Publications

Found 56 results
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Journal Article
Wolf J.A, Anderson K.K, Dahlberg E.D, Crowell P.A, Chen L.C, Palmstrom C.J.  2003.  Tunable magnetization reversal in epitaxial bcc Fe1-xCox films on vicinal surfaces. Journal of Applied Physics. 93:8256-8258.
Kjaergaard M., Suominen H.J., Nowak M.P., Akhmerov A.R., Shabani J., Palmstrøm C.J., Nichele F., Marcus C.M..  2017.  Transparent Semiconductor-Superconductor Interface and Induced Gap in an Epitaxial Heterostructure Josephson Junction. Physical Review Applied. 7, 034029
Rodwell M., Wistey M., Singisetti U., Burek G., Gossard A., Stemmer S., Engel-Herbert R., Hwang Y., Zheng Y., Van de Walle C. et al..  2008.  Technology development & design for 22 nm InGaAs/InP-channel MOSFETs. 2008 IEEE 20th International Conference on Indium Phosphide & Related Materials (IPRM). :6pp.-6pp..
Rodwell M., Wistey M., Singisetti U., Burek G., Gossard A., Stemmer S., Engel-Herbert R., Hwang Y., Zheng Y., Van de Walle C. et al..  2008.  Technology development & design for 22 nm InGaAs/InP-channel MOSFETs. 2008 IEEE 20th International Conference on Indium Phosphide & Related Materials (IPRM). :6pp.-6pp..
Patel SJ, Kawasaki JK, Logan J, Schultz BD, Adell J., Thiagarajan B., Mikkelsen A., Palmstrøm CJ.  2014.  Surface and electronic structure of epitaxial PtLuSb (001) thin films. Applied Physics Letters. 104:-.
Fitzsimmons M.R, Kirby B.J, Hengartner N.W, Trouw F., Erickson M.J, Flexner S.D, Kondo T., Adelmann C., Palmstrom C.J, Crowell P.A et al..  2007.  Suppression of nuclear polarization near the surface of optically pumped GaAs. Physical Review B. 76
Adelmann C., Schultz B.D, Dong X.Y, Palmstrom C.J, Lou X., Strand J., Xie J.Q, Park S., Fitzsimmons M.R, Crowell P.A.  2004.  Spin injection into semiconductors: the role of the Fe/Al x Ga 1-xAs interface. 2004 International Conference on Indium Phosphide and Related Materials. 16th IPRM (IEEE Cat. No.04CH37589). :505-10.
Dong X.Y, Adelmann C., Xie J.Q, Palmstrom C.J, Lou X., Strand J., Crowell P.A, Barnes J.P, Petford-Long A.K.  2005.  Spin injection from the Heusler alloy CO2MnGe into Al0.1Ga0.9As/GaAs heterostructures. Applied Physics Letters. 86
Dong X.Y, Lou X., Adelmann C., Strand J., Petford-Long A.K, Crowell P.A, Palmstrom C.J.  2005.  Spin injection from the Heusler alloy Co 2MnGe into Al 0.1Ga 0.9As/GaAs heterostructures. INTERMAG Asia 2005: Digest of the IEEE International Magnetics Conference (IEEE Cat. No.05CH37655). :1195-6.
Adelmann C., Hilton J.L, Schultz B.D, McKernan S., Palmstrom C.J, Lou X., Chiang H.S, Crowell P.A.  2006.  Spin injection from perpendicular magnetized ferromagnetic delta-MnGa into (Al,Ga)As heterostructures. Applied Physics Letters. 89
Adelmann C., Lou X., Strand J., Palmstrom C.J, Crowell P.A.  2005.  Spin injection and relaxation in ferromagnet-semiconductor heterostructures. Physical Review B. 71
Schultz B.D, Marom N., Naveh D., Lou X., Adelmann C., Strand J., Crowell P.A, Kronik L., Palmstrom C.J.  2009.  Spin injection across the Fe/GaAs interface: Role of interfacial ordering. Physical Review B. 80
Bogaerts R., Dekeyser A., Herlach F., Peeters F.M, Derosa F., Palmstrom C.J, Brehmer D., Allen S.J.  1994.  SIZE EFFECTS IN THE TRANSPORT-PROPERTIES OF THIN SC(1-X)ER(X)AS EPITAXIAL LAYERS BURIED IN GAAS. Solid-State Electronics. 37:789-792.
Dong J.W, Xie J.Q, Lu J., Adelmann C., Palmstrom C.J, Cui J., Pan Q., Shield T.W, James R.D, McKernan S..  2004.  Shape memory and ferromagnetic shape memory effects in single-crystal Ni2MnGa thin films. Journal of Applied Physics. 95:2593-2600.
Brehmer D.E, Zhang K., Schwarz C.J, Chau S.P, Allen S.J, Ibbetson J.P, Zhang J.P, Palmstrom C.J, Wilkens B..  1995.  RESONANT-TUNNELING THROUGH ERAS SEMIMETAL QUANTUM-WELLS. Applied Physics Letters. 67:1268-1270.
Brehmer D.E, Zhang K., Schwarz C.J, Chau S.P, Allen S.J, Ibbetson J.P, Zhang J.P, Petukhov A.G, Palmstrom C.J, Wilkens B..  1996.  Resonant tunneling through rare earth arsenide, semimetal quantum wells. Solid-State Electronics. 40:241-244.
Brehmer D.E, Ibbetson J.P, Kai Z, Petukhov A.G, Schwarz C.J, Chau S.P, Allen S.J, Palmstrom C.J, Zhang J.P, Wilkens B..  1995.  Resonant tunneling through (Al,Ga)As/ErAs/(Al,Ga)As, semi-metal quantum wells. Semiconductor Heteroepitaxy. Growth, Characterization and Device Applications. :672-5.
Bogaerts R., De Keyser A., Herlach F., Peeters F.M, Derosa F., Palmstrom C.J, Brehmer D., Allen, Jr. S.J.  1995.  Quantum oscillations in the Hall effect of thin Sc 1-xEr xAs epitaxial layers buried in GaAs. 11th International Conference, High Magnetic Fields in the Physics of Semiconductors. :706-9.
Kjaergaard M., Nichele F., Suominen H.J., Nowak M.P., Wimmer M., Akhmerov A.R., Folk J.A., Flensberg K., Shabani J., Palmstrøm C.J. et al..  2016.  Quantized conductance doubling and hard gap in a two-dimensional semiconductor-superconductor heterostructure. Nature Communications. 7:12841
Schultz B.D, Adelmann C., Dong X.Y, McKernan S., Palmstrom C.J.  2008.  Phase formation in the thin film Fe/GaAs system. Applied Physics Letters. 92:091914-1-3.
Schultz B.D, Adelmann C., Dong X.Y, McKernan S., Palmstrom C.J.  2008.  Phase formation in the thin film Fe/GaAs system. Applied Physics Letters. 92
Choi S.G, Srivastava S.K, Palmstrom C.J, Kim Y.D, Cooper S.L, Aspnes D.E.  2005.  Optical properties of (GaSb)(3n)(AlSb)(n) (1 <= n <= 5) superlattices. Journal of Vacuum Science & Technology B. 23:1149-1153.
Crooker S.A, Furis M., Lou X., Crowell P.A, Smith D.L, Adelmann C., Palmstrom C.J.  2007.  Optical and electrical spin injection and spin transport in hybrid Fe/GaAs devices. Journal of Applied Physics. 101
Allen S.J, Brehmer D., Palmstrom C.J.  1993.  Novel electronics enabled by rare earth arsenides buried in III-V semiconductors. Rare Earth Doped Semiconductors Symposium. :307-17.
Makowski JD, Anderson BD, Chang WS, Saarinen MJ, Palmstrom CJ, Talghader JJ.  2010.  Mechanical Construction of Semiconductor Band Gaps. Ieee Journal of Quantum Electronics. 46:1261-1267.

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