Publications

Found 220 results
Author Title [ Type(Asc)] Year
Filters: Author is Palmstrom, C. J.  [Clear All Filters]
Journal Article
Isakovic A.F, Berezovsky J., Crowell P.A, Chen L.C, Carr D.M, Schultz B.D, Palmstrom C.J.  2001.  Control of magnetic anisotropy in Fe1-xCox films on vicinal GaAs and Sc1-yEryAs surfaces. Journal of Applied Physics. 89:6674-6676.
Palmstrom C.J, Morgan D.V, Howes M.J.  1977.  CONTACT-DEGRADATION STUDIES ON GAAS TRANSFERRED-ELECTRON DEVICES USING A FOCUSED BACKSCATTERING TECHNIQUE. Electronics Letters. 13:504-505.
Palmstrom C.J, Morgan D.V, Howes M.J.  1978.  CONTACT DEGRADATION OF GAAS TRANSFERRED ELECTRON DEVICES. Nuclear Instruments & Methods. 150:305-311.
Mills P.J, Palmstrom C.J, Kramer E.J.  1986.  CONCENTRATION PROFILES OF NON-FICKIAN DIFFUSANTS IN GLASSY-POLYMERS BY RUTHERFORD BACKSCATTERING SPECTROMETRY. Journal of Materials Science. 21:1479-1486.
Farrell H.H, Schultz B.D, Palmstrom C.J.  2009.  Comment on "High-resolution core-level photoemission study on GaAs(111)B surfaces" J. Appl. Phys. 101, 043516 (2007). Journal of Applied Physics. 105
Palmstrom C.J, Chang C.C, Yu A., Galvin G.J, Mayer J.W.  1987.  CO/GAAS INTERFACIAL REACTIONS. Journal of Applied Physics. 62:3755-3762.
Palmstrom C.J, Chase E.W, Harbison J.P, Chang C.C, Kaplan A.S, Hwang D.M.  1987.  CO CONTACTS TO GAAS AND GA1-XALXAS - REACTIONS AND ELECTRICAL-PROPERTIES. Journal of the Electrochemical Society. 134:C116-C117.
Zhu J.G, Carter C.B, Palmstrom C.J, Garrison K.C.  1989.  CHARACTERIZATION OF THE COGA/GAAS INTERFACE. Applied Physics Letters. 55:39-41.
Crooker S.A, Garlid E.S, Chantis A.N, Smith D.L, Reddy K.SM, Hu Q.O, Kondo T., Palmstrom C.J, Crowell P.A.  2009.  Bias-controlled sensitivity of ferromagnet/semiconductor electrical spin detectors. Physical Review B. 80
Allen S.J, Derosa F., Palmstrom C.J, Zrenner A..  1991.  BAND-STRUCTURE, QUANTUM CONFINEMENT, AND EXCHANGE SPLITTING IN SC1-XERXAS EPITAXIAL LAYERS BURIED IN GAAS. Physical Review B. 43:9599-9609.
Schwarz S.A, Palmstrom C.J, Bhat R., Koza M., Wang L.C, Park M.H.  1995.  Backside SIMS study of Ge/Pd non-alloyed ohmic contacts on InGaAs. Beam-Solid Interactions for Materials Synthesis and Characterization. Symposium. :471-6.
Schwarz S.A, Palmstrom C.J, Schwartz C.L, Sands T., Shantharama L.G, Harbison J.P, Florez L.T, Marshall E.D, Han C.C, Lau S.S et al..  1990.  BACKSIDE SECONDARY ION MASS-SPECTROMETRY INVESTIGATION OF OHMIC AND SCHOTTKY CONTACTS ON GAAS. Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films. 8:2079-2083.
Wuyts K., Watte J., Silverans R.E, Vanhove M., Borghs G., Palmstrom C.J, Florez L.T, Munder H..  1994.  BACK SIDE RAMAN MEASUREMENTS ON GE/PD/N-GAAS OHMIC CONTACT STRUCTURES. Applied Physics Letters. 64:2406-2408.
Lund M.S, Dong J.W, Lu J., Dong X.Y, Palmstrom C.J, Leighton C..  2002.  Anomalous magnetotransport properties of epitaxial full Heusler alloys. Applied Physics Letters. 80:4798-4800.
Jeong H.K, Komesu T., Dowben P.A, Schultz B.D, Palmstrom C.J.  2002.  The anomalous effective surface Debye temperature of ErAs (100). Physics Letters A. 302:217-223.
Mills P.J, Green P.F, Palmstrom C.J, Mayer J.W, Kramer E.J.  1984.  ANALYSIS OF DIFFUSION IN POLYMERS BY FORWARD RECOIL SPECTROMETRY. Applied Physics Letters. 45:957-959.
Olowolafe J.O, Palmstrom C.J, Colgan E.G, Mayer J.W.  1985.  AL/TIW REACTION-KINETICS - INFLUENCE OF CU AND INTERFACE OXIDES. Journal of Applied Physics. 58:3440-3443.
Eizenberg M., Tu K.N, Palmstrom C.J, Mayer J.W.  1984.  2-STEP AL/TI METALLIZATION TO PTSI/SI STRUCTURES. Applied Physics Letters. 45:905-907.
Book
Palmstrom C.J, Morgan D.V.  1985.  Metallizations for GaAs devices and circuits. Gallium arsenide materials, devices, and circuits. :195-261.

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