Publications

Found 17 results
[ Author(Desc)] Title Type Year
Filters: First Letter Of Last Name is B  [Clear All Filters]
A B C D E F G H I J K L M N O P Q R S T U V W X Y Z 
B
Bhat R., Koza M.A, BRASIL MJSP, Nahory R.E, Palmstrom C.J, Wilkens B.J.  1992.  INTERFACE CONTROL IN GAAS/GAINP SUPERLATTICES GROWN BY OMCVD. Journal of Crystal Growth. 124:576-582.
Bhattacharya K., DeSimone A., Hane K.F, James R.D, Palmstrom C.J.  1999.  Tents and tunnels on martensitic films. Materials Science and Engineering a-Structural Materials Properties Microstructure and Processing. 273:685-689.
Bogaerts R., Dekeyser A., Herlach F., Peeters F.M, Derosa F., Palmstrom C.J, Brehmer D., Allen S.J.  1994.  SIZE EFFECTS IN THE TRANSPORT-PROPERTIES OF THIN SC(1-X)ER(X)AS EPITAXIAL LAYERS BURIED IN GAAS. Solid-State Electronics. 37:789-792.
Bogaerts R., De Keyser A., Herlach F., Peeters F.M, Derosa F., Palmstrom C.J, Brehmer D., Allen, Jr. S.J.  1995.  Quantum oscillations in the Hall effect of thin Sc 1-xEr xAs epitaxial layers buried in GaAs. 11th International Conference, High Magnetic Fields in the Physics of Semiconductors. :706-9.
Bogaerts R., Vanesch A., Vanbockstal L., Herlach F., Peeters F.M, Derosa F., Palmstrom C.J, Allen S.J.  1993.  EXPERIMENTAL-STUDY OF THE ENERGY-BAND STRUCTURE OF SC1-XERXAS LAYERS IN PULSED MAGNETIC-FIELDS. Physica B. 184:232-235.
Bogaerts R., Vanbockstal L., Herlach F., Peeters F.M, Derosa F., Palmstrom C.J, Allen S.J.  1992.  MAGNETOTRANSPORT MEASUREMENTS ON THIN SC1-XERXAS EPITAXIAL-FILMS IN PULSED MAGNETIC-FIELDS. Physica B. 177:425-429.
Bogaerts R., Herlach F., Dekeyser A., Peeters F.M, Derosa F., Palmstrom C.J, Brehmer D., Allen S.J.  1996.  Experimental determination of the Fermi surface of thin Sc1-xErxAs epitaxial layers in pulsed magnetic fields. Physical Review B. 53:15951-15963.
Brat T., Eizenberg M., Fastow R., Palmstrom C.J, Mayer J.W.  1985.  PULSED PROTON-BEAM ANNEALING OF IR AND IRXV100-X THIN-FILMS ON SILICON. Journal of Applied Physics. 57:264-269.
Brehmer D.E, Ibbetson J.P, Kai Z, Petukhov A.G, Schwarz C.J, Chau S.P, Allen S.J, Palmstrom C.J, Zhang J.P, Wilkens B..  1995.  Resonant tunneling through (Al,Ga)As/ErAs/(Al,Ga)As, semi-metal quantum wells. Semiconductor Heteroepitaxy. Growth, Characterization and Device Applications. :672-5.
Brehmer D.E, Zhang K., Schwarz C.J, Chau S.P, Allen S.J, Ibbetson J.P, Zhang J.P, Petukhov A.G, Palmstrom C.J, Wilkens B..  1996.  Resonant tunneling through rare earth arsenide, semimetal quantum wells. Solid-State Electronics. 40:241-244.
Brehmer D.E, Zhang K., Schwarz C.J, Chau S.P, Allen S.J, Ibbetson J.P, Zhang J.P, Palmstrom C.J, Wilkens B..  1995.  RESONANT-TUNNELING THROUGH ERAS SEMIMETAL QUANTUM-WELLS. Applied Physics Letters. 67:1268-1270.
Brown-Heft T.L., Logan J.A., McFadden A.P, Guillemard C., Le Fèvre P., Betran F., Andrieu S., Palmstrøm C.J..  2018.  Epitaxial Heusler superlattice Co2MnAl/Fe2MnAl with perpendicular magnetic anisotropy and termination-dependent half-metallicity. Phys Rev Materials. 2, 034402
Buehl TE, Palmstrom CJ, Gossard AC.  2011.  Embedded ErAs nanorods on GaAs(n11) substrates by molecular beam epitaxy. Journal of Vacuum Science & Technology B. 29
Buehl TE, LeBeau JM, Stemmer S, Scarpulla MA, Palmstrom CJ, Gossard AC.  2010.  Growth of embedded ErAs nanorods on (411)A and (411)B GaAs by molecular beam epitaxy. Journal of Crystal Growth. 312:2089-2092.
Burke PG, Buehl TE, Gilles P, Lu H, Shakouri A, Palmstrom CJ, Bowers JE, Gossard AC.  2012.  Controlling n-Type Carrier Density from Er Doping of InGaAs with MBE Growth Temperature. Journal of Electronic Materials. 41:948-953.
Buschbeck J., Kawasaki J.K, Kozhanov A., James R.D, Palmstrom C.J.  2011.  Martensite transformation of epitaxial Ni-Ti films. Applied Physics Letters. 98
Buschbeck J., Kawasaki J.K, Buehl T.E, Gossard A.C, Palmstrom C.J.  2011.  Growth of epitaxial NiTi shape memory alloy films on GaAs(001) and evidence of martensitic transformation. Journal of Vacuum Science & Technology B. 29