Publications

Found 88 results
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B
Wuyts K., Watte J., Silverans R.E, Vanhove M., Borghs G., Palmstrom C.J, Florez L.T, Munder H..  1994.  BACK SIDE RAMAN MEASUREMENTS ON GE/PD/N-GAAS OHMIC CONTACT STRUCTURES. Applied Physics Letters. 64:2406-2408.
Schwarz S.A, Palmstrom C.J, Bhat R., Koza M., Wang L.C, Park M.H.  1995.  Backside SIMS study of Ge/Pd non-alloyed ohmic contacts on InGaAs. Beam-Solid Interactions for Materials Synthesis and Characterization. Symposium. :471-6.
E
Kim J., Kim H., M. Kilic E, Gayner C., Koltun R., Park H., Soon A., Bowers J., Palmstrøm C., Kim W..  2018.  Effect of phonon confinement on the thermal conductivity of In0.53Ga0.47As nanofilms. Journal of Applied Physics. 123, 245103(https://doi.org/10.1063/1.5030178)
Liu C., Boyko Y., Geppert C.C, Christie K.D, Stecklein G., Patel S.J, Palmstrøm C.J, Crowell P.A.  2014.  Electrical detection of ferromagnetic resonance in ferromagnet/n-GaAs heterostructures by tunneling anisotropic magnetoresistance. Applied Physics Letters. 105
Komesu T., Jeong H.K, Choi J., Borca C.N, Dowben P.A, Petukhov A.G, Schultz B.D, Palmstrom C.J.  2003.  Electronic structure of ErAs(100). Physical Review B. 67
Buehl TE, Palmstrom CJ, Gossard AC.  2011.  Embedded ErAs nanorods on GaAs(n11) substrates by molecular beam epitaxy. Journal of Vacuum Science & Technology B. 29
Ohno K, F. Heremans J, Bassett LC, Myers BA, Toyli DM, Jayich ACBleszyn, Palmstrom CJ, Awschalom DD.  2012.  Engineering shallow spins in diamond with nitrogen delta-doping. Applied Physics Letters. 101
Palmstrom C.J, Fimland B.O, Sands T., Garrison K.C, Bartynski R.A.  1989.  EPITAXIAL COGA AND TEXTURED COAS CONTACTS ON GA1-XALXAS FABRICATED BY MOLECULAR-BEAM EPITAXY. Journal of Applied Physics. 65:4753-4758.
Chen L.C, Dong J.W, Schultz B.D, Palmstrom C.J, Berezovsky J., Isakovic A., Crowell P.A, Tabat N..  2000.  Epitaxial ferromagnetic metal/GaAs(100) heterostructures. Journal of Vacuum Science & Technology B. 18:2057-2062.
Brown-Heft T.L., Logan J.A., McFadden A.P, Guillemard C., Le Fèvre P., Betran F., Andrieu S., Palmstrøm C.J..  2018.  Epitaxial Heusler superlattice Co2MnAl/Fe2MnAl with perpendicular magnetic anisotropy and termination-dependent half-metallicity. Phys Rev Materials. 2, 034402
Brown-Heft T.L., Logan J.A., McFadden A.P, Guillemard C., Le Fèvre P., Betran F., Andrieu S., Palmstrøm C.J..  2018.  Epitaxial Heusler superlattice Co2MnAl/Fe2MnAl with perpendicular magnetic anisotropy and termination-dependent half-metallicity. Phys Rev Materials. 2, 034402
Gazibegovic S., Car D., Zhang H., Balk S.C., Logan J.A., de Moor M.W.A., Cassidy M.C., Schmits R., Xu D., Wang G.Z. et al..  2017.  Epitaxy of advanced nanowire quantum devices. Nature. 548, 434
Gazibegovic S., Car D., Zhang H., Balk S.C., Logan J.A., de Moor M.W.A., Cassidy M.C., Schmits R., Xu D., Wang G.Z. et al..  2017.  Epitaxy of advanced nanowire quantum devices. Nature. 548, 434
Gazibegovic S., Car D., Zhang H., Balk S.C., Logan J.A., de Moor M.W.A., Cassidy M.C., Schmits R., Xu D., Wang G.Z. et al..  2017.  Epitaxy of advanced nanowire quantum devices. Nature. 548, 434
Matsuo S., Ueda K., Baba S., Kamata H., Tateno M., Shabani J., Palmstrøm C.J., Tarucha S..  2018.  Equal-Spin Andreev Reflection on Junctions of Spin-Resolved Quantum Hall Bulk State and Spin-Singlet Superconductor. Scientific Reports. 8, 3454
Bogaerts R., Herlach F., Dekeyser A., Peeters F.M, Derosa F., Palmstrom C.J, Brehmer D., Allen S.J.  1996.  Experimental determination of the Fermi surface of thin Sc1-xErxAs epitaxial layers in pulsed magnetic fields. Physical Review B. 53:15951-15963.
Bogaerts R., Herlach F., Dekeyser A., Peeters F.M, Derosa F., Palmstrom C.J, Brehmer D., Allen S.J.  1996.  Experimental determination of the Fermi surface of thin Sc1-xErxAs epitaxial layers in pulsed magnetic fields. Physical Review B. 53:15951-15963.
Bogaerts R., Vanesch A., Vanbockstal L., Herlach F., Peeters F.M, Derosa F., Palmstrom C.J, Allen S.J.  1993.  EXPERIMENTAL-STUDY OF THE ENERGY-BAND STRUCTURE OF SC1-XERXAS LAYERS IN PULSED MAGNETIC-FIELDS. Physica B. 184:232-235.
F
Jong-In S, Hong W.P, Palmstrom C.J, Van Der Gaag B.P, Bae CKyung.  1993.  A f T=175 GHz carbon-doped base InP/InGaAs HBT. International Electron Devices Meeting 1993. Technical Digest (Cat. No.93CH3361-3). :787-90.

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