Publications

Found 46 results
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Palmstrom C.J, Fastow R..  1983.  Pulsed ion beam interface melting of PtCr and CrTa alloys on Si structures. Laser-Solid Interactions and Transient Thermal Processing of Materials. :715-20.
Palmstrom C.J, Mayer J.W, Cunningham B., Campbell D.R, Totta P.A.  1985.  THIN-FILM INTERACTIONS OF AL AND AL(CU) ON TIW. Journal of Applied Physics. 58:3444-3448.
Palmstrom C.J, Vandergaag B.P, Song J.I, Hong W.P, Schwarz S.A, Novak S..  1994.  GROWTH OF HEAVY CARBON-DOPED GALNAS LATTICE-MATCHED TO INP BY CHEMICAL BEAM EPITAXY. Applied Physics Letters. 64:3139-3141.
Palmstrom C.J, Chase E.W, Harbison J.P, Chang C.C, Kaplan A.S, Hwang D.M.  1987.  CO CONTACTS TO GAAS AND GA1-XALXAS - REACTIONS AND ELECTRICAL-PROPERTIES. Journal of the Electrochemical Society. 134:C116-C117.
Palmstrom C.J, Garrison K.C, Fimland B.O, Sands T., Bartynski R.A.  1989.  Fabrication and electrical properties of MBE grown metal-gallium and metal-arsenic compounds on Ga 1-xAl xAs. Advances in Materials, Processing and Devices in III-V Compound Semiconductors Symposium. :583-8.
Palmstrom C.J, Mounier S., Finstad T.G, Miceli P.F.  1990.  LATTICE-MATCHED SC1-XERXAS/GAAS HETEROSTRUCTURES - A DEMONSTRATION OF NEW SYSTEMS FOR FABRICATING LATTICE-MATCHED METALLIC COMPOUNDS TO SEMICONDUCTORS. Applied Physics Letters. 56:382-384.
Palmstrom C..  2003.  Epitaxial Heusler alloys: New materials for semiconductor spintronics. Mrs Bulletin. 28:725-728.
Palmstrom C.J, Choi S.G, Schultz B.D, Wang Y.Q.  2007.  Molecular beam epitaxy of Sc xEr 1-xSb on InAs(100). Journal of Crystal Growth. 303:433-7.
Palmstrom C.J, Kavanagh K.L, Hollis M.J, Mukherjee S.D, Mayer J.W.  1985.  Improved uniformity of reacted GaAs contacts by interface mixing. Layered Structures, Epitaxy, and Interfaces Symposium. :473-8.
Palmstrom C.J, Tabatabaie N., Allen S.J.  1988.  EPITAXIAL-GROWTH OF ERAS ON (100)GAAS. Applied Physics Letters. 53:2608-2610.
Palmstrom C.J, Chang C.C, Yu A., Galvin G.J, Mayer J.W.  1987.  CO/GAAS INTERFACIAL REACTIONS. Journal of Applied Physics. 62:3755-3762.
Palmstrom C.J, Galvin G.J, Schwarz S.A, De Cooman B.C, Mayer J.W.  1986.  Solid phase epitaxial growth of Ge on GaAs. Layered Structures and Epitaxy Symposium. :67-72.
Palmstrom C.J, Morgan D.V, Howes M.J.  1978.  CONTACT DEGRADATION OF GAAS TRANSFERRED ELECTRON DEVICES. Nuclear Instruments & Methods. 150:305-311.
Palmstrom C.J, Cheeks T.L, Nahory R.E, Wilkens B.J, Martinez J.A, Miceli P.F, Keramidas V.G, Zhu J.G, Carter C.B.  1990.  STRUCTURAL AND ELECTRICAL-PROPERTIES OF INSITU FABRICATED EPITAXIAL THERMODYNAMICALLY STABLE SEMIMETALLIC COMPOUNDS ON MBE-GROWN GAAS. Journal of Electronic Materials. 19:39-40.
Palmstrom C.J, Gyulai J., Mayer J.W.  1983.  PHASE-SEPARATION IN INTERACTIONS OF TANTALUM CHROMIUM-ALLOY ON SI. Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films. 1:452-454.
Palmstrom C.J, Schwarz S.A, Yablonovitch E., Harbison J.P, Schwartz C.L, Florez L.T, Gmitter T.J, Marshall E.D, Lau S.S.  1990.  GE REDISTRIBUTION IN SOLID-PHASE GE/PD/GAAS OHMIC CONTACT FORMATION. Journal of Applied Physics. 67:334-339.
Palmstrom C.J, Carr D.M, Dong J.W, Dong X., Lu J., Ludge K., McKernan S., Schultz B.D, Shih T.C, Xie J.Q et al..  2002.  MBE growth and interfacial reaction control of ferromagnetic metal/GaAs heterostructures. 2002 International Conference on Molecular Beam Epitaxy (Cat. No.02EX607). :117-18.
Palmstrom C.J, Galvin G.J.  1985.  SOLID-PHASE EPITAXY OF DEPOSITED AMORPHOUS-GE ON GAAS. Applied Physics Letters. 47:815-817.
Palmstrom C.J, Morgan D.V, Howes M.J.  1977.  CONTACT-DEGRADATION STUDIES ON GAAS TRANSFERRED-ELECTRON DEVICES USING A FOCUSED BACKSCATTERING TECHNIQUE. Electronics Letters. 13:504-505.
Palmstrom C.J, Cheeks T.L, Gilchrist H.L, Zhu J.G, Carter C.B, Wilkens B.J, Martin R..  1992.  EFFECT OF ORIENTATION ON THE SCHOTTKY-BARRIER HEIGHT OF THERMODYNAMICALLY STABLE EPITAXIAL METAL GAAS STRUCTURES. Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films. 10:1946-1952.
Palmstrom C.J, Garrison K., Fimland B.O, Harbison J.P, Sands T., Chase E.W, Florez L..  1988.  INSITU FABRICATED METAL ALLOY CONTACTS TO GA1-XALXAS (X=0-1) - A TEST OF MODELS FOR SCHOTTKY-BARRIER FORMATION. Journal of Electronic Materials. 17:S24-S25.
Palmstrom C.J, Schwarz S.A, Marshall E.D, Yablonovitch E., Harbison J.P, Schwartz C.L, Florez L., Gmitter T.J, Wang L.C, Lau S.S.  1988.  A high depth resolution backside secondary ion mass spectrometry technique used for studying metal/GaAs contacts. Advanced Surface Processes for Optoelectronics: Symposium. :283-8.
Palmstrom C.J.  1995.  EPITAXY OF DISSIMILAR MATERIALS. Annual Review of Materials Science. 25:389-415.
Palmstrom C.J, Fimland B.O, Sands T., Garrison K.C, Bartynski R.A.  1989.  EPITAXIAL COGA AND TEXTURED COAS CONTACTS ON GA1-XALXAS FABRICATED BY MOLECULAR-BEAM EPITAXY. Journal of Applied Physics. 65:4753-4758.
Palmstrom C.J, Morgan D.V.  1985.  Metallizations for GaAs devices and circuits. Gallium arsenide materials, devices, and circuits. :195-261.

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