Publications

Found 46 results
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Preu S., Lu H., Kawasaki J.K., Ouellette D.G., Palmstrom C.J., Sherwin M.S., Gossard A.C..  2014.  THz spectroscopy of self-assembled ErSb nanowire. Conference on Lasers and Electro-Optics (CLEO) - Laser Science to Photonic Applications.
Podpirka A.A., Shabani J., Katz M.B., Twigg M.E., Mack S., Palmstrom C.J., Bennett B.R..  2015.  Growth and characterization of (110) InAs quantum well metamorphic heterostructures. Journal of Applied Physics. 117, 245313
Peterson T.A., McFadden A.P., Palmstrøm C.J., Crowell P.A..  2018.  Influence of the magnetic proximity effect on spin-orbit torque efficiencies in ferromagnet/platinum bilayers. Phys Rev B. 97
Peterson T.A., Patel S.J., Geppert C.C., Christie K.D., Rath A., Pennachio D., Flatté M.E., Voyles P.M., Palmstrøm C.J., Crowell P.A.  2016.  Spin injection and detection up to room temperature in Heusler alloy/n-GaAs spin valves. Phys. Rev. B 94, 235309.
Pechan M.J, Yu C.T, Carr D., Palmstrom C.J.  2005.  Remarkable strain-induced magnetic anisotropy in epitaxial Co2MnGa (001) films. Journal of Magnetism and Magnetic Materials. 286:340-345.
Pechan M.J, Compton R.L, Bennett D., Chen L.C, Palmstrom C.J, Allen S.J.  2001.  Magnetic anisotropy and interlayer coupling in Fe0.5Co0.5(100) films on GaAs(100). Journal of Applied Physics. 89:7514-7516.
Patel S.J., Logan J.A., Harrington S.D., Schultz B.D, Palmstrøm C.J.  2016.  Surface reconstructions and transport of epitaxial PtLuSb(001) thin films grown by MBE. J Cryst Growth. 436, 145
Patel SJ, Kawasaki JK, Logan J, Schultz BD, Adell J., Thiagarajan B., Mikkelsen A., Palmstrøm CJ.  2014.  Surface and electronic structure of epitaxial PtLuSb (001) thin films. Applied Physics Letters. 104:-.
Park S., Fitzsimmons M.R, Dong X.Y, Schultz B.D, Palmstrom C.J.  2004.  Magnetic degradation of an FeCo/GaAs interface. Physical Review B. 70
Park M.H, Wang L.C, Palmstrom C.J.  1997.  Low resistance Pd/Zn/Pd ohmic contact to p-In(0.82)Ga0.18As(0.39)P(0.61). Journal of Applied Physics. 81:2720-2724.
Park M.H, Wang L.C, Cheng J.Y, Palmstrom C.J.  1997.  Low resistance Ohmic contact scheme (similar to mu Omega cm(2)) to p-InP. Applied Physics Letters. 70:99-101.
Park S., Fitzsimmons M.R, Majkrzak C.F, Schultz B.D, Palmstrom C.J.  2008.  The influence of growth temperature and annealing on the magnetization depth profiles across ferromagnetic/semiconductor interfaces. Journal of Applied Physics. 104
Park M.H, Wang L.C, Cheng J.Y, Deng F., Lau S.S, Palmstrom C.J.  1996.  Low resistance Zn3P2/InP heterostructure ohmic contact to p-InP. Applied Physics Letters. 68:952-954.
Park S., Fitzsimmons M.R, Dong X.Y, Schultz B.D, Palmstrom C.J.  2004.  Magnetic degradation of an FeCo/GaAs interface. Physical Review B (Condensed Matter and Materials Physics). 70:104406-1-10.
Pan Q., Dong J.W, Palmstrom C.J, Cui J., James R.D.  2002.  Magnetic domain observations of freestanding single crystal patterned Ni2MnGa films. Journal of Applied Physics. 91:7812-7814.
Palmstrøm CJ.  2016.  Heusler Compounds and Spintronics. Progress in Crystal Growth and Characterization of Materials. 62
Palmstrom C.J, Garrison K., Fimland B.O, Harbison J.P, Sands T., Chase E.W, Florez L..  1988.  INSITU FABRICATED METAL ALLOY CONTACTS TO GA1-XALXAS (X=0-1) - A TEST OF MODELS FOR SCHOTTKY-BARRIER FORMATION. Journal of Electronic Materials. 17:S24-S25.
Palmstrom C.J, Schwarz S.A, Marshall E.D, Yablonovitch E., Harbison J.P, Schwartz C.L, Florez L., Gmitter T.J, Wang L.C, Lau S.S.  1988.  A high depth resolution backside secondary ion mass spectrometry technique used for studying metal/GaAs contacts. Advanced Surface Processes for Optoelectronics: Symposium. :283-8.
Palmstrom C.J.  1995.  EPITAXY OF DISSIMILAR MATERIALS. Annual Review of Materials Science. 25:389-415.
Palmstrom C.J, Fimland B.O, Sands T., Garrison K.C, Bartynski R.A.  1989.  EPITAXIAL COGA AND TEXTURED COAS CONTACTS ON GA1-XALXAS FABRICATED BY MOLECULAR-BEAM EPITAXY. Journal of Applied Physics. 65:4753-4758.
Palmstrom C.J, Morgan D.V.  1985.  Metallizations for GaAs devices and circuits. Gallium arsenide materials, devices, and circuits. :195-261.
Palmstrom C.  2006.  Spintronics. Ieee Signal Processing Magazine. 23:96-+.
Palmstrom C.J, Chase E.W, Hwang D.M, Harbison J.P, Chang C.C, Kaplan A.S, Nazar L..  1988.  STUDIES OF CO/GA1-XALXAS INTERFACES FABRICATED IN ULTRAHIGH-VACUUM. Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films. 6:1456-1461.
Palmstrom C.J, Garrison K.C, Mounier S., Sands T., Schwartz C.L, Tabatabaie N., Allen S.J, Gilchrist H.L, Miceli P.F.  1989.  GROWTH OF EPITAXIAL RARE-EARTH ARSENIDE (100)GAAS AND GAAS RARE-EARTH ARSENIDE (100)GAAS STRUCTURES. Journal of Vacuum Science & Technology B. 7:747-752.
Palmstrom C.J, Sands T., Harbison J.P, Finstad T.G, Mounier S., Florez L.T, Keramidas V.G, Zhu J.G, Carter C.B.  1990.  Growth of buried metal aluminides and gallides and of rare-earth monopnictides in compound semiconductors: a comparison. Proceedings of the SPIE - The International Society for Optical Engineering. 1285:85-94.

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