Publications

Found 21 results
Author Title Type [ Year(Asc)]
Filters: Author is Carter, C. B.  [Clear All Filters]
1998
Caldwell D.A, Chen L.C, Bensaoula A.H, Farrer J.K, Carter C.B, Palmstrom C.J.  1998.  In situ controlled reactions and phase formation of thin films on GaAs. Journal of Vacuum Science & Technology B. 16:2280-2285.
Caldwell D.A, Chen L.C, Bensaoula A.H, Farrer J.K, Carter C.B, Palmstrom C.J.  1998.  In-situ regrowth of GaAs through controlled phase transformations and reactions of thin films on GaAs. Advanced Interconnects and Contact Materials and Processes for Future Integrated Circuits. Symposium. :455-60.
1991
Zhu J.G, Palmstrom C.J, Carter C.B.  1991.  THE GROWTH OF GAAS ON SC0.3ER0.7AS EPILAYERS. Institute of Physics Conference Series. :419-422.
Finstad T.G, Palmstrom C.J, Mounier S., Keramidas V.G, Zhu J.G, Carter C.B.  1991.  Initial stages of GaAs growth on Sc 1-xEr xAs surfaces. Evolution of Thin-Film and Surface Microstructure Symposium. :413-18.
1990
Palmstrom C.J, Sands T., Harbison J.P, Finstad T.G, Mounier S., Florez L.T, Keramidas V.G, Zhu J.G, Carter C.B.  1990.  Growth of buried metal aluminides and gallides and of rare-earth monopnictides in compound semiconductors: a comparison. Proceedings of the SPIE - The International Society for Optical Engineering. 1285:85-94.
Zhu J.G, Carter C.B, Palmstrom C.J, Mounier S..  1990.  MICROSTRUCTURE OF EPITACTICALLY GROWN GAAS/ERAS/GAAS. Applied Physics Letters. 56:1323-1325.
Zhu J.G, Palmstrom C.J, Carter C.B.  1990.  Phase boundaries between GaAs and other cubic materials. EMAG-MICRO 89. Proceedings of the Institute of Physics Electron Microscopy and Analysis Group and Royal Microscopical Society Conference. :411-14vol.1.
Zhu J.G, Palmstrom C.J, Carter C.B.  1990.  PHASE BOUNDARIES BETWEEN GAAS AND OTHER CUBIC MATERIALS. Institute of Physics Conference Series. :411-414.
Palmstrom C.J, Cheeks T.L, Nahory R.E, Wilkens B.J, Martinez J.A, Miceli P.F, Keramidas V.G, Zhu J.G, Carter C.B.  1990.  STRUCTURAL AND ELECTRICAL-PROPERTIES OF INSITU FABRICATED EPITAXIAL THERMODYNAMICALLY STABLE SEMIMETALLIC COMPOUNDS ON MBE-GROWN GAAS. Journal of Electronic Materials. 19:39-40.
1989
Zhu J.G, Carter C.B, Palmstrom C.J, Garrison K.C.  1989.  CHARACTERIZATION OF THE COGA/GAAS INTERFACE. Applied Physics Letters. 55:39-41.
Czanderna K.K, Morrissey K.J, Palmstrom C.J, Carter C.B, Merrill R.P.  1989.  GROWTH OF GAMMA-ALUMINA ON CRYSTALLOGRAPHICALLY DISTINCT ALUMINUM SUBSTRATES. Journal of Materials Science. 24:515-522.
Zhu J.G, Palmstrom C.J, Garrison K.C, Carter C.B.  1989.  MISFIT DISLOCATIONS AT THE COGA/GAAS INTERFACE. Institute of Physics Conference Series. :659-664.
Zhu J.G, Palmstrom C.J, Garrison K.C, Carter C.B.  1989.  Misfit dislocations at the CoGa/GaAs interface. Microscopy of Semiconducting Materials 1989. Proceedings of the Royal Microscopical Society Conference. :659-64.
1986
Chen S.H, Carter C.B, Palmstrom C.J, Ohashi T..  1986.  Lateral reactions of GaAs with Ni studied by transmission electron microscopy. Thin Films - Interfaces and Phenomena. Part of the Fall 1985 Meeting of the Materials Research Society. :361-6.
Chen S.H, Carter C.B, Palmstrom C.J, Ohashi T..  1986.  TRANSMISSION ELECTRON-MICROSCOPY STUDIES ON LATERAL REACTION OF GAAS WITH NI. Applied Physics Letters. 48:803-805.
1984
Kavanagh K.L, Chen S.H, Palmstrom C.J, Carter C.B, Mukherjee S.D.  1984.  RBS and TEM analysis of Ta silicides on GaAs. Thin Films and Interfaces II. Proceedings of the Symposium. :143-8.