Publications

Found 293 results
[ Author(Asc)] Title Type Year
A B C D E F G H I J K L M N O P Q R S T U V W X Y Z 
G
Gyulai J., Fastow R., Kavanagh K., Thompson M.O, Palmstrom C.J, Hewett C.A, Mayer J.W.  1983.  Crystallization of amorphous silicon films by pulsed ion beam annealing. Laser-Solid Interactions and Transient Thermal Processing of Materials. :455-60.
Green P.F, Palmstrom C.J, Mayer J.W, Kramer E.J.  1985.  MARKER DISPLACEMENT MEASUREMENTS OF POLYMER POLYMER INTERDIFFUSION. Macromolecules. 18:501-507.
Green P.F, Mills P.J, Palmstrom C.J, Mayer J.W, Kramer E.J.  1985.  Ion beam analysis of diffusion in polymer melts. Electronic Packaging Materials Science. Materials Research Society Symposia Proceedings. :265-70.
Green P.F, Mills P.J, Palmstrom C.J, Mayer J.W, Kramer E.J.  1984.  LIMITS OF REPTATION IN POLYMER MELTS. Physical Review Letters. 53:2145-2148.
Gilbert-Corder S.N., Kawasaki J.K., Palmstrøm C.J, Krzyzanowska H.T., Tolk N.H..  2015.  Effects of nanoscale embedded Schottky barriers on carrier dynamics in ErAs:GaAs composite systems. Physical Review B. 92,134303
Gazibegovic S., Car D., Zhang H., Balk S.C., Logan J.A., de Moor M.W.A., Cassidy M.C., Schmits R., Xu D., Wang G.Z. et al..  2017.  Epitaxy of advanced nanowire quantum devices. Nature. 548, 434
Garrison K.C, Palmstrom C.J, Bartynski R.A.  1989.  Growth and characterization of single crystal epitaxial CoGa on MBE grown III-V semiconductors. Advances in Materials, Processing and Devices in III-V Compound Semiconductors Symposium. :613-18.
Garlid E.S, Hu Q.O, Geppert C., Chan M.K, Palmstrom C.J, Crowell P.A.  2011.  Electrical measurement of the spin Hall effects in Fe/In xGa 1-xAs heterostructures. 2011 69th Annual Device Research Conference (DRC). :155-8.
Garlid E.S, Hu Q.O, Chan M.K, Palmstrom C.J, Crowell P.A.  2010.  Electrical Measurement of the Direct Spin Hall Effect in Fe/InxGa1-xAs Heterostructures. Physical Review Letters. 105
F
Furis M., Smith D.L, Kos S., Garlid E.S, Reddy K.SM, Palmstrom C.J, Crowell P.A, Crooker S.A.  2007.  Local Hanle-effect studies of spin drift and diffusion in n : GaAs epilayers and spin-transport devices. New Journal of Physics. 9
Fowler D.E, Gyulai J., Palmstrom C..  1983.  ELECTRON INELASTIC MEAN FREE-PATH (IMFP) IN SINGLE-CRYSTAL BEO BY RUTHERFORD BACKSCATTERING (RBS) AND AUGER-ELECTRON SPECTROSCOPY (AES). Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films. 1:1021-1025.
Fitzsimmons M.R, Kirby B.J, Hengartner N.W, Trouw F., Erickson M.J, Flexner S.D, Kondo T., Adelmann C., Palmstrom C.J, Crowell P.A et al..  2007.  Suppression of nuclear polarization near the surface of optically pumped GaAs. Physical Review B. 76
Finstad T.G, Palmstrom C.J, Mounier S., Keramidas V.G, Zhu J.G, Carter C.B.  1991.  Initial stages of GaAs growth on Sc 1-xEr xAs surfaces. Evolution of Thin-Film and Surface Microstructure Symposium. :413-18.
Feigl L., Schultz B.D., Ohya S., Ouellette D.G., Kozhanov A., Palmstrøm C.J..  2013.  Structural and transport properties of epitaxial PrNiO3 thin films grown by molecular beam epitaxy. Journal of Crystal Growth. 366:51-54.
Farrell H.H, LaViolette R.A, Schultz B.D, Ludge K., Palmstrom C.J.  2003.  Self-assembled CoAs nanostructures. Journal of Vacuum Science & Technology B. 21:1760-1764.
Farrell H.H, Hilton J.L, Schultz B.D, Palmstrom C.J.  2006.  Nonequilibrium phases in epitaxial Mn/GaAs interfacial reactions. Journal of Vacuum Science & Technology B. 24:2018-2023.
Farrell H.H, Schultz B.D, Palmstrom C.J.  2009.  Comment on "High-resolution core-level photoemission study on GaAs(111)B surfaces" J. Appl. Phys. 101, 043516 (2007). Journal of Applied Physics. 105
Farrell H.H, Palmstrom C.J.  1990.  REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION CHARACTERISTIC ABSENCES IN GAAS(100) (2X4)-AS - A TOOL FOR DETERMINING THE SURFACE STOICHIOMETRY. Journal of Vacuum Science & Technology B. 8:903-907.
Farrell H.H, Lu J., Schultz B.D, Denison A.B, Palmstrom C.J.  2001.  GaAs(111)B(root 19X root 19)R23.4 degrees surface reconstruction. Journal of Vacuum Science & Technology B. 19:1597-1605.

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