Found 293 results
Author [ Title(Asc)] Type Year
A B C D E F G H I J K L M N O P Q R S T U V W X Y Z 
Crooker S.A, Smith D.L, Palmstrom C.J, Crowell P.A.  2008.  Imaging spin injection and spin transport in semiconductors. 2008 Quantum Electronics and Laser Science Conference (QELS). :1pp.-1pp..
Rodwell M.JW, Singisetti U., Wistey M., Burek G.J, Carter A., Baraskar A., Law J., Thibeault B.J, Ji KEun, Shin B. et al..  2010.  III-V MOSFETs: scaling laws, scaling limits, fabrication processes. 2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM 2010). :6pp.-6pp..
Miceli P.F, Palmstrom C.J, Moyers K.W.  1992.  GROWTH-MORPHOLOGY OF EPITAXIAL ERAS/GAAS BY X-RAY EXTENDED RANGE SPECULAR REFLECTIVITY. Applied Physics Letters. 61:2060-2062.
Hilton J.L, Schultz B.D, Palmstrom C.J.  2007.  Growth temperature dependence of Mn/GaAs surfaces and interfaces. Journal of Applied Physics. 102
Dong X.Y, Dong J.W, Xie J.Q, Shih T.C, McKernan S., Leighton C., Palmstrom C.J.  2003.  Growth temperature controlled magnetism in molecular beam epitaxially grown Ni2MnAl Heusler alloy. Journal of Crystal Growth. 254:384-389.
Logan J.A., Brown-Heft T.L., Harrington S.D., Wilson N.S., McFadden A.P., Rice A.D., Pendharkar M., Palmstrøm C.J..  2017.  Growth, structural, and magnetic properties of single-crystal full-Heusler Co2TiGe thin films. Journal of Applied Physics. 121
Palmstrom C.J, Vandergaag B.P, Song J.I, Hong W.P, Schwarz S.A, Novak S..  1994.  GROWTH OF HEAVY CARBON-DOPED GALNAS LATTICE-MATCHED TO INP BY CHEMICAL BEAM EPITAXY. Applied Physics Letters. 64:3139-3141.
Czanderna K.K, Morrissey K.J, Palmstrom C.J, Carter C.B, Merrill R.P.  1989.  GROWTH OF GAMMA-ALUMINA ON CRYSTALLOGRAPHICALLY DISTINCT ALUMINUM SUBSTRATES. Journal of Materials Science. 24:515-522.
Zhu J.G, Palmstrom C.J, Carter C.B.  1991.  THE GROWTH OF GAAS ON SC0.3ER0.7AS EPILAYERS. Institute of Physics Conference Series. :419-422.
Palmstrom C.J, Garrison K.C, Mounier S., Sands T., Schwartz C.L, Tabatabaie N., Allen S.J, Gilchrist H.L, Miceli P.F.  1989.  GROWTH OF EPITAXIAL RARE-EARTH ARSENIDE (100)GAAS AND GAAS RARE-EARTH ARSENIDE (100)GAAS STRUCTURES. Journal of Vacuum Science & Technology B. 7:747-752.
Buschbeck J., Kawasaki J.K, Buehl T.E, Gossard A.C, Palmstrom C.J.  2011.  Growth of epitaxial NiTi shape memory alloy films on GaAs(001) and evidence of martensitic transformation. Journal of Vacuum Science & Technology B. 29
Buehl TE, LeBeau JM, Stemmer S, Scarpulla MA, Palmstrom CJ, Gossard AC.  2010.  Growth of embedded ErAs nanorods on (411)A and (411)B GaAs by molecular beam epitaxy. Journal of Crystal Growth. 312:2089-2092.
Palmstrom C.J, Sands T., Harbison J.P, Finstad T.G, Mounier S., Florez L.T, Keramidas V.G, Zhu J.G, Carter C.B.  1990.  Growth of buried metal aluminides and gallides and of rare-earth monopnictides in compound semiconductors: a comparison. Proceedings of the SPIE - The International Society for Optical Engineering. 1285:85-94.
Xie J.Q, Dong J.W, Osinsky A., Chow P.P, Heo Y.W, Norton D.P, Pearton S.J, Dong X.Y, Adelmann C., Palmstrom C.J.  2006.  Growth of a-plane ZnO thin films on r-plane sapphire by plasma-assisted MBE. Progress in Semiconductor Materials V-Novel Materials and Electronic and Optoelectronic Applications (Materials Research Society Symposium Proceedings Vol.891). :407-12.
Harrington S.D., Rice A.D., Brown-Heft T.L., Bonef B., Sharan A., McFadden A.P, Logan J.A., Pendharkar M., Feldman M.M., Mercan O. et al..  2018.  Growth, electrical, structural, and magnetic properties of half-Heusler CoTi1−x Fex Sb. Phys Rev Materials. 2
Kawasaki JK, Johansson LIM, Schultz BD, Palmstrøm CJ.  2014.  Growth and transport properties of epitaxial lattice matched half Heusler CoTiSb/InAlAs/InP(001) heterostructures. Applied Physics Letters. 104
Cassels LE, Buehl TE, Burke PG, Palmstrom CJ, Gossard AC, Pernot G, Shakouri A, Haughn CR, Doty MF, Zide JMO.  2011.  Growth and characterization of TbAs:GaAs nanocomposites. Journal of Vacuum Science & Technology B. 29
Garrison K.C, Palmstrom C.J, Bartynski R.A.  1989.  Growth and characterization of single crystal epitaxial CoGa on MBE grown III-V semiconductors. Advances in Materials, Processing and Devices in III-V Compound Semiconductors Symposium. :613-18.