Found 31 results
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Czanderna K.K, Morrissey K.J, Palmstrom C.J, Carter C.B, Merrill R.P.  1989.  GROWTH OF GAMMA-ALUMINA ON CRYSTALLOGRAPHICALLY DISTINCT ALUMINUM SUBSTRATES. Journal of Materials Science. 24:515-522.
Crooker S.A, Furis M., Lou X., Crowell P.A, Smith D.L, Adelmann C., Palmstrom C.J.  2007.  Optical and electrical spin injection and spin transport in hybrid Fe/GaAs devices. Journal of Applied Physics. 101
Crooker S.A, Furis M., Lou X., Adelmann C., Smith D.L, Palmstrom C.J, Crowell P.A.  2005.  Imaging spin transport in lateral ferromagnet/semiconductor structures. Science. 309:2191-2195.
Crooker S.A, Smith D.L, Palmstrom C.J, Crowell P.A.  2008.  Imaging spin injection and spin transport in semiconductors. 2008 Quantum Electronics and Laser Science Conference (QELS). :1pp.-1pp..
Crooker S.A, Garlid E.S, Chantis A.N, Smith D.L, Reddy K.SM, Hu Q.O, Kondo T., Palmstrom C.J, Crowell P.A.  2009.  Bias-controlled sensitivity of ferromagnet/semiconductor electrical spin detectors. Physical Review B. 80
Colgan E.G, Palmstrom C.J, Mayer J.W.  1985.  INFLUENCE OF CU AS AN IMPURITY IN AL/V THIN-FILM REACTIONS. Journal of Applied Physics. 58:1838-1840.
Clinger LE, Pernot G, Buehl TE, Burke PG, Gossard AC, Palmstrom CJ, Shakouri A, Zide JMO.  2012.  Thermoelectric properties of epitaxial TbAs:InGaAs nanocomposites. Journal of Applied Physics. 111
Chun-Gang D, Komesu T., Hae-Kyung J, Borca C.N, Wei-Guo Y, Jianjun L, Mei W.N, Dowben P.A, Petukhov A.G, Schultz B.D et al..  2004.  Hybridization between 4f-5d states in ErAs(100). Surface Review and Letters. 11:531-9.
Christie K.D., Geppert C.C., Patel S.J., Hu Q.O, Palmstrøm C.J., Crowell P.A.  2015.  Knight shift and nuclear spin relaxation in Fe/n-GaAs heterostructures. Physical Review B. 92, 155204
Choi S.G, Srivastava S.K, Palmstrom C.J, Kim Y.D, Cooper S.L, Aspnes D.E.  2005.  Optical properties of (GaSb)(3n)(AlSb)(n) (1 <= n <= 5) superlattices. Journal of Vacuum Science & Technology B. 23:1149-1153.
Choi S.G, Dattelbaum A.M, Picraux S.T, Srivastava S.K, Palmstrom C.J.  2008.  Optical properties and critical-point energies of BaTiO3 (001) from 1.5 to 5.2 eV. Journal of Vacuum Science & Technology B. 26:1718-1722.
Choi S.G, Srivastava S.K, Palmstrom C.J.  2005.  Optical properties of AlGaSb alloys grown by MBE. AIP Conference Proceedings. :125-6.
Choi S.G, Aspnes D.E, Stoute N.A, Kim Y.D, Kim H.J, Chang Y.C, Palmstrom C.J.  2008.  Dielectric properties of InAsP alloy thin films and evaluation of direct- and reciprocal-space methods of determining critical-point parameters. Physica Status Solidi a-Applications and Materials Science. 205:884-887.
Choi S.G, Schultz B.D, Wang Y.Q, Palmstrom C.J.  2007.  Molecular beam epitaxy of ScxEr1-xSb on InAs(100). Journal of Crystal Growth. 303:433-437.
Choi S.G, Palmstrom C.J, Kim Y.D, Cooper S.L, Aspnes D.E.  2005.  Dielectric functions of AlxGa1-xSb (0.00 <= x <= 0.39) alloys from 1.5 to 6.0 eV. Journal of Applied Physics. 98
Choi S.G, Palmstrom C.J, Kim Y.D, Aspnes D.E, Kim H.J, Chang Y-C.  2007.  Dielectric functions and electronic structure of InAsxP1-x films on InP. Applied Physics Letters. 91
Chengtao Y, Pechan M.J, Srivastava S., Palmstrom C.J, Biegaslski M., Brooks C., Schlom D..  2008.  Ferromagnetic resonance in ferromagnetic/ferroelectric Fe/BaTiO 3/SrTiO 3(001). Journal of Applied Physics. 103:07B108-1-3.
Chengtao Y, Pechan M.J, Carr D., Palmstrom C.J.  2006.  Ferromagnetic resonance in the stripe domain state: a study in Co 2MnGa (001). Journal of Applied Physics. 99:8J109-1-3.
Chen W., Kahn A., Mangat P.S, Soukiassian P., Florez L.T, Harbison J.P, Palmstrom C.J.  1993.  PB/GAAS(100) - BAND BENDING, ADATOM-INDUCED GAP STATES AND SURFACE DIPOLE. Journal of Vacuum Science & Technology B. 11:1571-1574.
Chen L.C, Dong J.W, Schultz B.D, Palmstrom C.J, Berezovsky J., Isakovic A., Crowell P.A, Tabat N..  2000.  Epitaxial ferromagnetic metal/GaAs(100) heterostructures. Journal of Vacuum Science & Technology B. 18:2057-2062.
Chen S.H, Carter C.B, Palmstrom C.J, Ohashi T..  1986.  TRANSMISSION ELECTRON-MICROSCOPY STUDIES ON LATERAL REACTION OF GAAS WITH NI. Applied Physics Letters. 48:803-805.
Chen L.C, Caldwell D.A, Muller T.A, Finstad T.G, Schildgen W., Palmstrom C.J.  1999.  MBE growth and in situ electrical characterization of metal semiconductor structures. Journal of Crystal Growth. 201:146-149.
Chen S.H, Carter C.B, Palmstrom C.J, Ohashi T..  1986.  Lateral reactions of GaAs with Ni studied by transmission electron microscopy. Thin Films - Interfaces and Phenomena. Part of the Fall 1985 Meeting of the Materials Research Society. :361-6.
Chen L.C, Caldwell D.A, Finstad T.G, Palmstrom C.J.  1999.  In situ formation, reactions, and electrical characterization of molecular beam epitaxy-grown metal/semiconductor interfaces. Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films. 17:1307-1312.
Chen S.H, Carter C.B, Palmstrom C.J.  1988.  LATERAL DIFFUSION IN NI-GAAS COUPLES INVESTIGATED BY TRANSMISSION ELECTRON-MICROSCOPY. Journal of Materials Research. 3:1385-1396.