Publications

Found 276 results
[ Author(Desc)] Title Type Year
A B C D E F G H I J K L M N O P Q R S T U V W X Y Z 
A
Adelmann C., Lou X., Strand J., Palmstrom C.J, Crowell P.A.  2005.  Spin injection and relaxation in ferromagnet-semiconductor heterostructures. Physical Review B. 71
Adelmann C., Hilton J.L, Schultz B.D, McKernan S., Palmstrom C.J, Lou X., Chiang H.S, Crowell P.A.  2006.  Spin injection from perpendicular magnetized ferromagnetic delta-MnGa into (Al,Ga)As heterostructures. Applied Physics Letters. 89
Adelmann C., Xie J.Q, Palmstrom C.J, Strand J., Lou X., Wang J., Crowell P.A.  2005.  Effects of doping profile and post-growth annealing on spin injection from Fe into (AI,Ga)As heterostructures. Journal of Vacuum Science & Technology B. 23:1747-1751.
Adelmann C., Schultz B.D, Dong X.Y, Palmstrom C.J, Lou X., Strand J., Xie J.Q, Park S., Fitzsimmons M.R, Crowell P.A.  2004.  Spin injection into semiconductors: the role of the Fe/Al x Ga 1-xAs interface. 2004 International Conference on Indium Phosphide and Related Materials. 16th IPRM (IEEE Cat. No.04CH37589). :505-10.
Allen S.J, Derosa F., Gilchrist H.L, Harbison J.P, Leadbeater M., Miceli P.F, Palmstrom C.J, Ramesh R., Sands T., Zrenner A..  1991.  MAGNETOTRANSPORT IN MAGNETIC EPITAXIAL METAL LAYERS BURIED IN (GA,AL)AS HETEROSTRUCTURES. Journal of Applied Physics. 69:6117-6117.
Allen S.J, Brehmer D., Palmstrom C.J.  1993.  Novel electronics enabled by rare earth arsenides buried in III-V semiconductors. Rare Earth Doped Semiconductors Symposium. :307-17.
Allen S.J, Tabatabaie N., Palmstrom C.J, Mounier S., Hull G.W, Sands T., Derosa F., Gilchrist H.L, Garrison K.C.  1990.  MAGNETOTRANSPORT IN ULTRATHIN ERAS EPITAXIAL LAYERS BURIED IN GAAS. Surface Science. 228:13-15.
Allen S.J, Tabatabaie N., Palmstrom C.J, Hull G.W, Sands T., Derosa F., Gilchrist H.L, Garrison K.C.  1989.  ERAS EPITAXIAL LAYERS BURIED IN GAAS - MAGNETOTRANSPORT AND SPIN-DISORDER SCATTERING. Physical Review Letters. 62:2309-2312.
Allen S.J, Derosa F., Palmstrom C.J, Zrenner A..  1991.  BAND-STRUCTURE, QUANTUM CONFINEMENT, AND EXCHANGE SPLITTING IN SC1-XERXAS EPITAXIAL LAYERS BURIED IN GAAS. Physical Review B. 43:9599-9609.
B
Bhat R., Koza M.A, BRASIL MJSP, Nahory R.E, Palmstrom C.J, Wilkens B.J.  1992.  INTERFACE CONTROL IN GAAS/GAINP SUPERLATTICES GROWN BY OMCVD. Journal of Crystal Growth. 124:576-582.
Bhattacharya K., DeSimone A., Hane K.F, James R.D, Palmstrom C.J.  1999.  Tents and tunnels on martensitic films. Materials Science and Engineering a-Structural Materials Properties Microstructure and Processing. 273:685-689.
Bogaerts R., Vanbockstal L., Herlach F., Peeters F.M, Derosa F., Palmstrom C.J, Allen S.J.  1992.  MAGNETOTRANSPORT MEASUREMENTS ON THIN SC1-XERXAS EPITAXIAL-FILMS IN PULSED MAGNETIC-FIELDS. Physica B. 177:425-429.
Bogaerts R., Herlach F., Dekeyser A., Peeters F.M, Derosa F., Palmstrom C.J, Brehmer D., Allen S.J.  1996.  Experimental determination of the Fermi surface of thin Sc1-xErxAs epitaxial layers in pulsed magnetic fields. Physical Review B. 53:15951-15963.
Bogaerts R., Dekeyser A., Herlach F., Peeters F.M, Derosa F., Palmstrom C.J, Brehmer D., Allen S.J.  1994.  SIZE EFFECTS IN THE TRANSPORT-PROPERTIES OF THIN SC(1-X)ER(X)AS EPITAXIAL LAYERS BURIED IN GAAS. Solid-State Electronics. 37:789-792.
Bogaerts R., De Keyser A., Herlach F., Peeters F.M, Derosa F., Palmstrom C.J, Brehmer D., Allen, Jr. S.J.  1995.  Quantum oscillations in the Hall effect of thin Sc 1-xEr xAs epitaxial layers buried in GaAs. 11th International Conference, High Magnetic Fields in the Physics of Semiconductors. :706-9.
Bogaerts R., Vanesch A., Vanbockstal L., Herlach F., Peeters F.M, Derosa F., Palmstrom C.J, Allen S.J.  1993.  EXPERIMENTAL-STUDY OF THE ENERGY-BAND STRUCTURE OF SC1-XERXAS LAYERS IN PULSED MAGNETIC-FIELDS. Physica B. 184:232-235.
Brat T., Eizenberg M., Fastow R., Palmstrom C.J, Mayer J.W.  1985.  PULSED PROTON-BEAM ANNEALING OF IR AND IRXV100-X THIN-FILMS ON SILICON. Journal of Applied Physics. 57:264-269.
Brehmer D.E, Zhang K., Schwarz C.J, Chau S.P, Allen S.J, Ibbetson J.P, Zhang J.P, Petukhov A.G, Palmstrom C.J, Wilkens B..  1996.  Resonant tunneling through rare earth arsenide, semimetal quantum wells. Solid-State Electronics. 40:241-244.
Brehmer D.E, Zhang K., Schwarz C.J, Chau S.P, Allen S.J, Ibbetson J.P, Zhang J.P, Palmstrom C.J, Wilkens B..  1995.  RESONANT-TUNNELING THROUGH ERAS SEMIMETAL QUANTUM-WELLS. Applied Physics Letters. 67:1268-1270.
Brehmer D.E, Ibbetson J.P, Kai Z, Petukhov A.G, Schwarz C.J, Chau S.P, Allen S.J, Palmstrom C.J, Zhang J.P, Wilkens B..  1995.  Resonant tunneling through (Al,Ga)As/ErAs/(Al,Ga)As, semi-metal quantum wells. Semiconductor Heteroepitaxy. Growth, Characterization and Device Applications. :672-5.
Buehl TE, Palmstrom CJ, Gossard AC.  2011.  Embedded ErAs nanorods on GaAs(n11) substrates by molecular beam epitaxy. Journal of Vacuum Science & Technology B. 29
Buehl TE, LeBeau JM, Stemmer S, Scarpulla MA, Palmstrom CJ, Gossard AC.  2010.  Growth of embedded ErAs nanorods on (411)A and (411)B GaAs by molecular beam epitaxy. Journal of Crystal Growth. 312:2089-2092.
Burke PG, Buehl TE, Gilles P, Lu H, Shakouri A, Palmstrom CJ, Bowers JE, Gossard AC.  2012.  Controlling n-Type Carrier Density from Er Doping of InGaAs with MBE Growth Temperature. Journal of Electronic Materials. 41:948-953.
Buschbeck J., Kawasaki J.K, Kozhanov A., James R.D, Palmstrom C.J.  2011.  Martensite transformation of epitaxial Ni-Ti films. Applied Physics Letters. 98
Buschbeck J., Kawasaki J.K, Buehl T.E, Gossard A.C, Palmstrom C.J.  2011.  Growth of epitaxial NiTi shape memory alloy films on GaAs(001) and evidence of martensitic transformation. Journal of Vacuum Science & Technology B. 29

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