F.H, Parayanthal P..  1983.  (ALXGA1-X)0.47IN0.53AS - GROWTH AND CHARACTERIZATION. Institute of Physics Conference Series. :173-180.
Mills P.J, Green P.F, Palmstrom C.J, Mayer J.W, Kramer E.J.  1984.  ANALYSIS OF DIFFUSION IN POLYMERS BY FORWARD RECOIL SPECTROMETRY. Applied Physics Letters. 45:957-959.
Harmon N.J., Peterson T.A., Geppert C.C., Patel S.J., Palmstrøm C.J, Crowell P.A., Flatté M.E..  2015.  Anisotropic spin relaxation in n-GaAs from strong inhomogeneous hyperfine fields produced by the dynamical polarization of nuclei. Phys Rev B. 92, 140201
Harmon N.J., Peterson T.A., Geppert C.C., Patel S.J., Palmstrøm C.J, Crowell P.A., Flatté M.E..  2015.  Anisotropic spin relaxation in n-GaAs from strong inhomogeneous hyperfine fields produced by the dynamical polarization of nuclei. Phys Rev B. 92, 140201
Harmon N.J., Peterson T.A., Geppert C.C., Patel S.J., Palmstrøm C.J, Crowell P.A., Flatté M.E..  2015.  Anisotropic spin relaxation in n-GaAs from strong inhomogeneous hyperfine fields produced by the dynamical polarization of nuclei. Phys Rev B. 92, 140201
Jeong H.K, Komesu T., Dowben P.A, Schultz B.D, Palmstrom C.J.  2002.  The anomalous effective surface Debye temperature of ErAs (100). Physics Letters A. 302:217-223.
Suominen H.J., Danon J., Kjaergaard M., Flensberg K., Shabani J., Palmstrøm C.J., Nichele F., Marcus C.M..  2017.  Anomalous Fraunhofer Interference in Epitaxial Superconductor-Semiconductor Josephson Junctions. Phys Rev B. 95, 035307
Lund M.S, Dong J.W, Lu J., Dong X.Y, Palmstrom C.J, Leighton C..  2002.  Anomalous magnetotransport properties of epitaxial full Heusler alloys. Applied Physics Letters. 80:4798-4800.
Shabani J., DasSarma S., Palmstrøm C.J.  2014.  An apparent metal-insulator transition in high-mobility two-dimensional InAs heterostructures. Phys. Rev. B. 90, 161303 (2014).
LeBeau JM, Hu QO, Palmstrom CJ, Stemmer S.  2008.  Atomic structure of postgrowth annealed epitaxial Fe/(001) GaAs interfaces. Applied Physics Letters. 93
Wuyts K., Watte J., Silverans R.E, Vanhove M., Borghs G., Palmstrom C.J, Florez L.T, Munder H..  1994.  BACK SIDE RAMAN MEASUREMENTS ON GE/PD/N-GAAS OHMIC CONTACT STRUCTURES. Applied Physics Letters. 64:2406-2408.
Schwarz S.A, Palmstrom C.J, Schwartz C.L, Sands T., Shantharama L.G, Harbison J.P, Florez L.T, Marshall E.D, Han C.C, Lau S.S et al..  1990.  BACKSIDE SECONDARY ION MASS-SPECTROMETRY INVESTIGATION OF OHMIC AND SCHOTTKY CONTACTS ON GAAS. Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films. 8:2079-2083.
Schwarz S.A, Palmstrom C.J, Bhat R., Koza M., Wang L.C, Park M.H.  1995.  Backside SIMS study of Ge/Pd non-alloyed ohmic contacts on InGaAs. Beam-Solid Interactions for Materials Synthesis and Characterization. Symposium. :471-6.
Schwarz S.A, Palmstrom C.J, Bhat R., Koza M., Wang L.C, Park M.H.  1995.  Backside SIMS study of Ge/Pd non-alloyed ohmic contacts on InGaAs. Beam-Solid Interactions for Materials Synthesis and Characterization. Symposium. :471-6.

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