Publications

Found 11 results
Author Title [ Type(Desc)] Year
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Journal Article
Eizenberg M., Tu K.N, Palmstrom C.J, Mayer J.W.  1984.  2-STEP AL/TI METALLIZATION TO PTSI/SI STRUCTURES. Applied Physics Letters. 45:905-907.
Schultz B.D, Farrell H.H, Evans M.MR, Ludge K., Palmstrom C.J.  2002.  ErAs interlayers for limiting interfacial reactions in Fe/GaAs(100) heterostructures. Journal of Vacuum Science & Technology B. 20:1600-1608.
Eid K.F, Stone M.B, Ku K.C, Maksimov O., Schiffer P., Samarth N., Shih T.C, Palmstrom C.J.  2004.  Exchange biasing of the ferromagnetic semiconductor Ga1-xMnxAs. Applied Physics Letters. 85:1556-1558.
Eid K.F, Stone M.B, Maksimov O., Shih T.C, Ku K.C, Fadgen W., Palmstrom C.J, Schiffer P., Samarth N..  2005.  Exchange biasing of the ferrornagnetic semiconductor (Ga,Mn)As by MnO (invited). Journal of Applied Physics. 97
Hilton J.L, Schultz B.D, McKernan S., Spanton S.M, Evans M.MR, Palmstrom C.J.  2005.  Phase behavior of thin film Mn/GaAs interfacial reactions. Journal of Vacuum Science & Technology B. 23:1752-1758.
Brat T., Eizenberg M., Fastow R., Palmstrom C.J, Mayer J.W.  1985.  PULSED PROTON-BEAM ANNEALING OF IR AND IRXV100-X THIN-FILMS ON SILICON. Journal of Applied Physics. 57:264-269.
Ludge K., Schultz B.D, Vogt P., Evans M.MR, Braun W., Palmstrom C.J, Richter W., Esser N..  2002.  Structure and interface composition of Co layers grown on As-rich GaAs(001) c(4X4) surfaces. Journal of Vacuum Science & Technology B. 20:1591-1599.
Ludge K., Schultz B.D, Vogt P., Evans M.MR, Braun W., Palmstrom C.J, Richter W., Esser N..  2002.  Structure and interface composition of Co layers grown on As-rich GaAs(001) c(4X4) surfaces. Journal of Vacuum Science & Technology B. 20:1591-1599.
Fitzsimmons M.R, Kirby B.J, Hengartner N.W, Trouw F., Erickson M.J, Flexner S.D, Kondo T., Adelmann C., Palmstrom C.J, Crowell P.A et al..  2007.  Suppression of nuclear polarization near the surface of optically pumped GaAs. Physical Review B. 76
Rodwell M., Wistey M., Singisetti U., Burek G., Gossard A., Stemmer S., Engel-Herbert R., Hwang Y., Zheng Y., Van de Walle C. et al..  2008.  Technology development & design for 22 nm InGaAs/InP-channel MOSFETs. 2008 IEEE 20th International Conference on Indium Phosphide & Related Materials (IPRM). :6pp.-6pp..
Engebretson D.M, Berezovsky J., Park J.P, Chen L.C, Palmstrom C.J, Crowell P.A.  2002.  Time-domain ferromagnetic resonance in epitaxial thin films. Journal of Applied Physics. 91:8040-8042.