Publications

Found 35 results
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Sands T., Harbison J.P, Chan W.K, Schwarz S.A, Chang C.C, Palmstrom C.J, Keramidas V.G.  1988.  EPITAXIAL-GROWTH OF GAAS/NIAL/GAAS HETEROSTRUCTURES. Applied Physics Letters. 52:1216-1218.
Sands T., Palmstrom C.J, Harbison J.P, Keramidas V.G, Tabatabaie N., Cheeks T.L, Ramesh R., Silberberg Y..  1990.  Stable and epitaxial metal/III-V semiconductor heterostructures. Material Science Reports. 5:99-170.
Sands T., Harbison J.P, Schwarz S.A, Palmstrom C.J, Tabatabaie N., Chan W.K, Keramidas V.G.  1988.  STRUCTURE AND STABILITY OF ULTRATHIN NIAL FILMS IN (AL,GA)AS/NIAL/(AL,GA)AS HETEROSTRUCTURES. Journal of Electronic Materials. 17:S23-S23.
Sands T., Harbison J.P, Ramesh R., Palmstrom C.J, Florez L.T, Keramidas V.G.  1990.  INTERFACE CRYSTALLOGRAPHY AND STABILITY IN EPITAXIAL METAL (NIAL, COAL)/III-V SEMICONDUCTOR HETEROSTRUCTURES. Materials Science and Engineering B-Solid State Materials for Advanced Technology. 6:147-157.
Sands T., Harbison J.P, Palmstrom C.J, Ramesh R., Keramidas V.G.  1991.  A template approach to metal/III-V semiconductor epitaxy. Heteroepitaxy of Dissimilar Materials Symposium. :271-82.
Schmidt D.R, Ibbetson J.P, Brehmer D.E, Palmstrom C.J, Allen S.J.  1997.  Giant magnetoresistance of self-assembled ErAs islands in GaAs. Magnetic Ultrathin Films, Multilayers and Surfaces - 1997 Symposium. :251-6.
Schultz B.D, Farrell H.H, Evans M.MR, Ludge K., Palmstrom C.J.  2002.  ErAs interlayers for limiting interfacial reactions in Fe/GaAs(100) heterostructures. Journal of Vacuum Science & Technology B. 20:1600-1608.
Schultz B.D, Choi S.G, Palmstrom C.J.  2006.  Embedded growth mode of thermodynamically stable metallic nanoparticles on III-V semiconductors. Applied Physics Letters. 88
Schultz B.D, Adelmann C., Dong X.Y, McKernan S., Palmstrom C.J.  2008.  Phase formation in the thin film Fe/GaAs system. Applied Physics Letters. 92
Schultz B.D, Palmstrom C.J.  2006.  Embedded assembly mechanism of stable metal nanocrystals on semiconductor surfaces. Physical Review B. 73
Schultz B.D, Adelmann C., Dong X.Y, McKernan S., Palmstrom C.J.  2008.  Phase formation in the thin film Fe/GaAs system. Applied Physics Letters. 92:091914-1-3.
Schultz B.D, Marom N., Naveh D., Lou X., Adelmann C., Strand J., Crowell P.A, Kronik L., Palmstrom C.J.  2009.  Spin injection across the Fe/GaAs interface: Role of interfacial ordering. Physical Review B. 80
Schwarz S.A, Palmstrom C.J, Schwartz C.L, Sands T., Shantharama L.G, Harbison J.P, Florez L.T, Marshall E.D, Han C.C, Lau S.S et al..  1990.  BACKSIDE SECONDARY ION MASS-SPECTROMETRY INVESTIGATION OF OHMIC AND SCHOTTKY CONTACTS ON GAAS. Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films. 8:2079-2083.
Schwarz S.A, Palmstrom C.J, Bhat R., Koza M., Wang L.C, Park M.H.  1995.  Backside SIMS study of Ge/Pd non-alloyed ohmic contacts on InGaAs. Beam-Solid Interactions for Materials Synthesis and Characterization. Symposium. :471-6.
Schwarz S.A, Mei P., Hwang D.M, Schwartz C.L, Venkatesan T., Palmstrom C.J, Stoffel N.G, Bhat R..  1989.  Studies of In 0.53Ga 0.47As/InP superlattice mixing and conversion. Advances in Materials, Processing and Devices in III-V Compound Semiconductors Symposium. :233-8.
Shabani J., DasSarma S., Palmstrøm C.J.  2014.  An apparent metal-insulator transition in high-mobility two-dimensional InAs heterostructures. Phys. Rev. B. 90, 161303 (2014).
Shabani J., Kjaergaard M., Suominen H.J., Kim Y., Nichele F., Pakrouski K., Stankevic T., Lutchyn R.M., Krogstrup P., Feidenhans R. et al..  2016.  Two-dimensional epitaxial superconductor-semiconductor heterostructures: A platform for topological superconducting networks. Phys Rev B . 93, 155402
Shabani J., McFadden A.P, Shojaei B., Palmstrøm C.J.  2014.  Gating of high-mobility InAs metamorphic heterostructures. Appl. Phys. Lett. 105
Shih T.C, Xie J.Q, Dong J.W, Dong X.Y, Srivastava S., Adelmann C., McKernan S., James R.D, Palmstrom C.J.  2006.  Epitaxial growth and characterization of single crystal ferromagnetic shape memory Co2NiGa films. Ferroelectrics. 342:35-+.
Shojaei B., O'Malley P.JJ, Shabani J., Roushan P., Schultz B.D, Lutchyn R.M., Nayak C., Martinis J.M., Palmstrom C.J.  2016.  Demonstration of gate control of spin splitting in a high-mobility InAs/AlSb two-dimensional electron gas. Physical Review B. 93, 075302
Shojaei B., McFadden A.P., Pendharkar M., Lee J.S., Flatté M.E., Palmstrøm C.J..  2018.  Materials considerations for forming the topological insulator phase in InAs/GaSb heterostructures. Phys Rev Materials. 2, 064603(https://doi.org/10.1103/PhysRevMaterials.2.064603)
Shojaei B., McFadden A., Shabani J., Schultz B.D, Palmstrøm C.J.  2015.  Studies of scattering mechanisms in gate tunable InAs/(Al,Ga)Sb two dimensional electron gases. Appl. Phys. Lett.. 106, 222101
Song J.I, Hong W.P, Palmstrom C.J, Hayes J.R, Chough K.B, Vandergaag B.P.  1993.  MICROWAVE CHARACTERISTICS OF A CARBON-DOPED BASE INP/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTOR GROWN BY CHEMICAL BEAM EPITAXY. Electronics Letters. 29:1893-1894.
Song J.I, Hong B.WP, Palmstrom C.J, Vandergaag B.P, Chough K.B.  1994.  ULTRA-HIGH-SPEED INP/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS. Ieee Electron Device Letters. 15:94-96.
Song J.I, Hong B.WP, Palmstrom C.J, Chough K.B.  1994.  InP based carbon-doped base HBT technology: its recent advances and circuit applications. Conference Proceedings. Sixth International Conference on Indium Phosphide and Related Materials (Cat. No.94CH3369-6). :523-6.

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