Found 18 results
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Kramer D.E, Chen L.C, Palmstrom C.J, Gerberich W.W.  1998.  Substrate effects on yield point phenomena in epitaxial thin films. Fundamentals of Nanondentation and Nanotribology. Symposium. :89-94.
Krafcsik I., Palmstrom C.J, Gyulai J., Colgan E., Zingu E., Mayer J.W.  1983.  THIN-FILM INTERACTIONS OF AL AND AL (CU) ON W AND TI. Journal of the Electrochemical Society. 130:C102-C102.
Krafcsik I., Gyulai J., Palmstrom C.J, Mayer J.W.  1983.  INFLUENCE OF CU AS AN IMPURITY IN AL/TI AND AL/W THIN-FILM REACTIONS. Applied Physics Letters. 43:1015-1017.
Komesu T., Jeong H.K, Choi J., Borca C.N, Dowben P.A, Petukhov A.G, Schultz B.D, Palmstrom C.J.  2003.  Electronic structure of ErAs(100). Physical Review B. 67
Koltun R, Hall JL, Mates TE, Bowers JE, Schultz BD, Palmstrom CJ.  2013.  Thermoelectric properties of single crystal Sc[sub 1 - x]Er[sub x]As:InGaAs nanocomposites. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 31:041401.
Kjaergaard M., Nichele F., Suominen H.J., Nowak M.P., Wimmer M., Akhmerov A.R., Folk J.A., Flensberg K., Shabani J., Palmstrøm C.J. et al..  2016.  Quantized conductance doubling and hard gap in a two-dimensional semiconductor-superconductor heterostructure. Nature Communications. 7:12841
Kjaergaard M., Suominen H.J., Nowak M.P., Akhmerov A.R., Shabani J., Palmstrøm C.J., Nichele F., Marcus C.M..  2017.  Transparent Semiconductor-Superconductor Interface and Induced Gap in an Epitaxial Heterostructure Josephson Junction. Physical Review Applied. 7, 034029
Kim J., Kim H., M. Kilic E, Gayner C., Koltun R., Park H., Soon A., Bowers J., Palmstrøm C., Kim W..  2018.  Effect of phonon confinement on the thermal conductivity of In0.53Ga0.47As nanofilms. Journal of Applied Physics. 123, 245103(
Kawasaki JK, Timm R, Delaney KT, Lundgren E, Mikkelsen A, Palmstrom CJ.  2011.  Local Density of States and Interface Effects in Semimetallic ErAs Nanoparticles Embedded in GaAs. Physical Review Letters. 107
Kawasaki JK, Johansson LIM, Schultz BD, Palmstrøm CJ.  2014.  Growth and transport properties of epitaxial lattice matched half Heusler CoTiSb/InAlAs/InP(001) heterostructures. Applied Physics Letters. 104
Kawasaki JK, Timm R, Buehl TE, Lundgren E, Mikkelsen A, Gossard AC, Palmstrom CJ.  2011.  Cross-sectional scanning tunneling microscopy and spectroscopy of semimetallic ErAs nanostructures embedded in GaAs. Journal of Vacuum Science & Technology B. 29
Kawasaki J.K., Sharan A., Johansson L.I.M., Hjort M., Timm R., Thiagarajan B., Schultz B.D., Mikkelsen A., Janotti A., Palmstrøm C.J..  2018.  A simple electron counting model for half-Heusler surfaces. Science Advances. 4, eaar5832
Kawasaki J.K, Schultz B.D, Palmstrom C.J.  2013.  Size effects on the electronic structure of ErSb nanoparticles embedded in the GaSb(001) surface. Physical Review B. 87(035419)
Kawasaki JK, Neulinger T, Timm R, Hjort M, Zakharov AA, Mikkelsen A, Schultz BD, Palmstrom CJ.  2013.  Epitaxial growth and surface studies of the Half Heusler compound NiTiSn (001). Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 31:04D106.
Kawasaki JK, Schultz BD, Lu H, Gossard AC, Palmstrøm CJ.  2013.  Surface-Mediated Tunable Self-Assembly of Single Crystal Semimetallic ErSb/GaSb Nanocomposite Structures. Nano Letters. 13(6)
Kavanagh K.L, Chen S.H, Palmstrom C.J, Carter C.B, Mukherjee S.D.  1984.  RBS and TEM analysis of Ta silicides on GaAs. Thin Films and Interfaces II. Proceedings of the Symposium. :143-8.
Kadow C., Fleischer S.B, Ibbetson J.P, Bowers J.E, Gossard A.C, Dong J.W, Palmstrom C.J.  1999.  Self-assembled ErAs islands in GaAs: Growth and subpicosecond carrier dynamics. Applied Physics Letters. 75:3548-3550.