Publications
CHARACTERIZATION OF THE COGA/GAAS INTERFACE. Applied Physics Letters. 55:39-41.
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1989. EPITAXIAL COGA AND TEXTURED COAS CONTACTS ON GA1-XALXAS FABRICATED BY MOLECULAR-BEAM EPITAXY. Journal of Applied Physics. 65:4753-4758.
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1989. ERAS EPITAXIAL LAYERS BURIED IN GAAS - MAGNETOTRANSPORT AND SPIN-DISORDER SCATTERING. Physical Review Letters. 62:2309-2312.
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1989. Fabrication and electrical properties of MBE grown metal-gallium and metal-arsenic compounds on Ga 1-xAl xAs. Advances in Materials, Processing and Devices in III-V Compound Semiconductors Symposium. :583-8.
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1989. Growth and characterization of single crystal epitaxial CoGa on MBE grown III-V semiconductors. Advances in Materials, Processing and Devices in III-V Compound Semiconductors Symposium. :613-18.
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1989. GROWTH OF EPITAXIAL RARE-EARTH ARSENIDE (100)GAAS AND GAAS RARE-EARTH ARSENIDE (100)GAAS STRUCTURES. Journal of Vacuum Science & Technology B. 7:747-752.
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1989. MISFIT DISLOCATIONS AT THE COGA/GAAS INTERFACE. Institute of Physics Conference Series. :659-664.
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1989. Misfit dislocations at the CoGa/GaAs interface. Microscopy of Semiconducting Materials 1989. Proceedings of the Royal Microscopical Society Conference. :659-64.
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1989. MAGNETOTRANSPORT IN ULTRATHIN ERAS EPITAXIAL LAYERS BURIED IN GAAS. Surface Science. 228:13-15.
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1990.