Publications

Found 155 results
Author Title [ Type(Desc)] Year
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Book
Palmstrom C.J, Morgan D.V.  1985.  Metallizations for GaAs devices and circuits. Gallium arsenide materials, devices, and circuits. :195-261.
Journal Article
Eizenberg M., Tu K.N, Palmstrom C.J, Mayer J.W.  1984.  2-STEP AL/TI METALLIZATION TO PTSI/SI STRUCTURES. Applied Physics Letters. 45:905-907.
Olowolafe J.O, Palmstrom C.J, Colgan E.G, Mayer J.W.  1985.  AL/TIW REACTION-KINETICS - INFLUENCE OF CU AND INTERFACE OXIDES. Journal of Applied Physics. 58:3440-3443.
Mills P.J, Green P.F, Palmstrom C.J, Mayer J.W, Kramer E.J.  1984.  ANALYSIS OF DIFFUSION IN POLYMERS BY FORWARD RECOIL SPECTROMETRY. Applied Physics Letters. 45:957-959.
Mills P.J, Green P.F, Palmstrom C.J, Mayer J.W, Kramer E.J.  1984.  ANALYSIS OF DIFFUSION IN POLYMERS BY FORWARD RECOIL SPECTROMETRY. Applied Physics Letters. 45:957-959.
Suominen H.J., Danon J., Kjaergaard M., Flensberg K., Shabani J., Palmstrøm C.J., Nichele F., Marcus C.M..  2017.  Anomalous Fraunhofer Interference in Epitaxial Superconductor-Semiconductor Josephson Junctions. Phys Rev B. 95, 035307
Wuyts K., Watte J., Silverans R.E, Vanhove M., Borghs G., Palmstrom C.J, Florez L.T, Munder H..  1994.  BACK SIDE RAMAN MEASUREMENTS ON GE/PD/N-GAAS OHMIC CONTACT STRUCTURES. Applied Physics Letters. 64:2406-2408.
Schwarz S.A, Palmstrom C.J, Schwartz C.L, Sands T., Shantharama L.G, Harbison J.P, Florez L.T, Marshall E.D, Han C.C, Lau S.S et al..  1990.  BACKSIDE SECONDARY ION MASS-SPECTROMETRY INVESTIGATION OF OHMIC AND SCHOTTKY CONTACTS ON GAAS. Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films. 8:2079-2083.
Schwarz S.A, Palmstrom C.J, Schwartz C.L, Sands T., Shantharama L.G, Harbison J.P, Florez L.T, Marshall E.D, Han C.C, Lau S.S et al..  1990.  BACKSIDE SECONDARY ION MASS-SPECTROMETRY INVESTIGATION OF OHMIC AND SCHOTTKY CONTACTS ON GAAS. Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films. 8:2079-2083.
Palmstrom C.J, Chang C.C, Yu A., Galvin G.J, Mayer J.W.  1987.  CO/GAAS INTERFACIAL REACTIONS. Journal of Applied Physics. 62:3755-3762.
Mills P.J, Palmstrom C.J, Kramer E.J.  1986.  CONCENTRATION PROFILES OF NON-FICKIAN DIFFUSANTS IN GLASSY-POLYMERS BY RUTHERFORD BACKSCATTERING SPECTROMETRY. Journal of Materials Science. 21:1479-1486.
Palmstrom C.J, Morgan D.V, Howes M.J.  1978.  CONTACT DEGRADATION OF GAAS TRANSFERRED ELECTRON DEVICES. Nuclear Instruments & Methods. 150:305-311.
Palmstrom C.J, Morgan D.V, Howes M.J.  1977.  CONTACT-DEGRADATION STUDIES ON GAAS TRANSFERRED-ELECTRON DEVICES USING A FOCUSED BACKSCATTERING TECHNIQUE. Electronics Letters. 13:504-505.
Makowski J.D, Anderson B.D, Chan W.S, Saarinen M.J, Palmstrom C.J, Talghader J.J.  2009.  Coupling of quantum states with mechanical heterostructures. 15th International Conference on Solid-State Sensors, Actuators and Microsystems. Transducers 2009. :489-92.
Kawasaki JK, Timm R, Buehl TE, Lundgren E, Mikkelsen A, Gossard AC, Palmstrom CJ.  2011.  Cross-sectional scanning tunneling microscopy and spectroscopy of semimetallic ErAs nanostructures embedded in GaAs. Journal of Vacuum Science & Technology B. 29
Hjort M., Kratzer P., Lehmann S., Patel S.J., Dick K.A., Palmstrøm C.J., Timm R., Mikkelsen A..  2017.  Crystal Structure Induced Preferential Surface Alloying of Sb on Wurtzite/Zinc Blende GaAs Nanowires. Nano Letters. 17
Gyulai J., Fastow R., Kavanagh K., Thompson M.O, Palmstrom C.J, Hewett C.A, Mayer J.W.  1983.  Crystallization of amorphous silicon films by pulsed ion beam annealing. Laser-Solid Interactions and Transient Thermal Processing of Materials. :455-60.
Shojaei B., O'Malley P.JJ, Shabani J., Roushan P., Schultz B.D, Lutchyn R.M., Nayak C., Martinis J.M., Palmstrom C.J.  2016.  Demonstration of gate control of spin splitting in a high-mobility InAs/AlSb two-dimensional electron gas. Physical Review B. 93, 075302
Meeker M.A, Magill B.A, Merritt T.R, Bhowmick M., McCutcheon K., Khodaparast G.A, Tischler J.G, McGill S., Choi S.G, Palmstrøm C.J.  2013.  Dynamics of photoexcited carriers and spins in InAsP ternary alloys. Applied Physics Letters. 102:-.
Meeker M.A, Magill B.A, Merritt T.R, Bhowmick M., McCutcheon K., Khodaparast G.A, Tischler J.G, McGill S., Choi S.G, Palmstrøm C.J.  2013.  Dynamics of photoexcited carriers and spins in InAsP ternary alloys. Applied Physics Letters. 102:-.
Meeker M.A, Magill B.A, Merritt T.R, Bhowmick M., McCutcheon K., Khodaparast G.A, Tischler J.G, McGill S., Choi S.G, Palmstrøm C.J.  2013.  Dynamics of photoexcited carriers and spins in InAsP ternary alloys. Applied Physics Letters. 102:-.
Meeker M.A, Magill B.A, Merritt T.R, Bhowmick M., McCutcheon K., Khodaparast G.A, Tischler J.G, McGill S., Choi S.G, Palmstrøm C.J.  2013.  Dynamics of photoexcited carriers and spins in InAsP ternary alloys. Applied Physics Letters. 102:-.
Meeker M.A, Magill B.A, Merritt T.R, Bhowmick M., McCutcheon K., Khodaparast G.A, Tischler J.G, McGill S., Choi S.G, Palmstrøm C.J.  2013.  Dynamics of photoexcited carriers and spins in InAsP ternary alloys. Applied Physics Letters. 102:-.
Palmstrom C.J, Cheeks T.L, Gilchrist H.L, Zhu J.G, Carter C.B, Wilkens B.J, Martin R..  1992.  EFFECT OF ORIENTATION ON THE SCHOTTKY-BARRIER HEIGHT OF THERMODYNAMICALLY STABLE EPITAXIAL METAL GAAS STRUCTURES. Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films. 10:1946-1952.

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