Publications

Found 293 results
Author Title Type [ Year(Asc)]
1990
Cheeks T.L, Sands T., Nahory R.E, Harbison J.P, Palmstrom C.J, Gilchrist H.L, Ramesh R., Keramidas V.G.  1990.  EPITAXIAL METAL-III-V SEMICONDUCTOR DOUBLE HETEROSTRUCTURE SCHOTTKY DIODES - CHARACTERIZATION AND NOVEL DEVICE POTENTIAL. Journal of Electronic Materials. 19:40-40.
Palmstrom C.J, Schwarz S.A, Yablonovitch E., Harbison J.P, Schwartz C.L, Florez L.T, Gmitter T.J, Marshall E.D, Lau S.S.  1990.  GE REDISTRIBUTION IN SOLID-PHASE GE/PD/GAAS OHMIC CONTACT FORMATION. Journal of Applied Physics. 67:334-339.
Palmstrom C.J, Sands T., Harbison J.P, Finstad T.G, Mounier S., Florez L.T, Keramidas V.G, Zhu J.G, Carter C.B.  1990.  Growth of buried metal aluminides and gallides and of rare-earth monopnictides in compound semiconductors: a comparison. Proceedings of the SPIE - The International Society for Optical Engineering. 1285:85-94.
Zhu J.G, McKernan S., Palmstrom C.J, C. Carter B.  1990.  High-resolution imaging of CoGa/GaAs and ErAs/GaAs interfaces. Atomic Scale Structure of Interfaces Symposium. :89-94.
Sands T., Harbison J.P, Ramesh R., Palmstrom C.J, Florez L.T, Keramidas V.G.  1990.  INTERFACE CRYSTALLOGRAPHY AND STABILITY IN EPITAXIAL METAL (NIAL, COAL)/III-V SEMICONDUCTOR HETEROSTRUCTURES. Materials Science and Engineering B-Solid State Materials for Advanced Technology. 6:147-157.
Palmstrom C.J, Mounier S., Finstad T.G, Miceli P.F.  1990.  LATTICE-MATCHED SC1-XERXAS/GAAS HETEROSTRUCTURES - A DEMONSTRATION OF NEW SYSTEMS FOR FABRICATING LATTICE-MATCHED METALLIC COMPOUNDS TO SEMICONDUCTORS. Applied Physics Letters. 56:382-384.
Allen S.J, Tabatabaie N., Palmstrom C.J, Mounier S., Hull G.W, Sands T., Derosa F., Gilchrist H.L, Garrison K.C.  1990.  MAGNETOTRANSPORT IN ULTRATHIN ERAS EPITAXIAL LAYERS BURIED IN GAAS. Surface Science. 228:13-15.
Zhu J.G, Carter C.B, Palmstrom C.J, Mounier S..  1990.  MICROSTRUCTURE OF EPITACTICALLY GROWN GAAS/ERAS/GAAS. Applied Physics Letters. 56:1323-1325.
Han C.C, Wang X.Z, Wang L.C, Marshall E.D, Lau S.S, Schwarz S.A, Palmstrom C.J, Harbison J.P, Florez L.T, Potemski R.M et al..  1990.  NONSPIKING OHMIC CONTACT TO P-GAAS BY SOLID-PHASE REGROWTH. Journal of Applied Physics. 68:5714-5718.
Zhu J.G, Palmstrom C.J, Carter C.B.  1990.  Phase boundaries between GaAs and other cubic materials. EMAG-MICRO 89. Proceedings of the Institute of Physics Electron Microscopy and Analysis Group and Royal Microscopical Society Conference. :411-14vol.1.
Zhu J.G, Palmstrom C.J, Carter C.B.  1990.  PHASE BOUNDARIES BETWEEN GAAS AND OTHER CUBIC MATERIALS. Institute of Physics Conference Series. :411-414.
Farrell H.H, Palmstrom C.J.  1990.  REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION CHARACTERISTIC ABSENCES IN GAAS(100) (2X4)-AS - A TOOL FOR DETERMINING THE SURFACE STOICHIOMETRY. Journal of Vacuum Science & Technology B. 8:903-907.
Sands T., Palmstrom C.J, Harbison J.P, Keramidas V.G, Tabatabaie N., Cheeks T.L, Ramesh R., Silberberg Y..  1990.  Stable and epitaxial metal/III-V semiconductor heterostructures. Material Science Reports. 5:99-170.
Palmstrom C.J, Cheeks T.L, Nahory R.E, Wilkens B.J, Martinez J.A, Miceli P.F, Keramidas V.G, Zhu J.G, Carter C.B.  1990.  STRUCTURAL AND ELECTRICAL-PROPERTIES OF INSITU FABRICATED EPITAXIAL THERMODYNAMICALLY STABLE SEMIMETALLIC COMPOUNDS ON MBE-GROWN GAAS. Journal of Electronic Materials. 19:39-40.
1989
Zhu J.G, Carter C.B, Palmstrom C.J, Garrison K.C.  1989.  CHARACTERIZATION OF THE COGA/GAAS INTERFACE. Applied Physics Letters. 55:39-41.
Palmstrom C.J, Fimland B.O, Sands T., Garrison K.C, Bartynski R.A.  1989.  EPITAXIAL COGA AND TEXTURED COAS CONTACTS ON GA1-XALXAS FABRICATED BY MOLECULAR-BEAM EPITAXY. Journal of Applied Physics. 65:4753-4758.
Allen S.J, Tabatabaie N., Palmstrom C.J, Hull G.W, Sands T., Derosa F., Gilchrist H.L, Garrison K.C.  1989.  ERAS EPITAXIAL LAYERS BURIED IN GAAS - MAGNETOTRANSPORT AND SPIN-DISORDER SCATTERING. Physical Review Letters. 62:2309-2312.
Palmstrom C.J, Garrison K.C, Fimland B.O, Sands T., Bartynski R.A.  1989.  Fabrication and electrical properties of MBE grown metal-gallium and metal-arsenic compounds on Ga 1-xAl xAs. Advances in Materials, Processing and Devices in III-V Compound Semiconductors Symposium. :583-8.
Garrison K.C, Palmstrom C.J, Bartynski R.A.  1989.  Growth and characterization of single crystal epitaxial CoGa on MBE grown III-V semiconductors. Advances in Materials, Processing and Devices in III-V Compound Semiconductors Symposium. :613-18.
Palmstrom C.J, Garrison K.C, Mounier S., Sands T., Schwartz C.L, Tabatabaie N., Allen S.J, Gilchrist H.L, Miceli P.F.  1989.  GROWTH OF EPITAXIAL RARE-EARTH ARSENIDE (100)GAAS AND GAAS RARE-EARTH ARSENIDE (100)GAAS STRUCTURES. Journal of Vacuum Science & Technology B. 7:747-752.
Czanderna K.K, Morrissey K.J, Palmstrom C.J, Carter C.B, Merrill R.P.  1989.  GROWTH OF GAMMA-ALUMINA ON CRYSTALLOGRAPHICALLY DISTINCT ALUMINUM SUBSTRATES. Journal of Materials Science. 24:515-522.
Zhu J.G, Palmstrom C.J, Garrison K.C, Carter C.B.  1989.  MISFIT DISLOCATIONS AT THE COGA/GAAS INTERFACE. Institute of Physics Conference Series. :659-664.
Zhu J.G, Palmstrom C.J, Garrison K.C, Carter C.B.  1989.  Misfit dislocations at the CoGa/GaAs interface. Microscopy of Semiconducting Materials 1989. Proceedings of the Royal Microscopical Society Conference. :659-64.
Marshall E.D, Lau S.S, Palmstrom C.J, Sands T., Schwartz C.L, Schwarz S.A, Harbison J.P, Florez L.T.  1989.  Ohmic contact formation mechanism in the Ge/Pd/n-GaAs system. Chemistry and defects in semiconductor heterostructures Symposium. :163-8.
Schwarz S.A, Mei P., Hwang D.M, Schwartz C.L, Venkatesan T., Palmstrom C.J, Stoffel N.G, Bhat R..  1989.  Studies of In 0.53Ga 0.47As/InP superlattice mixing and conversion. Advances in Materials, Processing and Devices in III-V Compound Semiconductors Symposium. :233-8.

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