Publications

Found 35 results
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Suominen H.J., Kjaergaard M., Hamilton A.R., Shabani J., Palmstrøm C.J., Marcus C.M., Nichele F..  2017.  Zero-energy modes from coalescing Andreev states in a two-dimensional semiconductor-superconductor hybrid platform. Physical Review Letters. 119, 176805
Suominen H.J., Danon J., Kjaergaard M., Flensberg K., Shabani J., Palmstrøm C.J., Nichele F., Marcus C.M..  2017.  Anomalous Fraunhofer Interference in Epitaxial Superconductor-Semiconductor Josephson Junctions. Phys Rev B. 95, 035307
Strand J., Schultz B.D, Isakovic A.F, Palmstrom C.J, Crowell P.A.  2003.  Dynamic nuclear polarization by electrical spin injection in ferromagnet-semiconductor heterostructures. Physical Review Letters. 91
Strand J., Lou X., Adelmann C., Schultz B.D, Isakovic A.F, Palmstrom C.J, Crowell P.A.  2005.  Electron spin dynamics and hyperfine interactions in Fe/Al0.1Ga0.9As/GaAs spin injection heterostructures. Physical Review B. 72
Strand J., Isakovic A.F, Lou X., Crowell P.A, Schultz B.D, Palmstrom C.J.  2003.  Nuclear magnetic resonance in a ferromagnet-semiconductor heterostructure. Applied Physics Letters. 83:3335-3337.
Stoffel N.G, Palmstrom C.J, Wilkens B.J.  1991.  ION CHANNELING MEASUREMENT OF THE LATTICE REGISTRY OF ULTRATHIN ERAS LAYERS IN GAAS/ERAS/GAAS (001) HETEROSTRUCTURES. Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms. 56-7:792-794.
Stanley C.R, Welch D., Wicks G.W, Wood C.EC, Palmstrom C., Pollack F.H, Parayanthal P..  1983.  (Al xGa 1-x) 0.47In 0.53As; growth and characterization. Gallium Arsenide and Related Compounds, 1982. Tenth International Symposium on Gallium Arsenide and Related Compounds. :173-80.
Stanley C.R, Welch D., Wicks G.W, Wood C.EC, Palmstrom C., Pollack F.H, Parayanthal P..  1983.  (ALXGA1-X)0.47IN0.53AS - GROWTH AND CHARACTERIZATION. Institute of Physics Conference Series. :173-180.
Song J.I, Hong B.WP, Palmstrom C.J, Vandergaag B.P, Chough K.B.  1994.  ULTRA-HIGH-SPEED INP/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS. Ieee Electron Device Letters. 15:94-96.
Song J.I, Hong B.WP, Palmstrom C.J, Chough K.B.  1994.  InP based carbon-doped base HBT technology: its recent advances and circuit applications. Conference Proceedings. Sixth International Conference on Indium Phosphide and Related Materials (Cat. No.94CH3369-6). :523-6.
Song J.I, Palmstrom C.J, Vandergaag B.P, Hong W.P, Hayes J.R, Chough K.B.  1993.  HIGH-PERFORMANCE INP/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH HIGHLY CARBON-DOPED BASE GROWN BY CHEMICAL BEAM EPITAXY. Electronics Letters. 29:666-667.
Song J.I, Hong W.P, Palmstrom C.J, Vandergaag B.P, Chough K.B.  1994.  MILLIMETER-WAVE INP/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH A SUBPICOSECOND EXTRINSIC DELAY-TIME. Electronics Letters. 30:456-457.
Song J.I, Hong W.P, Palmstrom C.J, Hayes J.R, Chough K.B, Vandergaag B.P.  1993.  MICROWAVE CHARACTERISTICS OF A CARBON-DOPED BASE INP/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTOR GROWN BY CHEMICAL BEAM EPITAXY. Electronics Letters. 29:1893-1894.
Shojaei B., O'Malley P.JJ, Shabani J., Roushan P., Schultz B.D, Lutchyn R.M., Nayak C., Martinis J.M., Palmstrom C.J.  2016.  Demonstration of gate control of spin splitting in a high-mobility InAs/AlSb two-dimensional electron gas. Physical Review B. 93, 075302
Shojaei B., McFadden A.P., Pendharkar M., Lee J.S., Flatté M.E., Palmstrøm C.J..  2018.  Materials considerations for forming the topological insulator phase in InAs/GaSb heterostructures. Phys Rev Materials. 2, 064603(https://doi.org/10.1103/PhysRevMaterials.2.064603)
Shojaei B., McFadden A., Shabani J., Schultz B.D, Palmstrøm C.J.  2015.  Studies of scattering mechanisms in gate tunable InAs/(Al,Ga)Sb two dimensional electron gases. Appl. Phys. Lett.. 106, 222101
Shih T.C, Xie J.Q, Dong J.W, Dong X.Y, Srivastava S., Adelmann C., McKernan S., James R.D, Palmstrom C.J.  2006.  Epitaxial growth and characterization of single crystal ferromagnetic shape memory Co2NiGa films. Ferroelectrics. 342:35-+.
Shabani J., McFadden A.P, Shojaei B., Palmstrøm C.J.  2014.  Gating of high-mobility InAs metamorphic heterostructures. Appl. Phys. Lett. 105
Shabani J., DasSarma S., Palmstrøm C.J.  2014.  An apparent metal-insulator transition in high-mobility two-dimensional InAs heterostructures. Phys. Rev. B. 90, 161303 (2014).
Shabani J., Kjaergaard M., Suominen H.J., Kim Y., Nichele F., Pakrouski K., Stankevic T., Lutchyn R.M., Krogstrup P., Feidenhans R. et al..  2016.  Two-dimensional epitaxial superconductor-semiconductor heterostructures: A platform for topological superconducting networks. Phys Rev B . 93, 155402
Schwarz S.A, Mei P., Hwang D.M, Schwartz C.L, Venkatesan T., Palmstrom C.J, Stoffel N.G, Bhat R..  1989.  Studies of In 0.53Ga 0.47As/InP superlattice mixing and conversion. Advances in Materials, Processing and Devices in III-V Compound Semiconductors Symposium. :233-8.
Schwarz S.A, Palmstrom C.J, Schwartz C.L, Sands T., Shantharama L.G, Harbison J.P, Florez L.T, Marshall E.D, Han C.C, Lau S.S et al..  1990.  BACKSIDE SECONDARY ION MASS-SPECTROMETRY INVESTIGATION OF OHMIC AND SCHOTTKY CONTACTS ON GAAS. Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films. 8:2079-2083.
Schwarz S.A, Palmstrom C.J, Bhat R., Koza M., Wang L.C, Park M.H.  1995.  Backside SIMS study of Ge/Pd non-alloyed ohmic contacts on InGaAs. Beam-Solid Interactions for Materials Synthesis and Characterization. Symposium. :471-6.
Schultz B.D, Choi S.G, Palmstrom C.J.  2006.  Embedded growth mode of thermodynamically stable metallic nanoparticles on III-V semiconductors. Applied Physics Letters. 88
Schultz B.D, Adelmann C., Dong X.Y, McKernan S., Palmstrom C.J.  2008.  Phase formation in the thin film Fe/GaAs system. Applied Physics Letters. 92

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