Publications

Found 84 results
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E
Garlid E.S, Hu Q.O, Chan M.K, Palmstrom C.J, Crowell P.A.  2010.  Electrical Measurement of the Direct Spin Hall Effect in Fe/InxGa1-xAs Heterostructures. Physical Review Letters. 105
Garlid E.S, Hu Q.O, Geppert C., Chan M.K, Palmstrom C.J, Crowell P.A.  2011.  Electrical measurement of the spin Hall effects in Fe/In xGa 1-xAs heterostructures. 2011 69th Annual Device Research Conference (DRC). :155-8.
Ohno K, F. Heremans J, Bassett LC, Myers BA, Toyli DM, Jayich ACBleszyn, Palmstrom CJ, Awschalom DD.  2012.  Engineering shallow spins in diamond with nitrogen delta-doping. Applied Physics Letters. 101
Kawasaki JK, Neulinger T, Timm R, Hjort M, Zakharov AA, Mikkelsen A, Schultz BD, Palmstrom CJ.  2013.  Epitaxial growth and surface studies of the Half Heusler compound NiTiSn (001). Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 31:04D106.
Cheeks T.L, Sands T., Nahory R.E, Harbison J.P, Palmstrom C.J, Gilchrist H.L, Ramesh R., Keramidas V.G.  1990.  EPITAXIAL METAL-III-V SEMICONDUCTOR DOUBLE HETEROSTRUCTURE SCHOTTKY DIODES - CHARACTERIZATION AND NOVEL DEVICE POTENTIAL. Journal of Electronic Materials. 19:40-40.
Sands T., Harbison J.P, Chan W.K, Schwarz S.A, Chang C.C, Palmstrom C.J, Keramidas V.G.  1988.  EPITAXIAL-GROWTH OF GAAS/NIAL/GAAS HETEROSTRUCTURES. Applied Physics Letters. 52:1216-1218.
Allen S.J, Tabatabaie N., Palmstrom C.J, Hull G.W, Sands T., Derosa F., Gilchrist H.L, Garrison K.C.  1989.  ERAS EPITAXIAL LAYERS BURIED IN GAAS - MAGNETOTRANSPORT AND SPIN-DISORDER SCATTERING. Physical Review Letters. 62:2309-2312.
Bogaerts R., Herlach F., Dekeyser A., Peeters F.M, Derosa F., Palmstrom C.J, Brehmer D., Allen S.J.  1996.  Experimental determination of the Fermi surface of thin Sc1-xErxAs epitaxial layers in pulsed magnetic fields. Physical Review B. 53:15951-15963.
Bogaerts R., Vanesch A., Vanbockstal L., Herlach F., Peeters F.M, Derosa F., Palmstrom C.J, Allen S.J.  1993.  EXPERIMENTAL-STUDY OF THE ENERGY-BAND STRUCTURE OF SC1-XERXAS LAYERS IN PULSED MAGNETIC-FIELDS. Physica B. 184:232-235.
F
Jong-In S, Hong W.P, Palmstrom C.J, Van Der Gaag B.P, Bae CKyung.  1993.  A f T=175 GHz carbon-doped base InP/InGaAs HBT. International Electron Devices Meeting 1993. Technical Digest (Cat. No.93CH3361-3). :787-90.

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