Publications

Found 66 results
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E
Yang Y.N, Luo Y.S, Weaver J.H, Florez L.T, Palmstrom C.J.  1992.  EFFECTS OF ANNEALING ON THE SURFACE-MORPHOLOGY OF DECAPPED GAAS(001). Applied Physics Letters. 61:1930-1932.
Lou X., Adelmann C., Furis M., Crooker S.A, Palmstrom C.J, Crowell P.A.  2006.  Electrical detection of spin accumulation at a ferromagnet-semiconductor interface. Physical Review Letters. 96
Lou X, Adelmann C, Crooker SA, Garlid ES, Zhang J, Reddy K.SMadhuka, Flexner SD, Palmstrom CJ, Crowell PA.  2007.  Electrical detection of spin transport in lateral ferromagnet-semiconductor devices. Nature Physics. 3:197-202.
Fowler D.E, Gyulai J., Palmstrom C..  1983.  ELECTRON INELASTIC MEAN FREE-PATH (IMFP) IN SINGLE-CRYSTAL BEO BY RUTHERFORD BACKSCATTERING (RBS) AND AUGER-ELECTRON SPECTROSCOPY (AES). Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films. 1:1021-1025.
Palmstrom C.J, Fimland B.O, Sands T., Garrison K.C, Bartynski R.A.  1989.  EPITAXIAL COGA AND TEXTURED COAS CONTACTS ON GA1-XALXAS FABRICATED BY MOLECULAR-BEAM EPITAXY. Journal of Applied Physics. 65:4753-4758.
Schultz B.D, Farrell H.H, Evans M.MR, Ludge K., Palmstrom C.J.  2002.  ErAs interlayers for limiting interfacial reactions in Fe/GaAs(100) heterostructures. Journal of Vacuum Science & Technology B. 20:1600-1608.
Eid K.F, Stone M.B, Maksimov O., Shih T.C, Ku K.C, Fadgen W., Palmstrom C.J, Schiffer P., Samarth N..  2005.  Exchange biasing of the ferrornagnetic semiconductor (Ga,Mn)As by MnO (invited). Journal of Applied Physics. 97
F
Palmstrom C.J, Garrison K.C, Fimland B.O, Sands T., Bartynski R.A.  1989.  Fabrication and electrical properties of MBE grown metal-gallium and metal-arsenic compounds on Ga 1-xAl xAs. Advances in Materials, Processing and Devices in III-V Compound Semiconductors Symposium. :583-8.
Dong J.W, Chen L.C, McKernan S., Xie J.Q, Figus M.T, James R.D, Palmstrom C.J.  2000.  Formation and characterization of single crystal Ni 2MnGa thin films. Materials for Smart Systems. Symposium (Materials Research Society Proceedings Vol.604). :297-302.

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