Publications
BACKSIDE SECONDARY ION MASS-SPECTROMETRY INVESTIGATION OF OHMIC AND SCHOTTKY CONTACTS ON GAAS. Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films. 8:2079-2083.
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1990. GE REDISTRIBUTION IN SOLID-PHASE GE/PD/GAAS OHMIC CONTACT FORMATION. Journal of Applied Physics. 67:334-339.
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1990. NONSPIKING OHMIC CONTACT TO P-GAAS BY SOLID-PHASE REGROWTH. Journal of Applied Physics. 68:5714-5718.
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1990. Ohmic contact formation mechanism in the Ge/Pd/n-GaAs system. Chemistry and defects in semiconductor heterostructures Symposium. :163-8.
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1989. A high depth resolution backside secondary ion mass spectrometry technique used for studying metal/GaAs contacts. Advanced Surface Processes for Optoelectronics: Symposium. :283-8.
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1988.