Publications

Found 88 results
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Journal Article
Engebretson D.M, Berezovsky J., Park J.P, Chen L.C, Palmstrom C.J, Crowell P.A.  2002.  Time-domain ferromagnetic resonance in epitaxial thin films. Journal of Applied Physics. 91:8040-8042.
Koltun R, Hall JL, Mates TE, Bowers JE, Schultz BD, Palmstrom CJ.  2013.  Thermoelectric properties of single crystal Sc[sub 1 - x]Er[sub x]As:InGaAs nanocomposites. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 31:041401.
Clinger LE, Pernot G, Buehl TE, Burke PG, Gossard AC, Palmstrom CJ, Shakouri A, Zide JMO.  2012.  Thermoelectric properties of epitaxial TbAs:InGaAs nanocomposites. Journal of Applied Physics. 111
Clinger LE, Pernot G, Buehl TE, Burke PG, Gossard AC, Palmstrom CJ, Shakouri A, Zide JMO.  2012.  Thermoelectric properties of epitaxial TbAs:InGaAs nanocomposites. Journal of Applied Physics. 111
Bhattacharya K., DeSimone A., Hane K.F, James R.D, Palmstrom C.J.  1999.  Tents and tunnels on martensitic films. Materials Science and Engineering a-Structural Materials Properties Microstructure and Processing. 273:685-689.
Rodwell M., Wistey M., Singisetti U., Burek G., Gossard A., Stemmer S., Engel-Herbert R., Hwang Y., Zheng Y., Van de Walle C. et al..  2008.  Technology development & design for 22 nm InGaAs/InP-channel MOSFETs. 2008 IEEE 20th International Conference on Indium Phosphide & Related Materials (IPRM). :6pp.-6pp..
Fitzsimmons M.R, Kirby B.J, Hengartner N.W, Trouw F., Erickson M.J, Flexner S.D, Kondo T., Adelmann C., Palmstrom C.J, Crowell P.A et al..  2007.  Suppression of nuclear polarization near the surface of optically pumped GaAs. Physical Review B. 76
Schwarz S.A, Mei P., Hwang D.M, Schwartz C.L, Venkatesan T., Palmstrom C.J, Stoffel N.G, Bhat R..  1989.  Studies of In 0.53Ga 0.47As/InP superlattice mixing and conversion. Advances in Materials, Processing and Devices in III-V Compound Semiconductors Symposium. :233-8.
Ludge K., Schultz B.D, Vogt P., Evans M.MR, Braun W., Palmstrom C.J, Richter W., Esser N..  2002.  Structure and interface composition of Co layers grown on As-rich GaAs(001) c(4X4) surfaces. Journal of Vacuum Science & Technology B. 20:1591-1599.
Dong X.Y, Adelmann C., Xie J.Q, Palmstrom C.J, Lou X., Strand J., Crowell P.A, Barnes J.P, Petford-Long A.K.  2005.  Spin injection from the Heusler alloy CO2MnGe into Al0.1Ga0.9As/GaAs heterostructures. Applied Physics Letters. 86
Bogaerts R., Dekeyser A., Herlach F., Peeters F.M, Derosa F., Palmstrom C.J, Brehmer D., Allen S.J.  1994.  SIZE EFFECTS IN THE TRANSPORT-PROPERTIES OF THIN SC(1-X)ER(X)AS EPITAXIAL LAYERS BURIED IN GAAS. Solid-State Electronics. 37:789-792.
Bogaerts R., Dekeyser A., Herlach F., Peeters F.M, Derosa F., Palmstrom C.J, Brehmer D., Allen S.J.  1994.  SIZE EFFECTS IN THE TRANSPORT-PROPERTIES OF THIN SC(1-X)ER(X)AS EPITAXIAL LAYERS BURIED IN GAAS. Solid-State Electronics. 37:789-792.
Kadow C., Fleischer S.B, Ibbetson J.P, Bowers J.E, Gossard A.C, Dong J.W, Palmstrom C.J.  1999.  Self-assembled ErAs islands in GaAs: Growth and subpicosecond carrier dynamics. Applied Physics Letters. 75:3548-3550.
Ohya S, Chiaro B, Megrant A, Neill C, Barends R, Chen Y, Kelly J, Low D, Mutus J, O’Malley PJJ et al..  2014.  Room temperature deposition of sputtered TiN films for superconducting coplanar waveguide resonators. Superconductor Science and Technology. 27:015009.
Yoneda J., Otsuka T., Takakura T., Pioro-Ladrière M., Brunner R., Lu H., Nakajima T., Obata T., Palmstrøm C.J, Gossard A.C et al..  2015.  Robust micro-magnet design for fast electrical manipulations of single spins in quantum dots. Applied Physics Express. 8, 084401
Brehmer D.E, Zhang K., Schwarz C.J, Chau S.P, Allen S.J, Ibbetson J.P, Zhang J.P, Palmstrom C.J, Wilkens B..  1995.  RESONANT-TUNNELING THROUGH ERAS SEMIMETAL QUANTUM-WELLS. Applied Physics Letters. 67:1268-1270.
Brehmer D.E, Zhang K., Schwarz C.J, Chau S.P, Allen S.J, Ibbetson J.P, Zhang J.P, Petukhov A.G, Palmstrom C.J, Wilkens B..  1996.  Resonant tunneling through rare earth arsenide, semimetal quantum wells. Solid-State Electronics. 40:241-244.
Brehmer D.E, Ibbetson J.P, Kai Z, Petukhov A.G, Schwarz C.J, Chau S.P, Allen S.J, Palmstrom C.J, Zhang J.P, Wilkens B..  1995.  Resonant tunneling through (Al,Ga)As/ErAs/(Al,Ga)As, semi-metal quantum wells. Semiconductor Heteroepitaxy. Growth, Characterization and Device Applications. :672-5.
Rath A., Sivakumar C., Sun C., Patel S.J., Jeong J.S., Feng J., Stecklein G., Crowell P.A., Palmstrøm C.J., Butler W.H. et al..  2018.  Reduced interface spin polarization by antiferromagnetically coupled Mn segregated to the Co2MnSi/GaAs (001) interface. Phys Rev B. 97
Bogaerts R., De Keyser A., Herlach F., Peeters F.M, Derosa F., Palmstrom C.J, Brehmer D., Allen, Jr. S.J.  1995.  Quantum oscillations in the Hall effect of thin Sc 1-xEr xAs epitaxial layers buried in GaAs. 11th International Conference, High Magnetic Fields in the Physics of Semiconductors. :706-9.
Bogaerts R., De Keyser A., Herlach F., Peeters F.M, Derosa F., Palmstrom C.J, Brehmer D., Allen, Jr. S.J.  1995.  Quantum oscillations in the Hall effect of thin Sc 1-xEr xAs epitaxial layers buried in GaAs. 11th International Conference, High Magnetic Fields in the Physics of Semiconductors. :706-9.
Zhang H., Liu C-X, Gazibegovic S., Xu D., Logan J.A., Wang G., van Loo N., Bommer J.D.S., de Moor M.W.A., Car D. et al..  2018.  Quantized Majorana conductance. Nature. doi:10.1038/nature26142
Zhang H., Liu C-X, Gazibegovic S., Xu D., Logan J.A., Wang G., van Loo N., Bommer J.D.S., de Moor M.W.A., Car D. et al..  2018.  Quantized Majorana conductance. Nature. doi:10.1038/nature26142
Brat T., Eizenberg M., Fastow R., Palmstrom C.J, Mayer J.W.  1985.  PULSED PROTON-BEAM ANNEALING OF IR AND IRXV100-X THIN-FILMS ON SILICON. Journal of Applied Physics. 57:264-269.
Liu X., Ramu A.T, Bowers J.E, Palmstrom C.J, Burke P.G, Lu H., Gossard A.C.  2011.  Properties of molecular beam epitaxially grown ScAs:InGaAs and ErAs:InGaAs nanocomposites for thermoelectric applications. Journal of Crystal Growth. 316:56-59.

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