Publications

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Preu S., Lu H., Kawasaki J.K., Ouellette D.G., Palmstrom C.J., Sherwin M.S., Gossard A.C..  2014.  THz spectroscopy of self-assembled ErSb nanowire. Conference on Lasers and Electro-Optics (CLEO) - Laser Science to Photonic Applications.
Krafcsik I., Palmstrom C.J, Gyulai J., Colgan E., Zingu E., Mayer J.W.  1983.  THIN-FILM INTERACTIONS OF AL AND AL (CU) ON W AND TI. Journal of the Electrochemical Society. 130:C102-C102.
Clinger LE, Pernot G, Buehl TE, Burke PG, Gossard AC, Palmstrom CJ, Shakouri A, Zide JMO.  2012.  Thermoelectric properties of epitaxial TbAs:InGaAs nanocomposites. Journal of Applied Physics. 111
Rodwell M., Wistey M., Singisetti U., Burek G., Gossard A., Stemmer S., Engel-Herbert R., Hwang Y., Zheng Y., Van de Walle C. et al..  2008.  Technology development & design for 22 nm InGaAs/InP-channel MOSFETs. 2008 IEEE 20th International Conference on Indium Phosphide & Related Materials (IPRM). :6pp.-6pp..
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Kawasaki JK, Schultz BD, Lu H, Gossard AC, Palmstrøm CJ.  2013.  Surface-Mediated Tunable Self-Assembly of Single Crystal Semimetallic ErSb/GaSb Nanocomposite Structures. Nano Letters. 13(6)
Fitzsimmons M.R, Kirby B.J, Hengartner N.W, Trouw F., Erickson M.J, Flexner S.D, Kondo T., Adelmann C., Palmstrom C.J, Crowell P.A et al..  2007.  Suppression of nuclear polarization near the surface of optically pumped GaAs. Physical Review B. 76
Kramer D.E, Chen L.C, Palmstrom C.J, Gerberich W.W.  1998.  Substrate effects on yield point phenomena in epitaxial thin films. Fundamentals of Nanondentation and Nanotribology. Symposium. :89-94.
Peterson T.A., Patel S.J., Geppert C.C., Christie K.D., Rath A., Pennachio D., Flatté M.E., Voyles P.M., Palmstrøm C.J., Crowell P.A.  2016.  Spin injection and detection up to room temperature in Heusler alloy/n-GaAs spin valves. Phys. Rev. B 94, 235309.
Hu Q.O, Garlid E.S, Crowell P.A, Palmstrom C.J.  2011.  Spin accumulation near Fe/GaAs (001) interfaces: The role of semiconductor band structure. Physical Review B. 84
Palmstrom C.J, Galvin G.J.  1985.  SOLID-PHASE EPITAXY OF DEPOSITED AMORPHOUS-GE ON GAAS. Applied Physics Letters. 47:815-817.
Palmstrom C.J, Galvin G.J, Schwarz S.A, De Cooman B.C, Mayer J.W.  1986.  Solid phase epitaxial growth of Ge on GaAs. Layered Structures and Epitaxy Symposium. :67-72.
Kadow C., Fleischer S.B, Ibbetson J.P, Bowers J.E, Gossard A.C, Dong J.W, Palmstrom C.J.  1999.  Self-assembled ErAs islands in GaAs: Growth and subpicosecond carrier dynamics. Applied Physics Letters. 75:3548-3550.

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