Publications

Found 6 results
Author [ Title(Desc)] Type Year
Filters: Author is Shojaei, B.  [Clear All Filters]
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Shojaei B., O'Malley P.JJ, Shabani J., Roushan P., Schultz B.D, Lutchyn R.M., Nayak C., Martinis J.M., Palmstrom C.J.  2016.  Demonstration of gate control of spin splitting in a high-mobility InAs/AlSb two-dimensional electron gas. Physical Review B. 93, 075302
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Gazibegovic S., Car D., Zhang H., Balk S.C., Logan J.A., de Moor M.W.A., Cassidy M.C., Schmits R., Xu D., Wang G.Z. et al..  2017.  Epitaxy of advanced nanowire quantum devices. Nature. 548, 434
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Shabani J., McFadden A.P, Shojaei B., Palmstrøm C.J.  2014.  Gating of high-mobility InAs metamorphic heterostructures. Appl. Phys. Lett. 105
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Shojaei B., McFadden A.P., Pendharkar M., Lee J.S., Flatté M.E., Palmstrøm C.J..  2018.  Materials considerations for forming the topological insulator phase in InAs/GaSb heterostructures. Phys Rev Materials. 2, 064603(https://doi.org/10.1103/PhysRevMaterials.2.064603)
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Drachmann A.C.C., Suominen H.J., Kjaergaard M., Shojaei B., Palmstrøm C.J., Marcus C.M., Nichele F..  2017.  Proximity Effect Transfer from NbTi into a Semiconductor Heterostructure via Epitaxial Aluminum. Nano Letters. 17
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Zhang H., Liu C-X, Gazibegovic S., Xu D., Logan J.A., Wang G., van Loo N., Bommer J.D.S., de Moor M.W.A., Car D. et al..  2018.  Quantized Majorana conductance. Nature. doi:10.1038/nature26142