Found 14 results
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Han C.C, Wang X.Z, Wang L.C, Marshall E.D, Lau S.S, Schwarz S.A, Palmstrom C.J, Harbison J.P, Florez L.T, Potemski R.M et al..  1990.  NONSPIKING OHMIC CONTACT TO P-GAAS BY SOLID-PHASE REGROWTH. Journal of Applied Physics. 68:5714-5718.
Harbison J.P, Sands T., Palmstrom C.J, Cheeks T.L, Florez L.T, Keramidas V.G.  1992.  NEW DIRECTIONS FOR III-V STRUCTURES - METAL-SEMICONDUCTOR HETEROEPITAXY. Institute of Physics Conference Series. :1-8.
Harbison J.P, Sands T., Palmstrom C.J, Cheeks T.L, Florez L.T, Keramidas V.G.  1992.  New directions for III-V structures: metal/semiconductor heteroepitaxy. Gallium Arsenide and Related Compounds 1991. Proceedings of the Eighteenth International Symposium. :1-8.
Harmon N.J., Peterson T.A., Geppert C.C., Patel S.J., Palmstrøm C.J, Crowell P.A., Flatté M.E..  2015.  Anisotropic spin relaxation in n-GaAs from strong inhomogeneous hyperfine fields produced by the dynamical polarization of nuclei. Phys Rev B. 92, 140201
Harrington S.D., Rice A.D., Brown-Heft T.L., Bonef B., Sharan A., McFadden A.P, Logan J.A., Pendharkar M., Feldman M.M., Mercan O. et al..  2018.  Growth, electrical, structural, and magnetic properties of half-Heusler CoTi1−x Fex Sb. Phys Rev Materials. 2
Harrington S.D., Sharan A., Rice A.D., Logan J.A., McFadden A.P., Pendharkar M., Pennachio D.J., Wilson N.S., Gui Z., Janotti A. et al..  2017.  Valence-band offsets of CoTiSb/In0.53Ga0.47As and CoTiSb/In0.52Al0.48As heterojunctions. Appl. Phys. Lett.. 111, 061605
Hilton J.L, Schultz B.D, Palmstrom C.J.  2007.  Growth temperature dependence of Mn/GaAs surfaces and interfaces. Journal of Applied Physics. 102
Hilton J.L, Schultz B.D, McKernan S., Spanton S.M, Evans M.MR, Palmstrom C.J.  2005.  Phase behavior of thin film Mn/GaAs interfacial reactions. Journal of Vacuum Science & Technology B. 23:1752-1758.
Hilton J.L, Schultz B.D, McKernan S., Palmstrom C.J.  2004.  Interfacial reactions of Mn/GaAs thin films. Applied Physics Letters. 84:3145-3147.
Hjort M., Kratzer P., Lehmann S., Patel S.J., Dick K.A., Palmstrøm C.J., Timm R., Mikkelsen A..  2017.  Crystal Structure Induced Preferential Surface Alloying of Sb on Wurtzite/Zinc Blende GaAs Nanowires. Nano Letters. 17
Hong B.WP, Song J.I, Palmstrom C.J, Vandergaag B., Chough K.B, Hayes J.R.  1994.  DC, RF, AND NOISE CHARACTERISTICS OF CARBON-DOPED BASE INP/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS. Ieee Transactions on Electron Devices. 41:19-25.
Hu Q.O, Garlid E.S, Crowell P.A, Palmstrom C.J.  2011.  Spin accumulation near Fe/GaAs (001) interfaces: The role of semiconductor band structure. Physical Review B. 84
Hugsted B., Tafto J., Finstad T.G, Palmstrom C.J.  1993.  POLARITY OF SMALL (111)GAAS DOMAINS ON (100)SC0.32ER0.68AS FORMED DURING MOLECULAR-BEAM EPITAXIAL-GROWTH. Applied Physics Letters. 63:2499-2501.
Hung L.S, Kennedy E.F, Palmstrom C.J, Olowolafe J.O, Mayer J.W, Rhodes H..  1985.  SILICIDE FORMATION BY THERMAL ANNEALING OF NI AND PD ON HYDROGENATED AMORPHOUS-SILICON FILMS. Applied Physics Letters. 47:236-238.