Publications

Found 201 results
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Journal Article
Schwarz S.A, Mei P., Hwang D.M, Schwartz C.L, Venkatesan T., Palmstrom C.J, Stoffel N.G, Bhat R..  1989.  Studies of In 0.53Ga 0.47As/InP superlattice mixing and conversion. Advances in Materials, Processing and Devices in III-V Compound Semiconductors Symposium. :233-8.
Schwarz S.A, Mei P., Hwang D.M, Schwartz C.L, Venkatesan T., Palmstrom C.J, Stoffel N.G, Bhat R..  1989.  Studies of In 0.53Ga 0.47As/InP superlattice mixing and conversion. Advances in Materials, Processing and Devices in III-V Compound Semiconductors Symposium. :233-8.
Schwarz S.A, Mei P., Hwang D.M, Schwartz C.L, Venkatesan T., Palmstrom C.J, Stoffel N.G, Bhat R..  1989.  Studies of In 0.53Ga 0.47As/InP superlattice mixing and conversion. Advances in Materials, Processing and Devices in III-V Compound Semiconductors Symposium. :233-8.
Shojaei B., McFadden A., Shabani J., Schultz B.D, Palmstrøm C.J.  2015.  Studies of scattering mechanisms in gate tunable InAs/(Al,Ga)Sb two dimensional electron gases. Appl. Phys. Lett.. 106, 222101
Shojaei B., McFadden A., Shabani J., Schultz B.D, Palmstrøm C.J.  2015.  Studies of scattering mechanisms in gate tunable InAs/(Al,Ga)Sb two dimensional electron gases. Appl. Phys. Lett.. 106, 222101
Shojaei B., McFadden A., Shabani J., Schultz B.D, Palmstrøm C.J.  2015.  Studies of scattering mechanisms in gate tunable InAs/(Al,Ga)Sb two dimensional electron gases. Appl. Phys. Lett.. 106, 222101
Patel SJ, Kawasaki JK, Logan J, Schultz BD, Adell J., Thiagarajan B., Mikkelsen A., Palmstrøm CJ.  2014.  Surface and electronic structure of epitaxial PtLuSb (001) thin films. Applied Physics Letters. 104:-.
Patel S.J., Logan J.A., Harrington S.D., Schultz B.D, Palmstrøm C.J.  2016.  Surface reconstructions and transport of epitaxial PtLuSb(001) thin films grown by MBE. J Cryst Growth. 436, 145
Kawasaki JK, Schultz BD, Lu H, Gossard AC, Palmstrøm CJ.  2013.  Surface-Mediated Tunable Self-Assembly of Single Crystal Semimetallic ErSb/GaSb Nanocomposite Structures. Nano Letters. 13(6)
Rodwell M., Wistey M., Singisetti U., Burek G., Gossard A., Stemmer S., Engel-Herbert R., Hwang Y., Zheng Y., Van de Walle C. et al..  2008.  Technology development & design for 22 nm InGaAs/InP-channel MOSFETs. 2008 IEEE 20th International Conference on Indium Phosphide & Related Materials (IPRM). :6pp.-6pp..
Rodwell M., Wistey M., Singisetti U., Burek G., Gossard A., Stemmer S., Engel-Herbert R., Hwang Y., Zheng Y., Van de Walle C. et al..  2008.  Technology development & design for 22 nm InGaAs/InP-channel MOSFETs. 2008 IEEE 20th International Conference on Indium Phosphide & Related Materials (IPRM). :6pp.-6pp..
Rodwell M., Wistey M., Singisetti U., Burek G., Gossard A., Stemmer S., Engel-Herbert R., Hwang Y., Zheng Y., Van de Walle C. et al..  2008.  Technology development & design for 22 nm InGaAs/InP-channel MOSFETs. 2008 IEEE 20th International Conference on Indium Phosphide & Related Materials (IPRM). :6pp.-6pp..
Rodwell M., Wistey M., Singisetti U., Burek G., Gossard A., Stemmer S., Engel-Herbert R., Hwang Y., Zheng Y., Van de Walle C. et al..  2008.  Technology development & design for 22 nm InGaAs/InP-channel MOSFETs. 2008 IEEE 20th International Conference on Indium Phosphide & Related Materials (IPRM). :6pp.-6pp..
Sands T., Harbison J.P, Palmstrom C.J, Ramesh R., Keramidas V.G.  1991.  A template approach to metal/III-V semiconductor epitaxy. Heteroepitaxy of Dissimilar Materials Symposium. :271-82.
Clinger LE, Pernot G, Buehl TE, Burke PG, Gossard AC, Palmstrom CJ, Shakouri A, Zide JMO.  2012.  Thermoelectric properties of epitaxial TbAs:InGaAs nanocomposites. Journal of Applied Physics. 111
Koltun R, Hall JL, Mates TE, Bowers JE, Schultz BD, Palmstrom CJ.  2013.  Thermoelectric properties of single crystal Sc[sub 1 - x]Er[sub x]As:InGaAs nanocomposites. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 31:041401.
Kjaergaard M., Suominen H.J., Nowak M.P., Akhmerov A.R., Shabani J., Palmstrøm C.J., Nichele F., Marcus C.M..  2017.  Transparent Semiconductor-Superconductor Interface and Induced Gap in an Epitaxial Heterostructure Josephson Junction. Physical Review Applied. 7, 034029
Kjaergaard M., Suominen H.J., Nowak M.P., Akhmerov A.R., Shabani J., Palmstrøm C.J., Nichele F., Marcus C.M..  2017.  Transparent Semiconductor-Superconductor Interface and Induced Gap in an Epitaxial Heterostructure Josephson Junction. Physical Review Applied. 7, 034029
Shabani J., Kjaergaard M., Suominen H.J., Kim Y., Nichele F., Pakrouski K., Stankevic T., Lutchyn R.M., Krogstrup P., Feidenhans R. et al..  2016.  Two-dimensional epitaxial superconductor-semiconductor heterostructures: A platform for topological superconducting networks. Phys Rev B . 93, 155402
Shabani J., Kjaergaard M., Suominen H.J., Kim Y., Nichele F., Pakrouski K., Stankevic T., Lutchyn R.M., Krogstrup P., Feidenhans R. et al..  2016.  Two-dimensional epitaxial superconductor-semiconductor heterostructures: A platform for topological superconducting networks. Phys Rev B . 93, 155402
Shabani J., Kjaergaard M., Suominen H.J., Kim Y., Nichele F., Pakrouski K., Stankevic T., Lutchyn R.M., Krogstrup P., Feidenhans R. et al..  2016.  Two-dimensional epitaxial superconductor-semiconductor heterostructures: A platform for topological superconducting networks. Phys Rev B . 93, 155402
Song J.I, Hong B.WP, Palmstrom C.J, Vandergaag B.P, Chough K.B.  1994.  ULTRA-HIGH-SPEED INP/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS. Ieee Electron Device Letters. 15:94-96.
Iyer P.P, Pendharkar M., Palmstrøm C.J., Schuller J.A..  2017.  Ultrawide thermal free-carrier tuning of dielectric antennas coupled to epsilon-near-zero substrates. Nature Communications. 8
Harrington S.D., Sharan A., Rice A.D., Logan J.A., McFadden A.P., Pendharkar M., Pennachio D.J., Wilson N.S., Gui Z., Janotti A. et al..  2017.  Valence-band offsets of CoTiSb/In0.53Ga0.47As and CoTiSb/In0.52Al0.48As heterojunctions. Appl. Phys. Lett.. 111, 061605
Suominen H.J., Kjaergaard M., Hamilton A.R., Shabani J., Palmstrøm C.J., Marcus C.M., Nichele F..  2017.  Zero-energy modes from coalescing Andreev states in a two-dimensional semiconductor-superconductor hybrid platform. Physical Review Letters. 119, 176805

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