Publications

Found 293 results
Author [ Title(Desc)] Type Year
A B C D E F G H I J K L M N O P Q R S T U V W X Y Z 
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Zhu J.G, Carter C.B, Palmstrom C.J, Mounier S..  1990.  MICROSTRUCTURE OF EPITACTICALLY GROWN GAAS/ERAS/GAAS. Applied Physics Letters. 56:1323-1325.
Song J.I, Hong W.P, Palmstrom C.J, Hayes J.R, Chough K.B, Vandergaag B.P.  1993.  MICROWAVE CHARACTERISTICS OF A CARBON-DOPED BASE INP/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTOR GROWN BY CHEMICAL BEAM EPITAXY. Electronics Letters. 29:1893-1894.
Song J.I, Hong W.P, Palmstrom C.J, Vandergaag B.P, Chough K.B.  1994.  MILLIMETER-WAVE INP/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH A SUBPICOSECOND EXTRINSIC DELAY-TIME. Electronics Letters. 30:456-457.
Zhu J.G, Palmstrom C.J, Carter C.B.  1995.  MISFIT DISLOCATIONS AT ERAS/GAAS HETEROJUNCTIONS. Acta Metallurgica Et Materialia. 43:4171-4177.
Zhu J.G, Palmstrom C.J, Garrison K.C, Carter C.B.  1989.  MISFIT DISLOCATIONS AT THE COGA/GAAS INTERFACE. Institute of Physics Conference Series. :659-664.
Zhu J.G, Palmstrom C.J, Garrison K.C, Carter C.B.  1989.  Misfit dislocations at the CoGa/GaAs interface. Microscopy of Semiconducting Materials 1989. Proceedings of the Royal Microscopical Society Conference. :659-64.
Dong J.W, Chen L.C, Palmstrom C.J, James R.D, McKernan S..  1999.  Molecular beam epitaxy growth of ferromagnetic single crystal (001) Ni2MnGa on (001) GaAs. Applied Physics Letters. 75:1443-1445.
Palmstrom C.J, Choi S.G, Schultz B.D, Wang Y.Q.  2007.  Molecular beam epitaxy of Sc xEr 1-xSb on InAs(100). Journal of Crystal Growth. 303:433-7.
Choi S.G, Schultz B.D, Wang Y.Q, Palmstrom C.J.  2007.  Molecular beam epitaxy of ScxEr1-xSb on InAs(100). Journal of Crystal Growth. 303:433-437.
Lu J., Dong J.W, Xie J.Q, McKernan S., Palmstrom C.J, Xin Y..  2003.  Molecular-beam-epitaxy growth of ferromagnetic Ni2MnGe on GaAs(001). Applied Physics Letters. 83:2393-2395.
Luo Y.S, Yang Y.N, Weaver J.H, Florez L.T, Palmstrom C.J.  1994.  MULTIORIENTATIONAL GROWTH OF AL ON GAAS(001) STUDIED WITH SCANNING-TUNNELING-MICROSCOPY. Physical Review B. 49:1893-1899.
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Harbison J.P, Sands T., Palmstrom C.J, Cheeks T.L, Florez L.T, Keramidas V.G.  1992.  NEW DIRECTIONS FOR III-V STRUCTURES - METAL-SEMICONDUCTOR HETEROEPITAXY. Institute of Physics Conference Series. :1-8.
Harbison J.P, Sands T., Palmstrom C.J, Cheeks T.L, Florez L.T, Keramidas V.G.  1992.  New directions for III-V structures: metal/semiconductor heteroepitaxy. Gallium Arsenide and Related Compounds 1991. Proceedings of the Eighteenth International Symposium. :1-8.
Moon-Ho P, Wang L.C, Fei D, Clawson A., Lau S.S, Cheng J.Y, Hwang D.M, Palmstrom C.J.  1995.  Non-Au based shallow low resistance ohmic contacts on p-InP. Conference Proceedings. Seventh International Conference on Indium Phosphide and Related Materials (Cat. No.95CH35720). :672-3.
Farrell H.H, Hilton J.L, Schultz B.D, Palmstrom C.J.  2006.  Nonequilibrium phases in epitaxial Mn/GaAs interfacial reactions. Journal of Vacuum Science & Technology B. 24:2018-2023.
Han C.C, Wang X.Z, Wang L.C, Marshall E.D, Lau S.S, Schwarz S.A, Palmstrom C.J, Harbison J.P, Florez L.T, Potemski R.M et al..  1990.  NONSPIKING OHMIC CONTACT TO P-GAAS BY SOLID-PHASE REGROWTH. Journal of Applied Physics. 68:5714-5718.
Allen S.J, Brehmer D., Palmstrom C.J.  1993.  Novel electronics enabled by rare earth arsenides buried in III-V semiconductors. Rare Earth Doped Semiconductors Symposium. :307-17.
Strand J., Isakovic A.F, Lou X., Crowell P.A, Schultz B.D, Palmstrom C.J.  2003.  Nuclear magnetic resonance in a ferromagnet-semiconductor heterostructure. Applied Physics Letters. 83:3335-3337.
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Logan J.A., Patel S.J., Harrington S.D., Polley C.M., Schultz B.D., Balasubramanian T., Janotti A., Mikkelsen A., Palmstrøm C.J..  2016.  Observation of a topologically non-trivial surface state in half-Heusler PtLuSb (001) thin films. Nature Communications. 7, 11993
Marshall E.D, Lau S.S, Palmstrom C.J, Sands T., Schwartz C.L, Schwarz S.A, Harbison J.P, Florez L.T.  1989.  Ohmic contact formation mechanism in the Ge/Pd/n-GaAs system. Chemistry and defects in semiconductor heterostructures Symposium. :163-8.
Crooker S.A, Furis M., Lou X., Crowell P.A, Smith D.L, Adelmann C., Palmstrom C.J.  2007.  Optical and electrical spin injection and spin transport in hybrid Fe/GaAs devices. Journal of Applied Physics. 101
Choi S.G, Dattelbaum A.M, Picraux S.T, Srivastava S.K, Palmstrom C.J.  2008.  Optical properties and critical-point energies of BaTiO3 (001) from 1.5 to 5.2 eV. Journal of Vacuum Science & Technology B. 26:1718-1722.
Choi S.G, Srivastava S.K, Palmstrom C.J.  2005.  Optical properties of AlGaSb alloys grown by MBE. AIP Conference Proceedings. :125-6.
Choi S.G, Srivastava S.K, Palmstrom C.J, Kim Y.D, Cooper S.L, Aspnes D.E.  2005.  Optical properties of (GaSb)(3n)(AlSb)(n) (1 <= n <= 5) superlattices. Journal of Vacuum Science & Technology B. 23:1149-1153.
Isakovic A.F, Carr D.M, Strand J., Schultz B.D, Palmstrom C.J, Crowell P.A.  2001.  Optical pumping in ferromagnet-semiconductor heterostructures: Magneto-optics and spin transport. Physical Review B. 64

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