Found 27 results
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Jong-In S, Hong W.P, Palmstrom C.J, Van Der Gaag B.P, Bae CKyung.  1993.  A f T=175 GHz carbon-doped base InP/InGaAs HBT. International Electron Devices Meeting 1993. Technical Digest (Cat. No.93CH3361-3). :787-90.
Dong J.W, Chen L.C, McKernan S., Xie J.Q, Figus M.T, James R.D, Palmstrom C.J.  2000.  Formation and characterization of single crystal Ni 2MnGa thin films. Materials for Smart Systems. Symposium (Materials Research Society Proceedings Vol.604). :297-302.
Rodwell M.JW, Singisetti U., Wistey M., Burek G.J, Carter A., Baraskar A., Law J., Thibeault B.J, Ji KEun, Shin B. et al..  2010.  III-V MOSFETs: scaling laws, scaling limits, fabrication processes. 2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM 2010). :6pp.-6pp..
Bhattacharya K., DeSimone A., Hane K.F, James R.D, Palmstrom C.J.  1999.  Tents and tunnels on martensitic films. Materials Science and Engineering a-Structural Materials Properties Microstructure and Processing. 273:685-689.