Publications
NEW DIRECTIONS FOR III-V STRUCTURES - METAL-SEMICONDUCTOR HETEROEPITAXY. Institute of Physics Conference Series. :1-8.
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1992. New directions for III-V structures: metal/semiconductor heteroepitaxy. Gallium Arsenide and Related Compounds 1991. Proceedings of the Eighteenth International Symposium. :1-8.
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1992. Initial stages of GaAs growth on Sc 1-xEr xAs surfaces. Evolution of Thin-Film and Surface Microstructure Symposium. :413-18.
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1991. A template approach to metal/III-V semiconductor epitaxy. Heteroepitaxy of Dissimilar Materials Symposium. :271-82.
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1991. EPITAXIAL METAL-III-V SEMICONDUCTOR DOUBLE HETEROSTRUCTURE SCHOTTKY DIODES - CHARACTERIZATION AND NOVEL DEVICE POTENTIAL. Journal of Electronic Materials. 19:40-40.
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1990. Growth of buried metal aluminides and gallides and of rare-earth monopnictides in compound semiconductors: a comparison. Proceedings of the SPIE - The International Society for Optical Engineering. 1285:85-94.
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1990. INTERFACE CRYSTALLOGRAPHY AND STABILITY IN EPITAXIAL METAL (NIAL, COAL)/III-V SEMICONDUCTOR HETEROSTRUCTURES. Materials Science and Engineering B-Solid State Materials for Advanced Technology. 6:147-157.
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1990. Stable and epitaxial metal/III-V semiconductor heterostructures. Material Science Reports. 5:99-170.
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1990. STRUCTURAL AND ELECTRICAL-PROPERTIES OF INSITU FABRICATED EPITAXIAL THERMODYNAMICALLY STABLE SEMIMETALLIC COMPOUNDS ON MBE-GROWN GAAS. Journal of Electronic Materials. 19:39-40.
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1990. EPITAXIAL-GROWTH OF GAAS/NIAL/GAAS HETEROSTRUCTURES. Applied Physics Letters. 52:1216-1218.
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1988. STRUCTURE AND STABILITY OF ULTRATHIN NIAL FILMS IN (AL,GA)AS/NIAL/(AL,GA)AS HETEROSTRUCTURES. Journal of Electronic Materials. 17:S23-S23.
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1988.