Publications

Found 68 results
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Journal Article
Jeong H.K, Komesu T., Dowben P.A, Schultz B.D, Palmstrom C.J.  2002.  The anomalous effective surface Debye temperature of ErAs (100). Physics Letters A. 302:217-223.
Suominen H.J., Danon J., Kjaergaard M., Flensberg K., Shabani J., Palmstrøm C.J., Nichele F., Marcus C.M..  2017.  Anomalous Fraunhofer Interference in Epitaxial Superconductor-Semiconductor Josephson Junctions. Phys Rev B. 95, 035307
Lund M.S, Dong J.W, Lu J., Dong X.Y, Palmstrom C.J, Leighton C..  2002.  Anomalous magnetotransport properties of epitaxial full Heusler alloys. Applied Physics Letters. 80:4798-4800.
Lund M.S, Dong J.W, Lu J., Dong X.Y, Palmstrom C.J, Leighton C..  2002.  Anomalous magnetotransport properties of epitaxial full Heusler alloys. Applied Physics Letters. 80:4798-4800.
Shabani J., DasSarma S., Palmstrøm C.J.  2014.  An apparent metal-insulator transition in high-mobility two-dimensional InAs heterostructures. Phys. Rev. B. 90, 161303 (2014).
Allen S.J, Derosa F., Palmstrom C.J, Zrenner A..  1991.  BAND-STRUCTURE, QUANTUM CONFINEMENT, AND EXCHANGE SPLITTING IN SC1-XERXAS EPITAXIAL LAYERS BURIED IN GAAS. Physical Review B. 43:9599-9609.
Hjort M., Kratzer P., Lehmann S., Patel S.J., Dick K.A., Palmstrøm C.J., Timm R., Mikkelsen A..  2017.  Crystal Structure Induced Preferential Surface Alloying of Sb on Wurtzite/Zinc Blende GaAs Nanowires. Nano Letters. 17
Duszak R., Palmstrom C.J, Florez L.T, Yang Y.N, Weaver J.H.  1992.  DRAMATIC WORK FUNCTION VARIATIONS OF MOLECULAR-BEAM EPITAXIALLY GROWN GAAS(100) SURFACES. Journal of Vacuum Science & Technology B. 10:1891-1897.
Xie J.Q, Lu J., Dong J.W, Dong X.Y, Shih T.C, McKernan S., Palmstrom C.J.  2005.  Effects of growth temperature on the structural and magnetic properties of epitaxial Ni2MnIn thin films on InAs(001). Journal of Applied Physics. 97
Xie J.Q, Lu J., Dong J.W, Dong X.Y, Shih T.C, McKernan S., Palmstrom C.J.  2005.  Effects of growth temperature on the structural and magnetic properties of epitaxial Ni2MnIn thin films on InAs(001). Journal of Applied Physics. 97
Komesu T., Jeong H.K, Choi J., Borca C.N, Dowben P.A, Petukhov A.G, Schultz B.D, Palmstrom C.J.  2003.  Electronic structure of ErAs(100). Physical Review B. 67
Chen L.C, Dong J.W, Schultz B.D, Palmstrom C.J, Berezovsky J., Isakovic A., Crowell P.A, Tabat N..  2000.  Epitaxial ferromagnetic metal/GaAs(100) heterostructures. Journal of Vacuum Science & Technology B. 18:2057-2062.
Shih T.C, Xie J.Q, Dong J.W, Dong X.Y, Srivastava S., Adelmann C., McKernan S., James R.D, Palmstrom C.J.  2006.  Epitaxial growth and characterization of single crystal ferromagnetic shape memory Co2NiGa films. Ferroelectrics. 342:35-+.
Shih T.C, Xie J.Q, Dong J.W, Dong X.Y, Srivastava S., Adelmann C., McKernan S., James R.D, Palmstrom C.J.  2006.  Epitaxial growth and characterization of single crystal ferromagnetic shape memory Co2NiGa films. Ferroelectrics. 342:35-+.
Dong J.W, Chen L.C, Xie J.Q, Muller T.AR, Carr D.M, Palmstrom C.J, McKernan S., Pan Q., James R.D.  2000.  Epitaxial growth of ferromagnetic Ni2MnGa on GaAs(001) using NiGa interlayers. Journal of Applied Physics. 88:7357-7359.
Xie J.Q, Dong J.W, Lu J., Palmstrom C.J, McKernan S..  2001.  Epitaxial growth of ferromagnetic Ni2MnIn on (001) InAs. Applied Physics Letters. 79:1003-1005.
Gazibegovic S., Car D., Zhang H., Balk S.C., Logan J.A., de Moor M.W.A., Cassidy M.C., Schmits R., Xu D., Wang G.Z. et al..  2017.  Epitaxy of advanced nanowire quantum devices. Nature. 548, 434
Allen S.J, Tabatabaie N., Palmstrom C.J, Hull G.W, Sands T., Derosa F., Gilchrist H.L, Garrison K.C.  1989.  ERAS EPITAXIAL LAYERS BURIED IN GAAS - MAGNETOTRANSPORT AND SPIN-DISORDER SCATTERING. Physical Review Letters. 62:2309-2312.
Bogaerts R., Herlach F., Dekeyser A., Peeters F.M, Derosa F., Palmstrom C.J, Brehmer D., Allen S.J.  1996.  Experimental determination of the Fermi surface of thin Sc1-xErxAs epitaxial layers in pulsed magnetic fields. Physical Review B. 53:15951-15963.
Bogaerts R., Herlach F., Dekeyser A., Peeters F.M, Derosa F., Palmstrom C.J, Brehmer D., Allen S.J.  1996.  Experimental determination of the Fermi surface of thin Sc1-xErxAs epitaxial layers in pulsed magnetic fields. Physical Review B. 53:15951-15963.
Bogaerts R., Vanesch A., Vanbockstal L., Herlach F., Peeters F.M, Derosa F., Palmstrom C.J, Allen S.J.  1993.  EXPERIMENTAL-STUDY OF THE ENERGY-BAND STRUCTURE OF SC1-XERXAS LAYERS IN PULSED MAGNETIC-FIELDS. Physica B. 184:232-235.
Dong J.W, Chen L.C, McKernan S., Xie J.Q, Figus M.T, James R.D, Palmstrom C.J.  2000.  Formation and characterization of single crystal Ni 2MnGa thin films. Materials for Smart Systems. Symposium (Materials Research Society Proceedings Vol.604). :297-302.
Farrell H.H, Lu J., Schultz B.D, Denison A.B, Palmstrom C.J.  2001.  GaAs(111)B(root 19X root 19)R23.4 degrees surface reconstruction. Journal of Vacuum Science & Technology B. 19:1597-1605.
Wang L.C, Park M.H, Deng F., Clawson A., Lau S.S, Hwang D.M, Palmstrom C.J.  1995.  GE/PD (ZN) OHMIC CONTACT SCHEME ON P-INP BASED ON THE SOLID-PHASE REGROWTH PRINCIPLE. Applied Physics Letters. 66:3310-3312.
Cassels LE, Buehl TE, Burke PG, Palmstrom CJ, Gossard AC, Pernot G, Shakouri A, Haughn CR, Doty MF, Zide JMO.  2011.  Growth and characterization of TbAs:GaAs nanocomposites. Journal of Vacuum Science & Technology B. 29

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